Si_（1－x）Ge_x／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数的基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ（ｘ＝０．０５）单模定向耦合器．在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦合效率达到９８．１％     

分子束外延的计算机控制

报导了一种专门为MBE生长而设计的计算机控制系统，改善并扩展了原控制单元SentinelⅢ的功能，并展示了由它控制生长的各种SiGe结构。     

离子溅射在GaP极性表面引起的损伤及其消除

离子束处理在器件工艺和材料表征技术中有着广泛的应用．本文采用低能电子衍射、Ｘ光电子能谱和角分辨紫外光电子能谱对ＧａＰ极性表面经Ａｒ离子溅射后的损伤情况进行了研究．主要探讨表面损伤及其消除、表面能带弯曲等问题．     

用ARUPS研究Al_x Ga_(1-x)As(100)表面态(英文)

The surface states of Al0.7Ga0.3As(100) were studied by angle resolved ultraviolet photoelectron spectroscopy. It is first found that there exist two surface states on Al0.7Ga0.3As(100) surface, which can be removed by the adsorption of 1500L hydrogen. The evolution of these two surface states with thermal annealing was investigated. These two surface states were well developed by the annealing at 450℃. The ARUP spectra were measured to study their energy dispersions in k space. These results are discussed and compared with those of the GaAs(100)c(4×2) surface.     

硫化物钝化GaAs表面的研究进展

叙述用硫钝化GaAs表面的研究动态,包括表面处理工艺,已取得的效果及表面钝化的机理,并指出今后的研究内容。     

Si局域分子束外延技术

利用局域分子束外延技术生长了含有SiGe量子阱的岛状结构。实现了生长的岛状结构侧面不与掩模材料相接触。这种含有量子阱的岛状结构具有比相同结构量子阱强20多倍的光致发光强度。     

Si(001)上MBE异质生长Ge中表面活化剂Sb的作用的研究

本文利用RHEED、X射线双晶衍射及TEM等技术，研究了在Si（001）衬底上，用晶化了的无定形Ge层做缓冲层MBE生长Ge时，引入表面活化剂Sb所产生的影响．研究表明，Sb的引入将会使Si（001）衬底上无定形Ge膜的晶化温度显著提高，并在一定的生长条件下，破坏Ge外延层的结晶性．     

高灵敏度的高分辨率电子能量损失谱计算机控制系统

对进口ADES-400型角分辨电子能谱仪的计算机控制录谱系统进行了改造,使谱仪增加了高分辨电子能量损失谱(HREELS)的计算机控制录谱功能,并且使HREELS谱的灵敏度提高了近两个数量级。     

SiGe／Si量子阱结构材料的激子发光谱

在用分子束外延生长的ＳｉＧｅ／Ｓｉ多量子阱结构中，观察到激子发光光谱，从无声子参与的或ＴＯ－声子参与的激子发光峰位能量，计算了量子阱中合金的组份，并与通过Ｘ－射线衍射谱得到的结果作了比较，发现在Ｇｅ的组份比较小时，利用激子发光峰位能量确定合金组份比利用Ｘ－射线衍射谱更为方便和精确．     

Al/GaP(■)界面形成的初始阶段(英文)

X-ray photoelectron spectroscopy(XPS), ultraviolet photoelectron spec-troscopy (UPS) and high resolution electron energy loss spectroscopy (HREELS)are used to s tudy aluminum deposition on the GaP(111) surface prepared by ioa sputtering followed by thermal annealing. Because of the very limited thickness of Al overlayer, only the initial stage of Al/GaP (111) interface formation is investigated. At this stage, a Ga/Al replce-ment reaction has already been induced, forming an AIP overlayer covered with segragated Ga atoms. The interband transition of 1.7eV found on the clean GaP(l11) surface is removed, Evidences on the changes of valence band structure are studied and discussed carefully.