Mo背电极对CIGS吸收层成分与结构的影响

采用直流磁控溅射法,通过调整溅射气压制备双层和三层Mo背电极层,并在其上制备(In,Ga)_2Se_3(IGS)和Cu(In,Ga)Se_2(CIGS)。采用X射线荧光光谱(XRF)和X射线光电子能谱(XPS)测量成分;用扫描电子显微镜(SEM)观察IGS和CIGS的表面和断面形貌;用X射线衍射(XRD)研究背电极层对IGS和CIGS结晶取向的影响。结果表明,背电极的不同可影响CIGS表面Na的分布;三层Mo背电极层上制备的CIGS吸收层具有112择优,晶粒较大,贯通性更优;三层Mo背电极层上制备的CIGS电池的效率为14.1%,其中较双层J_(sc)和FF分别有9.4%和15.5%的提升。     

Influence of growth temperature and thickness on the orientation of Cu(In,Ga)Se2 film

Cu(In,Ga)Se2(CIGS) films are deposited on the Na-free glass substrate using three-stage co-evaporation process,and the effects of thickness and growth temperature on the orientation of CIGS film are investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM).When the growth of CIGS film does not experience the Cu-rich process,the increase of the growth temperature at the second stage(Ts2) promotes the(112) orientation of CIGS film,and weakens the(220) orientation.Nevertheless,when the growth of CIGS film experiences Cu-rich process,the increase of Ts2 significantly promotes the(220) orientation.In addition,with the thickness of CIGS film decreasing,the extent of(In,Ga)2Se3(IGS) precursor orientation does not change except for the intensity of Bragg peak,yet the(220) orientation of following CIGS film is hindered,which suggests that(112) plane preferentially grows at the initial growth of CIGS film.     

Ar流量对磁控溅射制备Al掺杂ZnO薄膜的影响

Al掺杂ZnO(AZO)具有电导率高、光学透射率高的优点,且原料来源丰富、制备成本低廉,被认为是最有应用潜力的透明导电薄膜。本文利用射频磁控溅射制备30 cm×30 cm尺寸大面积AZO薄膜,研究了气压恒定时,Ar流量对薄膜晶粒生长机制、电学和光学性能的影响。结果表明,AZO薄膜晶粒均表现出垂直基片方向的c轴择优取向生长,随Ar流量增大取向变弱;薄膜表面晶粒尺寸大小分布不均匀,随Ar流量增大,大晶粒数量增多,表面出现长度为100 nm、宽度为30 nm的棒状晶;随着Ar流量增大,载流子浓度由4.52×1020 cm-3略微增大至6.2×1020 cm-3,霍尔迁移率由4.79 cm2(/V·s)提升至10.46 cm2(/V·s),电阻率在Ar流量94 mL/min时达到最低值1.01×10-3Ω·cm。薄膜可见光平均透射率均大于78%,禁带宽度约3.8 eV。     

化学水浴沉积制备高质量Zn(O,S)薄膜及其性能研究

为获得铜铟镓硒薄膜太阳电池中高质量Zn(O,S)无镉缓冲层薄膜,该研究阐述了柠檬酸三钠作为络合剂制备Zn(O,S)薄膜的成膜机理,系统性研究了该体系下各反应参数对薄膜化学水浴沉积的影响。研究表明,柠檬酸三钠的浓度值显著影响反应类型,异质反应更有利于生成高质量薄膜。同时,柠檬酸三钠与金属离子浓度的比值直接影响成膜质量和成膜速率,适合的pH溶液环境有助于提高Zn(O,S)薄膜沉积的质量。此外,通过工艺参数的优化,获得了电学性能接近传统CdS/CIGS太阳电池的Zn(O,S)/CIGS电池器件。     

Sn doped ZnO thin films as high resistivity window layer for Cu(In,Ga)Se2 solar cells

For high efficiency Cu(In,Ga)Se2 (CIGS) solar cell, the high-resistivity layer with high optical transmittance has to be adopted between the buffer layer and the high-conductivity window layer. In this paper, we propose Sn doped ZnO (ZTO) film, instead of the traditional intrinsic ZnO (i-ZnO) film, as an alternative n-type high-resistivity window layer for CIGS solar cell. In this experiment, both ZTO and i-ZnO films are strong (002) oriented, and the surface morphologies of the two films are almost the same. The statistical roughnesses of i-ZnO film and ZTO film are 0.58 nm and 0.63 nm, respectively. However, the optical transmittance of ZTO film is higher than that of i-ZnO film with the same thickness. The efficiency of ZTO based CIGS cell was 14.24%, which is almost the same as the efficiency of i-ZnO based CIGS cell. These results fully suggest that it is very feasible to replace i-ZnO with ZTO as the high resistant window layer.     

新型CIGS阻挡层多横向界面Mo的特性及对器件性能的影响

采用磁控溅射方法,在不锈钢箔上制备多横向界 面Mo(M-Mo,multi-transverse interface Mo)和单横向界面Mo(S-Mo)薄 膜,并利用共蒸发三步法分别在M-Mo和S-Mo薄膜上制备Cu(In,Ga)Se₂(CIGS)薄膜及 器件。通过二次离子质谱仪(SIMS)、X射线衍射仪(XRD)和扫描电子显微镜(SEM)研究了不同 结构的Mo薄膜对CIGS影响。通过I-V测试,表征M-Mo和S -Mo作为背电极的CIGS电池电学性能。XRD结果显示,M-Mo和S-Mo 薄膜均以(110)为择优取向。SEM结果显示,M-Mo薄膜相对 于S-Mo,薄膜晶粒 较小,粗糙度较大。J-V测试结果显示,M-Mo薄膜作为背 电极的电池的开路电压Voc、短路电流J sc和填充因子(FF)均有所提高。     

溅射气压对磁控溅射Mo背电极层形貌与结构的影响

采用直流磁控溅射法在溅射气压为0.1~1.0Pa下制备了金属Mo膜。用扫描电子显微镜(SEM)和原子力显微镜(AFM)对单层Mo膜的表面、断面形貌和粗糙度进行了分析与表征;用X射线衍射(XRD)研究了气压对Mo膜晶粒尺寸和薄膜应力应变的影响;用SEM观察了双层和三层Mo背电极层的表面形貌。结果表明,溅射气压升高,表面颗粒由细长变得圆润,均方根粗糙度升高,其值介于1.32~4.81nm之间;Mo膜的晶粒尺寸随气压的升高而降低,其值介于27.2~11.7nm之间;溅射气压为0.2Pa和0.3Pa时制备的Mo膜显现为张应力;将双层Mo背电极表面制备0.7Pa的Mo层后,表面更加圆润,孔隙增多。     

反应溅射沉积Zn(O,S)薄膜的全成分调控和光学性能修饰（英文）

在传统的CIGS薄膜太阳能电池中，CdS薄膜通常起到缓冲层的作用，但Cd有毒且不环保。无镉缓冲层的研究对于提高CIGS电池的环保性具有重要的现实意义。本工作采用射频反应磁控溅射制备Zn(O,S)薄膜，并研究了薄膜的成分、表面形貌、光学带隙与溅射气氛中氧含量之间的关系。将Ar/O₂流量从0.5 sccm增加到8 sccm时，薄膜中的S含量从82%降低到13%。随着溅射气氛中O含量的增加，Zn(O,S)薄膜的O1s结合能从O-Ⅲ(～532 eV)逐渐向O-Ⅰ(～530 eV)移动，薄膜中的S含量逐渐降低的同时出现了S⁶⁺和S⁴⁺。表面形貌表征表明Zn(O,S)可以在CIGS吸收层表面形成致密覆盖。光学带隙具有弯曲特性且在3.07～3.52 eV可调，在S/(O+S)比为56%时获得了3.07 eV的最小光学带隙值。以溅射法Zn(O,S)作为缓冲层制备的CIGS太阳能电池的转换效率为10.19%,且对光浴处理不敏感。溅射制备的Zn(O,S)薄膜促进了CIGS太阳能电池的工业化应用。