Romanian River Basins Lag Time Analysis. The SCS-CN Versus RNS Comparative Approach Developed for Small Watersheds

Romanian policy makers have to perceive that human intervention on river basins land cover is influencing rainfall-runoff relation and the used methodology cannot accurately estimate watershed surface flow transformations. Global water cycles and energy fluxes understanding is leading to better predictions of land atmosphere interaction and local hydro-climates evolution. The water transfer time determination from rainfall to runoff needs accurate measurements of river basins hydrological parameters. Here, we analyzed and compared the lag time value results of two different methodologies (curve number and rational methodology) used for 54 Romanian small catchment areas study. The focus of this paper is the lag time evaluation and interpretation for an effective implementation of the best methodology approach in the Romanian geographical space. Our research in small river basins was developed using remote sensing technology maps, GIS and environmental datasets in combination with field work on every drainage basin in order to assess the specific morphological features and validate the land cover typology. We found that Soil Conservation Service - Curve Number (SCS-CN) method is widely used according to USA landscape features classification, but not necessarily applicable to Romanian river basins characteristics. Our results show how the official Romanian rational methodology national standard (RNS) can be improved and the limits of SCS-CN method.

     

Compressive properties of pristine and SiC-Te-added MgB2 powders,green compacts and spark-plasma-sintered bulks

Pristine and (SiC+Te)-added MgB₂ powders, green and spark plasma sintered (SPS) compacts were investigated from the viewpoint of quasi-static and dynamic (Split-Hopkinson Pressure Bar, SHPB) compressive mechanical properties The amount of the additive (SiC+Te) was selected to be the optimum one for maximization of the superconducting functional parameters. Pristine and added MgB₂ show very similar compressive parameters (tan δ, fracture strength, Vickers hardness, others) and fragment size in the SHPB test. However, for the bulk SPSed samples the ratio of intergranular to transgranular fracturing changes, the first one being stronger in the added sample. This is reflected in the quasi-static K_IC that is higher for the added sample. Despite this result, sintered samples are brittle and have roughly similar fragmentation behavior as for brittle engineering ceramics. In the fragmentation process, the composite nature of our samples should be considered with a special focus on MgB₂ blocks (colonies) that show the major contribution to fracturing. The Glenn-Chudnovsky model of fracturing under dynamic load provides the closest values to our experimental fragment size data.     

测井新技术在四川油气勘探开发中的应用

综述随着四川盆地油气勘探深入所面临的油气领域复杂和困难的技术问题，介绍应用测井新技术为四川油气开发解决了大量的技术难题，特别是在复杂缝，洞型储层的评价，井旁地质构造形态精细分析和地质，测井，地震多学科结合储层横向预测等3个方面所取得的良好应用效果。     

Research issues in genomic signal processing

Genomic signal processing (GSP) concerns the processing of genomic signals. It may be defined as the analysis, processing, and use of genomic signals to gain biological knowledge and the translation of that knowledge into systems-based applications. In this article, the authors discuss the key research issues for GSP. It is important to recognize that "genomic signal processing" is not a name for genomic bioinformatics nor for the application of signal processing methods in genomics. We note that the research issues pertaining to GSP fit within the overall challenges confronting research in the area of multimodal biomedical systems.     

Channel-carrier mobility parameters for 4H SiC MOSFETs

In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide–semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (D_it) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic.     

空气井测井响应现象分析与探讨

空气钻井作为一种新的钻井技术已在四川油田川东地区的zbl井首次投入使用。2003年2月1日，四川测井公司数控分公司对该井进行了测井施工作业，采集了合格的井径、自然伽马、补偿声波、补偿中子、补偿密度和深浅双侧向资料。针对空气井测井中出现的现象进行了分析与探讨，旨在为今后空气井测井系列的选择与解释奠定基础。     

An EKV-based high voltage MOSFET model with improved mobility and drift model

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.