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用旋涂技术在PET衬底室温沉积透明导电PEDOT:PSS/Ag NW/PEDOT:PSS复合膜。用紫外-可见分光光度计、霍尔效应测量系统、X射线衍射仪和场发射扫描电子显微镜对透明导电复合膜的光学透过率、面电阻、结晶性和表面形貌进行了表征。复合膜XRD衍射图呈现Ag (111) 和 Ag (200)特征衍射峰,Ag纳米线网络具有Ag (111)择优取向的多晶结构。复合膜3-PEDOT:PSS/5-Ag NW/3-PEDOT:PSS在550nm波长的透过率高达83.95%,面电阻低至21.98 ?/sq。 相似文献
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用GGA+U的方法研究了本征β-Ga2O3和Ti掺杂β-Ga2O3的电子结构和光学性能。晶格常数的计算值与实验值差别小于1%,本征β-Ga2O3的带隙计算值4.915eV,与实验值4.9eV一致。Ti替位Ga(1)位置和Ti替位Ga(2)位置的β-Ga2O3的价带最大值和导带最小值间隙分别为4.992eV和4.955eV,Ti掺杂引入的杂质带起到中间带作用,可以使电子从杂质带跃迁到导带和价带跃迁到杂质带。Ti掺杂β-Ga2O3中间带的存在使其成为潜在的宽光谱吸收太阳能电池材料。 相似文献
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Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga2O3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga2O3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga2O3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga2O3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10^-3 Ω^ -1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga2O3 layer thickness of 15 nm. 相似文献
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用第一性原理计算了本征SnO2、Zn掺杂SnO2、带Sn 空位(VSn)的SnO2和Zn-VSn共掺杂 SnO2的电子结构和光学性能。结果表明,Zn 原子替位SnO2中的Sn原子后费米能级进入价带,价带顶的空能态由Zn 3d和O 2p态组成,Zn掺杂SnO2显示p型半导体性能。 带Sn空位的Zn掺杂SnO2的相对空穴数量较Zn掺杂SnO2的相对空穴数量有明显增加,Sn空位有助于增加Zn掺杂SnO2的p型导电性。Zn掺杂SnO2在可见光区域有明显的光吸收,带Sn空位的Zn掺杂SnO2的光吸收较Zn掺杂SnO2明显增强,吸收光谱发生蓝移。 相似文献
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