利用磁控溅射在GaN/蓝宝石衬底上生长ZnO薄膜

Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 ℃ for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 ℃. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 ℃ with best crystallization. oindent     

立方氮化硼薄膜制备与性质研究新进展

立方氮化硼(c-BN)具有优异的物理和化学性质, 在力学、光学和电子学等方面有着广泛的应用前景. 自上世纪80年代开始, 低压沉积c-BN薄膜的研究迅速发展, 到90年代中期达到高潮, 随后进展缓慢, c-BN薄膜研究转入低潮. 近年来, c-BN薄膜研究在几方面取得了突破, 如获得与衬底粘附良好、厚度超过1μm的c-BN厚膜; 成功实现了c-BN单晶薄膜的异质外延生长; 此外, 在c-BN薄膜力学性质和过渡层微结构研究方面也取得了进展. 本文主要评述最近几年c-BN薄膜研究在以上几方面取得的最新进展.     

离子注入法制备NiSi2层及其表面等离激元增强ZnO紫外发射的研究

通过对NiSi2的表面等离激元共振能量和ZnO/NiSi2的Purcell因子的计算,结果表明可以利用NiSi2与ZnO之间的表面等离激元耦合效应来增强ZnO的紫外发射。实验中,ZnO薄膜直接沉积在NiSi2层上,其中NiSi2层通过Ni离子注入的方法获得,并且其表面粗糙度可在3 nm到38 nm的大范围内调节,为研究表面等离激元增强ZnO紫外发射创造了有利的实验条件。在最粗糙的NiSi2层上制备的ZnO,其紫外发射获得了11倍的增强。本文的实验结果表明,NiSi2有望应用在电互联材料的同时,还可以用其来增强半导体的光发射。     

Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi_2 layer synthesized by ion implantation

The calculation results of the surface plasmon(SP) energy and Purcell factor of ZnO/NiSi_2 demonstrate the possibility of using NiSi_2 to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi_2 layers synthesized by ion implantation,and the roughness of the NiSi_2 layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi_2 layer was obtained...