Authenticity green coffee bean species and geographical origin using near-infrared spectroscopy combined with chemometrics

To prevent the adulteration of agricultural resources and provide a solution to enhance the green coffee bean supply chain, authentication using the near-infrared spectroscopy (NIRS) technique was investigated. Partial least square with discrimination analysis (PLS-DA) models combined with various preprocessing methods were built from NIR spectra of 153 Vietnamese green coffee samples. The model combined with the standard normal variate and the first order of derivative yielded excellent performance in predicting coffee species with the error cross-validation of 0.0261. PLS-DA model of mean centre and first-order derivative spectra also yielded good performance in verifying geographical indication of green coffee with the error of 0.0656. By contrast, the predicting abilities of post-harvest methods were poor. The overall results showed a high potential of the NIRS in online authentication practices.     

Controlling thickness to tune performance of high-mobility transparent conducting films deposited from Ga-doped ZnO ceramic target

Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm²/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm²/Vs, low resistivity of 5.3 × 10^?4 Ωcm, and good transmittance of 83.3 %.     

Negation as failure for disjunctive logic programming

We generalize the Negation-as-Failure procedure for disjunctive logic programming. Then we compare our method with related methods in the literature. We also propose a new completion theory for disjunctive logic programs which allows some program clauses to have inclusive meaning and the others exclusive meaning.     

The maximum bit rates of soliton communication systems with lumpedamplifiers and filters in different distances

The maximum bit rate of a soliton communication system with lumped amplifiers and optical filters is considered. When the dispersion of the fiber varies from one amplifier spacing to another amplifier spacing, the maximum bit rate is significantly reduced. To overcome the effect, the amplitude of the soliton is amplified so that it is still the average soliton corresponding to the fiber dispersion for an amplifier spacing. Thus, the maximum bit rate is only slightly less than that without the dispersion variations. For a given distance, the maximum bit rate limited by the stability and soliton interaction is obtained. The result is compared with that limited by the Gordon-Haus effect. For shorter transmission distance, the maximum bit rate is limited by the stability and soliton interaction. For longer transmission distance, the maximum bit rate is limited by the Gordon-Haus effect     

Contribution a l'etude du polymorphisme de Ga2S3: Structure cristalline de Mn0,23Ga1,85S3

The Mn_0.23Ga_1.85S₃ phase belongs to the solid solution $\text{ф}{}_0$, stable at low temperature in the Ga₂S₃MnS system. It is hexagonal superstructure of the wurtzite, with the Ga₂S₃α′ type ($\text{a}\text{= 6.397}\text{A}\text{?}$; $\text{c}\text{= 18.027}\text{A}\text{?}$Z = 6; space groupe P6₁ or P6₅). Its crystal structure has been refined by the least squares method to a final R = 0.06 with 323 independant reflections. This structure is closely related to Ga₂S₃ α described by Hahn and Frank, and differs only by the partial occupation of the vacant metal site of Ga₂S₃ by Mn atoms in statistical disorder.     

Microscopic Origin of Casimir-Polder Forces

We establish a general relation between dispersion forces. First, based on QED in causal media, leading-order perturbation theory is used to express both the single-atom Casimir-Polder and the two-atom van der Waals potentials in terms of the atomic polarizabilities and the Green tensor for the body-assisted electromagnetic field. Endowed with this geometry-independent framework, we then employ the Born expansion of the Green tensor together with the Clausius-Mosotti relation to prove that the macroscopic Casimir-Polder potential of an atom in the presence of dielectric bodies is due to an infinite sum of its microscopic many-atom van der Waals interactions with the atoms comprising the bodies. This theorem holds for inhomogeneous, dispersing, and absorbing bodies of arbitrary shapes and arbitrary atomic composition on an arbitrary background of additional magnetodielectric bodies.