On Heating and Relaxation of the Electron—Hole-Gas Energy in the Track of a Primary Recoil Atom

Semiconductors - On the basis of the Monte Carlo algorithm, a method for calculating the energy spectrum of hot nonequilibrium electrons and holes in the track of a primary recoil atom after being...     

Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained.     

Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.     

Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes

Semiconductors - The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes...     

Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides

Semiconductors - The current–voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of...     

Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure

Semiconductors - The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume...     

Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

This study is concerned with the effect of irradiation on the luminescence properties of low-dimensional Si/Ge heterostructures with different degrees of spatial localization of charge carriers. It is shown that the radiation stability of Si/Ge heterostructures is improved with increasing efficiency of localization of charge carriers in the structures. The spatial localization of charge carriers in the SiGe nanostructures decreases the probability of nonradiative recombination of charge carriers at radiation defects produced in the Si matrix. It is demonstrated that, among the structures explored in the study, the highest radiation stability of luminescence properties is inherent in the multilayered structures containing self-assembled Ge(Si) nanoislands, in which the most efficient spatial localization of charge carriers is attained. In this case, the localization is three- and two-dimensional, correspondingly, for holes in the islands and for electrons in the Si layers that separate neighboring layers containing the islands.