浅析氯碱生产中电槽冲箱废水的治理及回收

水做为氯碱企业重要的资源，在生产过程中起到举足轻重的作用，如何有效地利用好有限的水资源，使其发挥最大能效，是氯碱企业亟需研究解决的课题。     

浅谈氯碱企业如何搞好防火、防爆及消防工作

氯碱是重要的基本化工原料,在国民经济中起着非常重要的作用,被广泛用于轻工、纺织、造纸、建筑等行业。氯碱生产的特点决定其具有潜在的危险性,加之很多企业在管理、工艺设备等方面存在不足,使企业在快速发展的同时,也不同程度发生了一些事故,其中火灾和爆炸事故是危害程度最大,伤亡人数最多,损失最严重的事故。所以,预防和消除火灾、爆炸事故是氯碱企业生产中的重要环节,必须采取有针对性的防范措施。     

Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction

Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.     

Deterministic Magnetization Switching Using Lateral Spin–Orbit Torque

Current-induced magnetization switching by spin–orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin–orbit torques has relied on an external injection of out-of-plane spin currents into the magnetic layer, while an external magnetic field along the electric current direction is generally required for realizing deterministic switching by SOT. Here, deterministic current-induced SOT full magnetization switching by lateral spin–orbit torque in zero external magnetic field is reported. The Pt/Co/Pt magnetic structure is locally annealed by a laser track along the in-plane current direction, resulting in a lateral Pt gradient within the ferromagnetic layer, as confirmed by microstructure and chemical composition analysis. In zero magnetic field, the direction of the deterministic current-induced magnetization switching depends on the location of the laser track, but shows no dependence on the net polarization of external out-of-plane spin currents. From the behavior under external magnetic fields, two independent mechanisms giving rise to SOT are identified, i.e., the lateral Pt–Co asymmetry as well as out-of-plane injected spin currents, where the polarization and the magnitude of the SOT in the former case depends on the relative location and the laser power of the annealing track.     

Direct Polarimetric Image Sensor and Wide Spectral Response Based on Quasi-1D Sb2S3 Nanowire

Polarized photodetectors with wide spectral detection and ultra-fast photoresponses based on anisotropic semiconductors have potential applications in military and civilian fields and have been widely studied in recent years. The dual advantages of low-symmetry crystal structure and special electronic band-structure make Sb₂S₃ the perfect choice for polarized photodetection. In this work, the optical, vibrational, and optoelectronic anisotropy of the high-quality orthorhombic Sb₂S₃ nanowires are systematically investigated by experimental and theoretical studies. The metal-semiconductor-metal photodetectors based on a single Sb₂S₃ nanowire exhibit good polarization sensitivity in a broadband range from ultraviolet to near-infrared (360 to 1550 nm) and the obtained maximum dichroic ratio is 2.54 at 638 nm. The polarization-sensitive photocurrent mapping results show that the photocurrent is mainly derived from the Schottky junction at the interface between Au and Sb₂S₃. The effective separation of the photo-generated carriers near the Schottky junction gives a photodetector response time of 470 µs. The direct polarimetric imaging demonstrates that the gray value of the image obtained by the imaging system is sensitive to the object's polarized direction. This natural sensitivity of the Sb₂S₃-based photodetector to polarized objects makes it possible to image polarized objects directly as an image sensor.     

亚温淬火抑制25MnV钢的高温回火脆性

以25MnV钢生产过程中出现的回火脆性缺陷为研究对象,采用微观组织分析、力学性能测试等手段,研究了亚温淬火对25MnV钢组织与性能的影响。结果表明,与常规调质处理相比,亚温淬火后的25MnV钢可得到板条马氏体之间分布有条状铁素体的复相组织,在基本不降低强度的前提下,明显提高冲击韧性,抑制高温回火脆性。     

G105钻杆热处理裂纹分析与控制

针对石油钻井26CrMoNbTiB钢钻杆的表面裂纹问题,通过宏观分析、组织分析及能谱分析等手段,找出了钻杆在热处理淬火过程中表面裂纹形成的原因,提出了改进措施,并应用于工业生产。产品检验结果表明,改进措施取得良好应用效果。     

Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets

Emerging 2D metal chalcogenides present excellent performance for electronic and optoelectronic applications. In contrast to graphene and other 2D materials, 2D metal chalcogenides possess intrinsic bandgaps, versatile band structures, and superior atmospheric stability. The many categories of 2D metal chalcogenides ensure that they can be applied to various practical scenarios. 2D metal monochalcogenides, dichalcogenides, and trichalcogenides are the three main categories of these materials. They have distinct crystal structures resulting in different characteristics. Some basic device characteristics, such as the charge carrier characteristics, scattering mechanisms, interfacial contacts, and band alignments of heterojunctions, are vital factors for practical device applications that ensure that the desired properties can be achieved. Various electronic, optoelectronic, and photonic applications based on 2D metal chalcogenides have been extensively investigated. 2D metal chalcogenides are considered as competitive candidates for future electronic and optoelectronic applications.     

CuO/KCu7S4复合纳米材料的制备及其超级电容器性能

采用接替离子层吸附反应(SILAR)沉积法成功地在KCu₇S₄微米线上沉积CuO纳米片得到CuO/KCu₇S₄复合纳米材料,并应用于超级电容器的电极。通过对该纳米复合材料表征表明,随沉积次数增加,CuO的含量增加,该CuO为片状结构,均匀地分布于KCu₇S₄微米线上。在1A/g的电流密度下,沉积次数分别为0、20、40和60的样品比电容分别为10.04、25.52、30.84和40.92F/g。CuO/KCu₇S₄-60在0.7A/g的电流密度下比电容为47.6F/g,并且在5A/g的电流密度下进行1000次的循环充/放电测试后比电容增加到初始电容的117.29%。