Hot Electron Relaxation in Ferromagnetic Metals: Memory Function Approach

Journal of Superconductivity and Novel Magnetism - This study leads to the investigation of the non-equilibrium electron relaxation in ferromagnetic metals. Here we consider the relaxation of...     

Phonon engineering in carbon nanotubes by controlling defect concentration

Outstanding thermal transport properties of carbon nanotubes (CNTs) qualify them as possible candidates to be used as thermal management units in electronic devices. However, significant variations in the thermal conductivity (κ) measurements of individual CNTs restrict their utilizations for this purpose. In order to address the possible sources of this large deviation and to propose a route to solve this discrepancy, we systematically investigate the effects of varying concentrations of randomly distributed multiple defects (single and double vacancies, Stone-Wales defects) on the phonon transport properties of armchair and zigzag CNTs with lengths ranging between a few hundred nanometers to several micrometers, using both nonequilibrium molecular dynamics and atomistic Green's function methods. Our results show that, for both armchair and zigzag CNTs, κ converges nearly to the same values with different types of defects, at all lengths considered in this study. On the basis of the detailed mean free path analysis, this behavior is explained with the fact that intermediate and high frequency phonons are filtered out by defect scattering, while low frequency phonons are transmitted quasi-ballistically even for several micrometer long CNTs. Furthermore, an analysis of variances in κ for different defect concentrations indicates that defect scattering at low defect concentrations could be the source of large experimental variances, and by taking advantage of the possibility to create a controlled concentration of defects by electron or ion irradiation, it is possible to standardize κ with minimizing the variance. Our results imply the possibility of phonon engineering in nanostructured graphene based materials by controlling the defect concentration.     

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO₂, GeO₂, Al₂O₃, Si₃N₄, and Ge₃N₄. Their important polymorphs are considered which are for SiO₂: α-quartz, α- and β-cristobalite and stishovite, for GeO₂: α-quartz, and rutile, for Al₂O₃: α-phase, for Si₃N₄ and Ge₃N₄: α- and β-phases. This work constitutes a comprehensive account of both electronic structure and the elastic properties of these important insulating oxides and nitrides obtained with high accuracy based on density functional theory within the local density approximation. Two different norm-conserving ab initio pseudopotentials have been tested which agree in all respects with the only exception arising for the elastic properties of rutile GeO₂. The agreement with experimental values, when available, are seen to be highly satisfactory. The uniformity and the well convergence of this approach enables an unbiased assessment of important physical parameters within each material and among different insulating oxide and nitrides. The computed static electric susceptibilities are observed to display a strong correlation with their mass densities. There is a marked discrepancy between the considered oxides and nitrides with the latter having sudden increase of density of states away from the respective band edges. This is expected to give rise to excessive carrier scattering which can practically preclude bulk impact ionization process in Si₃N₄ and Ge₃N₄.     

Simple methods for segmentation and measurement of diabetic retinopathy lesions in retinal fundus images

Diabetic retinopathy (DR) is one of the most important complications of diabetes mellitus, which causes serious damages in the retina, consequently visual loss and sometimes blindness if necessary medical treatment is not applied on time. One of the difficulties in this illness is that the patient with diabetes mellitus requires a continuous screening for early detection. So far, numerous methods have been proposed by researchers to automate the detection process of DR in retinal fundus images. In this paper, we developed an alternative simple approach to detect DR. This method was built on the inverse segmentation method, which we suggested before to detect Age Related Macular Degeneration (ARMDs). Background image approach along with inverse segmentation is employed to measure and follow up the degenerations in retinal fundus images. Direct segmentation techniques generate unsatisfactory results in some cases. This is because of the fact that the texture of unhealthy areas such as DR is not homogenous. The inverse method is proposed to exploit the homogeneity of healthy areas rather than dealing with varying structure of unhealthy areas for segmenting bright lesions (hard exudates and cotton wool spots). On the other hand, the background image, dividing the retinal image into high and low intensity areas, is exploited in segmentation of hard exudates and cotton wool spots, and microaneurysms (MAs) and hemorrhages (HEMs), separately. Therefore, a complete segmentation system is developed for segmenting DR, including hard exudates, cotton wool spots, MAs, and HEMs. This application is able to measure total changes across the whole retinal image. Hence, retinal images that belong to the same patients are examined in order to monitor the trend of the illness. To make a comparison with other methods, a Na?ve Bayes method is applied for segmentation of DR. The performance of the system, tested on different data sets including various qualities of retinal fundus images, is over 95% in detection of the optic disc (OD), and 90% in segmentation of the DR.     

CVD synthesis and characterization of thin Mo2C crystals

In this study, we present an investigation on the growth of thin Mo₂C crystals via chemical vapor deposition using CH₄. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy(AFM), and Raman spectroscopy studies show that the morphology and the thickness of Mo₂C crystals are strongly affected by the impurities in the system, the thickness of the copper substrate, and the graphene presence on Cu surface prior to Mo₂C formation. Our studies show that during the CVD process, orthorhombic Mo₂C crystals grow along the [100] direction on two different regions: directly on Cu surface or on graphene covered regions. Mo₂C crystals that form on graphene are found to be thinner and less defective compared to the ones formed on the Cu surface. This is attributed to graphene acting as an additional diffusion barrier for Mo atoms diffusing through the copper. In addition to the graphene beneath the Mo₂C crystal, Raman studies indicate that graphene may grow also on top of the Mo₂C crystal, forming a graphene/Mo₂C/graphene sandwich structure which may offer interesting properties for electronic applications.     

Novel high-K inverse silver oxide phases of , , , and their alloys

The recently reported inverse silver oxide phase of SiO₂ possesses a high dielectric constant as well as lattice constant compatibility to Si. We explore the closely related oxides, GeO₂, SnO₂ with the same inverse silver oxide structure using ab initio density functional theory within the local density approximation (LDA). According to the phonon dispersion curves, both these structures are computed to be unstable. On the other hand, their alloys Si_0.5Ge_0.5O₂, Si_0.5Sn_0.5O₂, and Ge_0.5Sn_0.5O₂ are stable with higher dielectric constants than that of SiO₂ in the same phase. Their first-principles elastic constants, electronic band structures and phonon dispersion curves have been obtained with high precision.