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Svitsiankou I. E. Pavlovskii V. N. Muravitskaya E. V. Lutsenko E. V. Yablonskii G. P. Borodavchenko O. M. Zhivulko V. D. Mudry A. V. Yakushev M. V. Kognovitckii S. O. 《Semiconductors》2020,54(10):1247-1253
Semiconductors - The emission spectra of thin nanocrystalline films of Cu(In1 – xGax)(SySe1 – y)2 (CIGSSe) direct-gap solid solutions in the structure of solar cells, recorded upon... 相似文献
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Lutsenko E. V. Rzheutski M. V. Vainilovich A. G. Svitsiankou I. E. Shulenkova V. A. Muravitskaya E. V. Alexeev A. N. Petrov S. I. Yablonskii G. P. 《Semiconductors》2018,52(16):2107-2110
Semiconductors - The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and... 相似文献
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Bodnar I. V. Chan B. T. Pavlovskii V. N. Svitsiankou I. E. Yablonskii G. P. 《Semiconductors》2019,53(12):1593-1596
Semiconductors - MnAgIn7S12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the... 相似文献
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