Liquid crystalline side-chain polysiloxanes containing mesogenic groups attached by esterification

Summary Liquid crystalline side-chain polysiloxanes were prepared without metal complex catalyst. Mesogenic groups such as cholesteryl, 4-cyano-4-biphenyl and 4-methoxy-4-biphenyl group were introduced into polysiloxane by esterification and from DSC measurements they were compatible with other liquid crystalline polysiloxanes reported previously.     

Arrhythmogenic right ventricular cardiomyopathy underlies syndrome of right bundle branch block, ST-segment elevation, and sudden death

In all experimental mammals tested (rats, dogs, primates), intramuscular injections of the oil-soluble antimalarial artemisinin derivatives artemether and arteether have produced an unusual pattern of selective damage to brain stem centers predominantly involved in auditory processing and vestibular reflexes. Artesunate, the most widely used of these compounds, is a water soluble hemisuccinate derivative given parenterally either by intravenous or intramuscular injection. The neurotoxic potential of parenteral artesunate and artemether was compared in a murine model. Adult Swiss albino mice were assigned randomly to 28-day regimens of intramuscular artemether or artesunate in doses ranging from 30 to 100 mg/kg/day. At 30 mg/kg/day, no abnormalities were detected with either drug. At 50 mg/kg/day, abnormalities were observed in six of 12 artemether recipients and two of 12 artesunate recipients. These were reversible in all but one (artemether) mouse. At 100 mg/kg/day, eight of 36 artemether recipients, two of 36 artesunate recipients, and one of 18 control mice died. All but four surviving mice in the artemether group (86%) showed obvious and usually irreversible abnormalities of balance and equilibrium, whereas only four artesunate recipients (11%) exhibited abnormalities, and these were reversible in each case (P < 0.001). At this dose the relative risk (95% confidence interval) for death or disability was 5.3 (2.6-11.2) for artemether recipients. Intramuscular artemether is significantly more neurotoxic than intramuscular artesunate in this murine model.     

Aging behavior and surge endurance of 870-900 nm AlGaAs lasers with nonabsorbing mirrors

The reliability of 870-900 nm AlGaAs TJS lasers has been investigated. An emission wavelength longer than 870 nm is realized by utilizing the band tailing effect due to heavy Zn-diffusion in the active region. A nonabsorbing mirror structure is employed to eliminate both gradual degradation and catastrophic damage of the facets. Stable continuous operation for over 10 000 hours has been confirmed at ambient temperatures higher than 50°C and output powers more than 5 mW/ facet. MTTF longer than 10⁵hours is expected for screened devices. Surge endurance has been improved to be nearly one order of magnitude higher than that for a conventional structure.     

Narp regulates long-term aversive effects of morphine withdrawal.

Although long-lasting effects of drug withdrawal are thought to play a key role in motivating continued drug use, the mechanisms mediating this type of drug-induced plasticity are unclear. Because Narp is an immediate early gene product that is secreted at synaptic sites and binds to alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) receptors, it has been implicated in mediating enduring forms of synaptic plasticity. In previous studies, the authors found that Narp is selectively induced by morphine withdrawal in the extended amygdala, a group of limbic nuclei that mediate aversive behavioral responses. Accordingly, in this study, the authors evaluate whether long-term aversive effects of morphine withdrawal are altered in Narp knockout (KO) mice. The authors found that acute physical signs of morphine withdrawal are unaffected by Narp deletion. However, Narp KO mice acquire and sustain more aversive responses to the environment conditioned with morphine withdrawal than do wild type (WT) controls. Paradoxically, Narp KO mice undergo accelerated extinction of this heightened aversive response. Taken together, these studies suggest that Narp modulates both acquisition and extinction of aversive responses to morphine withdrawal and, therefore, may regulate plasticity processes underlying drug addiction. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

High drive-current electrically induced body dynamic threshold SOIMOSFET (EIB-DTMOS) with large body effect and low threshold voltage

A novel electrically induced body dynamic threshold metal oxide semiconductor (EIB-DTMOS) is proposed where the body is electrically induced by substrate bias and its high performance is demonstrated by experiments and simulations. EIB-DTMOS achieves a large body effect and a low V_th at the same time. The upper limit of the supply voltage of the EIB-DTMOS is higher than that of a conventional DTMOS, because the forward biased p-n junction leakage current of the EIB-DTMOS is lower. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest drive-current at fixed off-current due to a large V_th Shift (or large back gate capacitance) and a suppressed short channel effect     

GaAs-MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces

Direct oxidation by an ultraviolet (UV) and ozone process and oxinitridation (plasma nitridation after oxidation) of GaAs surfaces were used to form nanometer-scale gate insulating layers for depletion-type recessed gate GaAs-MISFETs. The drain current-drain voltage characteristics of the oxide gate devices exhibit lower transconductance (max. 40 mS/mm), lower breakdown voltage and smaller gate capacitance than the oxinitrided gate devices. The presence of hysteresis in the oxide gate devices is also apparent. The maximum transconductance of the oxinitrided gate devices is 110 mS/mm and they have a sharper pinch-off, compared to the oxide gate devices. In addition, no hysteresis is observed in their current voltage curves. The current gain cutoff frequency of 1.4 /spl mu/m gate-length FETs for both types is 6 GHz. These results correspond well with results obtained from characterization of these insulating films.     

Improved selective growth of InP around dry-etched mesas by metalorganic chemical vapor deposition at low growth temperature

A comparative study has been carried out regarding selective embedding growth of InP by metalorganic chemical vapor deposition (MOCVD) around dry-etched mesas, using two types of reactors: a conventional horizontal type and a highspeed rotating-susceptor type. In the case of the conventional horizontal-type MOCVD, overgrowth on the mask was observed when the growth temperature was low (600°C). On the other hand, an almost planar grown surface without such overgrowth was achieved by using the high-speed rotating-susceptor MOCVD for a wide range of growth temperatures, especially even at a low growth temperature of 580°C. Regarding the high-speed rotating-susceptor MOCVD, we have also investigated the effects of dopants on the growth behaviors and have found a remarkable difference between n-type S-doped and p-type Zn-doped InP in the growth behaviors. The mechanism for suppressing overgrowth in case of the high-speed rotating-susceptor MOCVD, as well as the cause for the different effects between the dopants, are discussed.     

$V_rm DD$-Hopping Accelerators for On-Chip Power Supply Circuit to Achieve Nanosecond-Order Transient Time

A V_DD-hopping accelerator for on-chip power supply circuits is proposed and the effectiveness of the accelerator circuit is experimentally verified. The quick dropper with the linear regulator enables nanosecond-order transient time in on-chip distributed power supply systems. The measured transition time is less than 5 ns with a load circuit equivalent to 25-k logic gates in 0.18-mum CMOS. This is to be compared with the case without the accelerator of the order of mus and thus the acceleration by two orders of magnitude is achieved. Extensions of the basic approach are also discussed including implementation of the quick dropper for a switching DC-DC converter, the control stability improvement, automatic timing generation, and the parasitic element effects of the power lines     

Reliability of AllnAs/lnGaAs/lnP HEMT with WSi ohmic contacts

We have investigated the degradation mechanism of Al_0.48In_0.52As/In_0.53Ga_0.47As/ InP high electron mobility transistors (HEMTs) using WSi ohmic electrodes. Cross-sectional transmission electron microscopy (TEM) observation and en-ergy dispersive x-ray (EDX) analysis reveal impurities diffusion of gate electrode (titanium: Ti) and fluorine (F) in the AlInAs layer after a high temperature (T_a = 170°C operating life test for 500 h. The decrease of drain current (I_ds) during life test shows linear dependence on square root of aging time. It suggests that the degradation is controlled by a diffusion mechanism. Hence, the estimated degradation mechanism of this device is related with decrease of carrier concentration in the epitaxial layer by these diffused impurities. On the other hand, TEM and EDX show no degradation of WSi/InGaAs interface after aging. Therefore, the WSi electrode for this type of HEMT demonstrates excellent high stability under the accelerated operating life test.