首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   674篇
  免费   11篇
  国内免费   3篇
电工技术   38篇
化学工业   98篇
金属工艺   18篇
机械仪表   13篇
建筑科学   8篇
能源动力   7篇
轻工业   54篇
水利工程   1篇
无线电   95篇
一般工业技术   94篇
冶金工业   227篇
原子能技术   4篇
自动化技术   31篇
  2021年   12篇
  2019年   2篇
  2018年   3篇
  2017年   7篇
  2016年   8篇
  2015年   5篇
  2014年   7篇
  2013年   15篇
  2012年   19篇
  2011年   17篇
  2010年   29篇
  2009年   16篇
  2008年   22篇
  2007年   23篇
  2006年   16篇
  2005年   25篇
  2004年   18篇
  2003年   14篇
  2002年   8篇
  2001年   13篇
  2000年   10篇
  1999年   14篇
  1998年   83篇
  1997年   61篇
  1996年   40篇
  1995年   24篇
  1994年   22篇
  1993年   17篇
  1992年   10篇
  1991年   12篇
  1990年   10篇
  1989年   13篇
  1988年   7篇
  1987年   6篇
  1986年   6篇
  1985年   11篇
  1984年   5篇
  1983年   9篇
  1982年   3篇
  1981年   6篇
  1980年   3篇
  1979年   4篇
  1978年   3篇
  1977年   5篇
  1976年   6篇
  1975年   2篇
  1974年   5篇
  1973年   2篇
  1971年   2篇
  1966年   2篇
排序方式: 共有688条查询结果,搜索用时 62 毫秒
1.
This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed  相似文献   
2.
3.
4.
A VHF omnidirectional radio range (VOR) is a navigation aid radio beacon facility, which provides aircraft with azimuth information relative to the VOR station in question as the origin. In Japan, two types of VOR-the conventional type (referred to as a CVOR) and the Doppler type (referred to as a DVOR)-are currently in use. An element known as the Alford loop antenna (ALA), which changes the loading reactance, is used for the VOR because the horizontally polarized wave and nondirectivity in the horizontal plane are preferred. A VOR antenna consists of a carrier antenna and a sideband antenna-an aircraft receives separate signals from these two antennas and compares them to obtain azimuth information. The mutual coupling between the elements forming the carrier and the sideband antenna affects the directivity of the single elements, resulting in errors in azimuth information. With the mutual coupling between the antenna elements being taken into consideration, a quantitative calculation was made by using the moment method-the results of the calculation made it clear that a loading reactance value of -320 Ω is better to make not mutually coupled elements nondirectional while a loading reactance value of -600 Ω is optimum to minimize the azimuth error of a CVOR  相似文献   
5.
An outbreak of Cryptosporidiosis occurred over three months in a British Columbia community, peaking in December 1990. Results of the case-control study and illness surveys support the hypothesis that transmission occurred in a public children's pool at the local recreation centre. Analysis using lab-confirmed cases revealed a matched odds ratio of 4.5 [95% CI 0.97, 20.83], and using clinical cases an unmatched odds ratio of 12.8 [95% CI 3.68, 46.77], associated with swimming in the children's pool within two weeks prior to onset of illness. Other risk factors were not significant. Attack rates in various groups of children's pool users ranged from 8% to 78%. The children's pool was closed for steam cleaning and disinfection. Unusually frequent defecations including liquid stools had occurred before and during the outbreak. Improvements were instituted for removal of feces and superchlorination of pool water.  相似文献   
6.
7.
Remarkably rapid nitriding which is independent of diffusion theory based on the thermal activation process, was observed during nitriding of austenitic Fe-Ni-Cr steels containing 16 and 19 mass% chromium. Increase of the chromium content in the alloys yielded increasing thickness of the nitrided layer, i.e. the internal nitriding theory did not hold in the nitriding. No rapid nitriding was observed in steels containing less than 13 mass% chromium. Hence the limiting concentration of chromium for the rapid nitriding will lie between 13 and 16 mass% chromium. A solution to the problem of abnormalities arising during nitriding of practical austenitic stainless steels which have been investigated since 1972, has been presented experimentally by nitriding various chromium-containing steels. Based on the experimental results, the origin of the rapid nitriding is discussed in connection with the free-energy function of Cr2N and CrN to temperature. In particular, a plateau of nitrogen concentration measured in the nitrided layers leads to the conclusion that a forced nitrogen diffusion in the layer resulted in the rapid nitriding.  相似文献   
8.
9.
Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2.  相似文献   
10.
This paper describes the implicit integration and consistent tangent modulus of an inelastic constitutive model with transient and steady strain rates, both of which are time‐ and temperature‐dependent; the transient rate is influenced by the evolution of back stress decomposed into parts, while the steady rate depends only on applied stress and temperature. Such a non‐unified model is useful for high‐temperature structural analysis and is practical owing to the ease in determining material constants. The implicit integration is shown to result in two scalar‐valued coupled equations, and the consistent tangent modulus is derived in a quite versatile form by introducing a set of fourth‐rank constitutive parameters into the discretized evolution rule of back stress. The constitutive model is, then, implemented in a finite element program and applied to a lead‐free solder joint analysis. It is demonstrated that the implicit integration is very accurate if the multilinear kinematic hardening model of Ohno and Wang is employed, and that the consistent tangent modulus certainly affords quadratic convergence to the Newton–Raphson iteration in solving nodal force equilibrium equations. Copyright © 2003 John Wiley & Sons, Ltd.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号