Analytic investigation of frequency sensitivity in microwave oscillators: Application to the computation of phase noise in a dielectric resonator oscillator

The conversion of low frequency noise into phase noise in microwave oscillators is studied through an analytical calculation of the pushing factor. This calculation is based on a simplified equivalent circuit for two types of active devices : field effect transistors (Fet) and heterojunction bipolar transistors (hbt). The preeminence in the conversion process of the gate- source capacitance in theFet and the base- emitter junction in thehbt is pointed out. Practical methods are proposed to reduce the phase noise in these circuits.     

A sub-nanosecond Synchronized MAC – PHY cross-layer design for Wireless Sensor Networks

In this paper, we present a Wireless Sensor node implementation which aims at solving two major issues in Wireless Sensor Networks. This solution provides nanosecond-scale synchronization between nodes and high data-rate transmission thanks to cross-layer design and the time-domain properties of UltraWide Band (UWB) modulation schemes. The high data rate is achieved through a specific implementation of a IR-UWB physical layer. Specific algorithms are also implanted into the MAC and physical layers and form a cross-layered synchronization protocol for deterministic Wireless Sensor Networks named WiDeCS (Wireless Deterministic Clock Synchronization). This protocol propagates master time reference to nodes of a cluster tree network. WiDeCS Cross layered scheme is possible thanks to flag signals rising in the physical layer. These signals, owing to the UWB time domain properties, capture precise timestamps of transmission and reception. Hardware level simulations show a clock synchronization precision of 2 ns with a 2 GHz bandwidth signal, and an ASIC demonstrator shows 374 ps synchronization precision and 677 ps of standard deviation with the same bandwidth. In this paper, the physical layer implementation is detailed, and the cross-layered WiDeCS scheme is demonstrated.     

A linear 60 GHz 65 nm-CMOS power amplifier realization and characterization for OFDM signal

A millimeter-wave Power Amplifier (PA) based on a 65nm CMOS technology from STMicroelectronics has been designed. The targeted feature is the unlicensed band around 60 GHz suitable for wireless personal area network application (WPAN). To optimize the linearity, the PA is designed under class A biasing to have an output compression point (OCP₁) close to its saturated Power (P _sat). S-parameters and large signal measurement results are demonstrated and compared with electromagnetic simulations. The PA offers a P _sat of 8.3 dBm, an OCP₁ of 6 dBm and a gain of 6.7 dB. The die area is 0.29 mm² with pads. Considering those results, one-tone simulations are not sufficient to characterize the linearity performances of the PA in its real conditions of use. Consequently, two-tone simulations are firstly performed. After, linearity figures of merit (FoM) are discussed applying an orthogonal frequency-division multiplexing (OFDM) modulated signal. The PA offers an adjacent channel power ratio (ACPR) of 15 dB and an error vector magnitude (EVM) of 20% at PA compression operating mode.     

Process Optimisation of In Situ H2 Generation From Ammonia Using Ni on Alumina Coated Cordierite Monoliths

A catalyst of Ni supported on alumina coated monolith has been prepared, characterized and tested in NH₃ decomposition. The characterization of the catalyst by XPS and TPR showed that there is no formation of aluminates after catalyst use. It is studied the effect of the space velocity, by varying the feed flow rate and the catalyst??s length. Some evidences are shown about the reaction inhibition by produced H₂ and about the reasons for the better performance of the monolith than packed bed catalyst.     

On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies

This paper reviews the state of the art knowledge related to critical failure mechanisms in electrostatic micro- and nano-electromechanical systems (MEMS and NEMS) which are the dielectric charging and stiction. It describes also the recent employed nanoscale characterization techniques for these phenomena based on Kelvin probe force microscopy (KPFM) and force–distance curve measurements. The influence of relative humidity and dielectric deposition conditions on the charging/discharging processes is discussed. Moreover, different stiction mechanisms induced by electrostatic force and/or meniscus formation are analyzed. Finally, novel characterization methods are presented and used to correlate between the results from MEMS devices and metal–insulator–metal (MIM) capacitors. These methods are employed in view of application in electrostatic capacitive MEMS switches and could be easily extended to explore other NEMS/MEMS devices. The study provides an accurate understanding of the charging and stiction related failure mechanisms, presents guidelines for a proper packaging environment, and reveals precise explanations for the literature reported device level measurements of electrostatic MEMS devices.     

Transimpedance amplifier-based full low-frequency noisecharacterization setup for Si/SiGe HBTs

An experimental setup, based on current/voltage conversion through transimpedance amplifiers (TAs), has been implemented for the direct full low-frequency noise (LFN) characterization of Si/SiGe heterojunction bipolar transistors (HBTs) in terms of base and collector short-circuit current noise sources. This setup performs a full characterization, as it measures simultaneously the two noise current sources and their correlation, thanks to an original technique based on the specific properties of a specially designed buffer amplifier using a low-noise common-base bipolar transistor (CB BJT). By means of translation formulae, the obtained measurements are compared with those carried out with a multi-impedance technique. They show a good agreement both for the noise sources spectral densities and for their correlation. The TA-based setup provides enhanced capabilities in terms of measurement speed and remote control potentialities     

On the influence of environment gases, relative humidity and gas purification on dielectric charging/discharging processes in electrostatically driven MEMS/NEMS devices

In this paper, we investigate the impact of environment gases and relative humidity on dielectric charging phenomenon in electrostatically actuated micro- and nano-electromechanical systems (MEMS and NEMS). The research is based on surface potential measurements using Kelvin probe force microscopy (KPFM). Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films were investigated in view of applications in electrostatic capacitive RF MEMS switches. Charges were injected through the atomic force microscope (AFM) tip, and the induced surface potential was measured using KPFM. Experiments have been performed in air and in nitrogen environments, both under different relative humidity levels ranging from 0.02% to 40%. The impact of oxygen gas and hydrocarbon contaminants has been studied for the first time by using different gas purifiers in both air and nitrogen lines. Voltage pulses with different bias amplitudes have been applied during the charge injection step under all investigated environmental conditions in order to investigate the effect of bias amplitude. The investigation reveals a deeper understanding of charging and discharging processes and could further lead to improved operating environment conditions in order to minimize the dielectric charging. Finally, the nanoscale KPFM results obtained in this study show a good correlation with the device level measurements for capacitive MEMS switches reported in the literature.     

Evaluation of noise parameter extraction methods

The influence of the algorithm used for noise parameter fitting on the accuracy of the microwave noise parameter measurements is investigated. Five different commonly used algorithms are compared by a statistical analysis including instrument accuracy specifications. Some of these algorithms are found to be more efficient in terms of available accuracy and computer time. The best predicted available accuracies reported betwen 4 and 20 GHz for each noise parameter compare well with observed accuracies on noise parameter measurements performed with a dedicated test set on a noise standard made of a passive two-port. The accuracy on minimum noise figure is found to be 0.1 dB maximum