Journal of Materials Science: Materials in Electronics - Zinc oxide (ZnO) rods film was fabricated by homemade and simple spray pyrolysis technique on a p-type silicon (Si) substrate, and the film... 相似文献
Since the importance of Schottkky devices, Au/ZnO/n-Si device were obtained, and the capacitance–voltage (C-V) and conductance-voltage (G-V) characteristics of Au/ZnO/n-Si device were studied using admittance spectroscopy at changing temperature from 160 to 340 K with 20 K intervals and ?1 to +2 V bias voltage range. The interface thin film ZnO layer was deposited on the n-type Si wafer by atomic layer deposition technique (ALD) in order to obtain homogenous interface layer. The layer thickness of ZnO was taken as 10 nm by the resulting ZnO film growth rate at about 1.45 Å per cycle. This thin film layer was characterized with XRD and AFM analyses. It can be seen from the C-V curves of the device that the capacitance values increased in depletion region with increasing temperature and exhibited peaks towards to forward biases after 240 K temperature. The changing of capacitance values confirmed re-ordering and re-structuring of charges in the interface of the device with changing temperature. The G-V curves of the device also increased with increasing temperature and towards to forward bias voltages due to increasing free charges in the interface. The series resistance (\({R}_{s}\)) of the device was taken into account to understand its effect on main electrical parameters, and it could be seen from these results that the \({R}_{s}\) strongly depends on the device temperature. The impedance (Z) values decreased with changing from ?1 to +2 V bias voltages and increasing temperature. The barrier height which was obtained from the C?2-V plots increased a slope of 0.00108 eV/K with a decrease in temperature from 160 to 340 K. It can be concluded that the Au/ZnO/n-Si device may be used and improved for next technological applications such as capacitor and memristor. 相似文献
Central venous catheterization is frequently performed for perioperative management and long-term intravenous access. Although complications associated with central venous catheter insertion have been widely reported, there are few reports of carotid-jugular arteriovenous fistula formation. Endovascular procedures are associated with a risk of immediate and delayed thromboembolic and ischemic complications. We describe a case of a carotid-jugular arteriovenous fistula and a cerebrovascular infarct following the insertion of a double-lumen catheter for hemodialysis access. We provide recommendations for the prevention and the early detection of this iatrogenic complication. 相似文献
Clustering is an efficient method to solve scalability problems and energy consumption challenges. For this reason it is widely exploited in Wireless Sensor Network (WSN) applications. It is very critical to determine the number of required clusterheads and thus the overall cost of WSNs while satisfying the desired level of coverage. Our objective is to study cluster size, i.e., how much a clusterhead together with sensors can cover a region when all the devices in a WSN are deployed randomly. Therefore, it is possible to compute the required number of nodes of each type for given network parameters. 相似文献
In this study, the electrical properties of an Al/p-Si metal/semiconductor photodiodes with Tetracyanoquinodimethane–Polyvinyl chloride (TCNQ–PVC) and PVC–TCNQ:ZnO interfacial layers were investigated. Growing of the interfacial layers on p-Si were fulfilled using electrospinning method as a fiber form. Al metallic and ohmic contacts were deposited via physical vapor deposition method. Scanning electron microscopy (SEM) pictures of the devices were captured to examine the morphology of the structure. Within the scope of electrical characterization, I–V measurements of the Al/PVC–TCNQ/p-Si and Al/PVC–TCNQ:ZnO/p-Si devices were accomplished both in the dark and under illumination conditions. Various device parameters, such as ideality factor and barrier height values were determined from I–V characteristics. Although the ideality factor values were obtained as 8.47 and 6.85 for undoped and ZnO-doped Al/PVC–TCNQ/p-Si diodes, the barrier height values were calculated as 0.84 for both devices. When a comparison was made between ZnO doped and undoped Al/PVC–TCNQ/p-Si diodes, it was evaluated that the rectification and photoresponse properties of the heterojunction diode was improved with ZnO dopant.
In the present work, novel redox ion-pairs (as cobalt and chromium) have been used in aqueous medium for the first time in the literature as electrolyte component of redox flow battery system. The electrochemical performance of the Co(II) and Cr(III) redox species as anolyte and catholyte was investigated by cyclic charge-discharge tests, respectively. Electrochemical behaviors of Cr(III) solutions in sulfuric acid solution were determined by using differential pulse voltammetry, electrochemical impedance spectroscopy and cyclic voltammetry via a typical three-electrode system. Morphological analyses of surface of pencil graphite electrode, which was used as anode in differential pulse voltammetric analysis, were done by scanning electron microscopy. Discharge capacity of the battery system consisting of 1.0 M Cr(III) as anolyte (negative electrolyte) and 1.0 M of Co(II) as catholyte (positive electrolyte) in 4.0 M of sulfuric acid was determined as 682.5 mAh (1.4 Ah L−1) with 4 mA cm−2 charge current density and 0.4 mA cm−2 discharge current density. Voltage efficiency, energy efficiency and coulombic efficiency of the battery were 70.1%, 53.8% and 57.2%, respectively. The discharge cell potential of the battery was also determined as 1.40 V. 相似文献
In this work, a novel aqueous electrolyte system consisting of cobalt and vanadium for redox flow battery was prepared to increase the cell voltage of the system for the first time in the literature. Electrolyte systems were characterized by using of cyclic voltammetry, differential pulse voltammetry, and electrochemical impedance spectroscopy to determine the effects of sulfuric acid and active ion concentration on the performance of the battery. Optimum sulfuric acid concentration was determined as 4.0 M for anolyte and catholyte. The effect of diffusion on mass transfer mechanism was higher than that of adsorption in each electrolyte of the flow battery system. Cyclic charge-discharge tests were carried out for the prepared novel electrolyte system. Discharge capacities of the electrolyte were determined as 430.1, 417.4, and 428.7 mAh for first cycle, second cycle, and third cycle, respectively. The cell potential of the redox flow battery in the electrolyte system during the charging process increased to 2.35 V which was also relatively higher than those of aqueous vanadium redox flow battery and aqueous iron flow battery. Obtained redox flow battery composition with its high cell potential can bring a new approach for the different application areas in the electrochemical energy storage. 相似文献