退火损伤对Er注入GaAs和Yb注入InP发光的影响

本文报道了CaAs∶Er、InP∶Yb发光样品的二次离子质谱、X-射线双晶衍射测量结果及其与Er离子的表面成份的关系.分析讨论了退火损伤对GaAs∶Er和InP∶Yb发光的影响以及Er~(3+)复合体发光中心模型.     

Luminescence Characteristics of Yb~(3 ) and Er~(3 ) in Ⅲ-Ⅴ Semiconductors

The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at77K.The peaks at 1.0 and 1.5μm come from(4f)~2F_(5/2)→~2F_(7/2)of Yb~(3 )and ~4I_(13/2)→~4I_(15/2)of Er~(3 ),respectively.The optimum luminescent intensities can be obtained from Yb-implanted and Er-implanted sam-ples which were annealed at 800 and 750℃,respectively.A ccording to the analyses of PL and the rocking curveof X-ray double crystal diffraction,the best crystal structure of implanted InP layer has been obtained by an-nealing at 850℃.The interaction between Yb~(3 )and Er~(3 )in the SI-InP has been investigated for the first time.The quenching effect of Yb~(3 )and Er~(3 )with each other has been observed when the doses of Yb and Er-im-planted SI-InP are equal.     

Yb、Er双注入SI—InP发光中的浓度猝灭效应和光子雪崩现象研究

本文首次报道了Yb、Er双注入SI-Inp中Yb~(3+)1.04μm和Er~(3+)1.54μm发光行为,观察到了浓度相互猝灭效应和光子雪崩现象。