Power Trench MOSFETs with very low specific on-resistance for 25V applications

In this paper, an investigation of the benefits of deep ultra violet lithography for the manufacturing of Trench MOSFETs and its impact on device performance is presented. We discuss experimental results for devices with a pitch size down to 0.6 μm fabricated with an unconventional implant topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are benchmarked against previously published TrenchMOS technologies by de-embedding the parasitic substrate resistance, revealing a record-low specific on-resistance of 5.3 mΩ mm² at a breakdown voltage of 30 V (V_gs = 10 V).     

Administration of desmopressin in brain-dead donors and renal function in kidney recipients

BACKGROUND: Diabetes insipidus is common among brain-dead donors and may lead to decreased graft function. The use of desmopressin to limit the consequences of diabetes insipidus is controversial. We assessed the effects of desmopressin administered to brain-dead donors on early and long-term graft function in kidney recipients. METHODS: In a randomised controlled study, 97 brain-dead donors received desmopressin as 1 microg bolus every 2 h when diuresis was more than 300 mL/h (desmopressin group n=49) or no desmopressin (control group n=48). In 175 kidney recipients (controls n=89, desmopressin group n=86) we measured serum concentrations of creatinine and haemodialysis requirements to assess early renal function in the first 15 days after transplantation. We assessed long-term results of transplantation (median time 45 months) for a homogeneous subgroup of 95 recipients (48 in the desmopressin group). FINDINGS: We found no significant differences between the two groups of brain-dead donors, except for final diuresis, which was lower in the desmopressin group than among controls. Haemodialysis requirement in controls and the desmopressin group (20 vs 23%, p=0.63) and serum creatinine concentrations (decrease from 903 micromol/L to 206 micromol/L vs 814 micromol/L to 193 micromol/L, p=0.14) did not differ significantly in the first 15 days after transplantation. Long-term graft survival was similar in the two groups (88 vs 87%). INTERPRETATION: Desmopressin can be given to brain-dead donors to limit the harmful effects of diabetes insipidus without any substantial effects to graft function in recipients.     

Fabrication of second-order gratings for 1.55 μm DFB lasersusing deep UV lithography

Second-order gratings for 1.55 μm DFB lasers have been fabricated on InP substrate using contact deep UV (220 nm) lithography. Localised gratings with a 0.48 μm pitch were clearly resolved in PMMA photoresist and then transferred in InP by wet chemical etching     

The influence of climatic conditions on the reliability of electronic components in telephone exchanges

This paper shows the significant influence of climatic conditions on the reliability of components in telephone exchanges. The great number of observations made enabled numerous data to be collected. Sophisticated data processing was used using data analysis methods, in particular factor analysis. Prominence was thus given to the various parameters affecting the reliability of components (temperature, hygrometry, location of the board, air conditioning process…). A physical analysis of the failure of components complemented the statistical study. It resulted in taking practical measures to improve the field reliability of French telecommunication equipment.     

Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated.     

Optimization of embedded compact nonvolatile memories for sub-100-nm CMOS generations

The performance of compact nonvolatile memory cells, meant for embedded applications in advanced CMOS processes, is studied and analyzed in detail by means of technology computer-aided design (TCAD), and new experimental results are presented. Improvement of the memory performance is achieved. The key element of this improvement is access gate oxide thickness reduction combined with suitable design of the channel/source/drain doping profiles. An increase of the memory readout current by a factor of two was achieved with an excellent low-leakage current level of the access gate transistor. The increase of the read current allows faster read access, while the excellent subthreshold behavior of the access gate transistor allows aggressive scaling of the access gate length down to 160 nm. A gate voltage as low as 1 V can be used for reading the cell, so there is no need for voltage boosting. The source-side injection programming speed is increased by one order of magnitude for devices with thin access gate oxide. The compact cell is suited for embedded applications in sub-100-nm CMOS generations.     

Second-order DFB lasers fabricated by deep UV contact lithography and GSMBE

DFB ridge waveguide lasers at 1.55 mu m with uniform second-order gratings defined by deep UV lithography have been realised for the first time. The lasers have been fabricated using gas source molecular beam epitaxial (GSMBE) heterostructures grown in a two-step process. The characteristics of the DFB lasers (28 mA minimum threshold current, single-mode behaviour at output power in excess of 5 mW for more than 80% of the lasers and very low dispersion (+or-0.6 nm) of the lasing wavelength) demonstrate that deep UV lithography can be successfully used for the fabrication of DFB lasers.<>