Polymerization of methyl methacrylate by tri-n-butylborane in the presence of amino acid esters

The polymerization of methyl methacrylate by tri-n-butylborane in the presence of amino acid esters was investigated. The binary systems of tri-n-butylborane and amino esters were found to be more effective for initiating the polymerization than tri-n-butylborane alone. Co-catalytic effects of amino acid esters were in the order: tyrosinate > glutamate > aspartate ? phenyl alaninate > serinate > glycinate. The rate of polymerization in a mixture of dimethylsulphoxide and toluene was proportional to the square root of the concentration of the initiator system, to the monomer concentration, and to the concentration of dimethylsulphoxide in the solvent. The overall energy of activation was estimated to be 4.6 kcal/mol for the tri-n-butylborane/methyl tyrosinate system. Copolymerization curves gave a typical free-radical character.     

Textile‐surface interfacial asymmetric polymerization

This research demonstrated that polymerization of aniline on cellulose produces chiroptically active composites. Polymerization of aniline in the presence of cotton fibers consisting of chiral cellulose are performed to prepare a polyaniline (PANI)/cotton composite. The polymerization is conducted at the cotton interface. The resultant PANI/cotton composite shows chiroptical activity elucidated with diffuse reflectance circular dichroism. In this reaction, textile‐surface interfacial asymmetric polymerization is performed with imprinting of chiral structure from the cotton as a natural chiroptically active polymer to the PANI. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 41118.     

Study on Heat Transfer and Flow Characteristic Under Phase-Change Process of an Acoustically Levitated Droplet

Acoustic levitation is one of the levitation technique which is expected to be used for analytical chemistry and manufacturing new materials. Thus, it is important to gather the knowledge about acoustically levitated droplet. The purpose of this study is to investigate the heat transfer and flow behavior under phase change process of an acoustically levitated droplet. The following results were obtained from experiments. Evaporation process and external flow structure of the levitated droplet is visualized by a high speed camera and it is found that they differ by the type of fluid. Toroidal vortices are observed near the surface of the ethanol solution droplet. Heat transfer coefficient is estimated from the volume change and temperature gradient. It is substantially higher than that estimated by the existing experimental correlation.     

III-V complementary metal-oxide-semiconductor electronics on silicon substrates

One of the major challenges in further advancement of III-V electronics is to integrate high mobility complementary transistors on the same substrate. The difficulty is due to the large lattice mismatch of the optimal p- and n-type III-V semiconductors. In this work, we employ a two-step epitaxial layer transfer process for the heterogeneous assembly of ultrathin membranes of III-V compound semiconductors on Si/SiO(2) substrates. In this III-V-on-insulator (XOI) concept, ultrathin-body InAs (thickness, 13 nm) and InGaSb (thickness, 7 nm) layers are used for enhancement-mode n- and p- MOSFETs, respectively. The peak effective mobilities of the complementary devices are ～1190 and ～370 cm(2)/(V s) for electrons and holes, respectively, both of which are higher than the state-of-the-art Si MOSFETs. We demonstrate the first proof-of-concept III-V CMOS logic operation by fabricating NOT and NAND gates, highlighting the utility of the XOI platform.     

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors

As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ~2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ~820 cm(2)/(V s) for holes with a subthreshold swing of ~130 mV/decade. The results present an important advance in the field of III-V electronics.     

pH-dependent network formation of quantum dots and fluorescent quenching by Au nanoparticle embedding

A simple approach to the creation of colloidal assemblies is in high demand for the development of functional devices. Here, we present the preparation of CdTe-QD (quantum dot) networks in as little as 1 day simply by pH modification without the use of oxidants. The QD network was tractable in water and casting from a droplet produced a porous networked film on both hydrophobic and hydrophilic solid substrates. Further, we found that citrate-protected gold nanoparticles (AuNPs, d = 5 nm) could be incorporated into the QD networks to afford a QD/Au composite network, and that the fluorescence from the QDs was largely decreased by the addition of a small proportion of AuNPs (QD:AuNP = 99.4:0.6), probably due to the efficient charge transfer through the network. These data indicate that our method is suitable for application to the creation of metal/QD hybrid materials that can be integrated into wet-based processes.