Use of the radiofrequency-intermodulation distortion technique to investigate intrinsic nonlinearity at the electrode-electrolyte interface

We report on investigations of nonlinear radiofrequency responses of electrolytes with Na(+) and Cl(-) ions placed within gold electrodes of a capacitor. The sample was part of a frequency-adjustable inductance-capacitance-resistance (LCR) parallel resonant circuit, and measurements were carried out using the two frequencies intermodulation distortion technique. We employed double layer model to analyze the observed nonlinearities and their dependence on ionic concentration. Electrode-electrolyte interface polarization was found to be a predominant cause of this intrinsic nonlinearity and to be dependent on electrolytic ion concentration. We also measured and calculated coefficients of resistive and capacitive components of the observed nonlinearity.     

Doping of trench capacitors by rapid thermal diffusion

A new rapid thermal diffusion process for shallow, heavily doped trench junctions in high density dynamic RAMs is described. Planar dopant sources are formed by spin-coating rigid substrates, such as silicon wafers or solid dopant sources, with liquid dopants. Diffusion takes place at high temperatures when the source, placed in proximity to the silicon wafer, releases dopant via evaporation followed by diffusion to the silicon surface. Well-controlled, heavily doped shallow junctions are readily obtained for B, P, and As. The doping process is shown to provide uniform doping of high-aspect-ratio trenches. Process control is achieved by controlling the wafer temperature and duration of the process. Junction depths near 0.1 μm have been demonstrated over the entire surface of trenches 0.7 μm in diameter and 6 μm in depth     

Fabrication of submicron junctions-proximity rapid thermaldiffusion of phosphorus, boron, and arsenic

Various techniques used in fabrication of deep submicron junctions are reviewed with respect to their advantages and disadvantages in silicon very large scale integration (VLSI) circuits technology. Proximity rapid thermal diffusion is then presented as an alternative process which results in very shallow junctions with high dopant concentrations at the surface. The feasibility of Si doping with B, P, and As for both planar and 3-D structures such as trench capacitors used in high density DRAM memories is shown based on sheet resistance measurements, secondary ion mass spectroscopy and scanning electron micrographs. Retardation effect of arsenic diffusion similar to the well known inhibition of silicon or SiO₂ deposition in chemical vapor deposition (CVD) processes is identified and discussed