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Mokerov V. G. Kuznetsov A. L. Fedorov Yu. V. Bugaev A. S. Pavlov A. Yu. Enyushkina E. N. Gnatyuk D. L. Zuev A. V. Galiev R. R. Ovcharenko E. N. Sveshnikov Yu. N. Tsatsulnikov A. F. Ustinov V. M. 《Semiconductors》2009,43(4):537-543
Semiconductors - The N-Al0.27Ga0.73N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L g (ranging from 170 nm to 0.5 μm) and gate widths W s (ranging from 100 to... 相似文献
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