Synthesis of large-scale atomic-layer SnS<Subscript>2</Subscript> through chemical vapor deposition

Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics.Monolayer SnS2,with a band gap of ～2.6 eV,has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin.Till date,there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor.Here,we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity.In addition,the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time.Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers.The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150％,suggesting promise for optoelectronic applications.     

Mobility of carbon nanotubes in high electric fields

The influence of electric fields on carbon nanotubes is experimentally demonstrated. Alignment of nanotubes along field lines, directed motion of nanotubes between electrodes separated by several thousand micrometers, and impressive solid-state actuation behavior of nanotube-embedded structures are demonstrated, taking into account the polarization and charging of the nanotubes. These effects are reported for long strands of nanotubes, nanotubes dispersed on substrates, and nanotube-embedded polymer strips. The relative magnitude of the field responsible for polarization and directed motion was found to be dependent on the morphology of the nanotubes used. These observations may foreshadow novel electromechanical applications for nanotube elements.     

Flow-induced planar assembly of parallel carbon nanotubes and crossed nanotube junctions

We report the in-situ assembly of carbon nanotubes by chemical vapor deposition of hydrocarbon precursor (a solution of ferrocene dissolved in isopropyl alcohol). We utilized the vapor stream inside the reaction chamber to comb carbon nanotubes along the same direction and obtained two-dimensional (planar) assembly of nanotubes with tunable distributions. When the carbon source was flowing at a relatively higher rate of approximately 0.2 ml/min, most of nanotubes were driven along the vapor flow direction during their growth process and formed a thin freestanding mat featured with a parallel arrangement, whereas a lower flowing rate (approximately 0.05 ml/min) only resulted in random spider-web structures consisting of crossed nanotube junctions with a variety of configurations (e.g., "+", "Y", "T" shapes and twists). The measured direction-dependent electrical resistance of these two assemblies was in agreement with respective structures, which was anisotropic for parallel nanotubes and nearly isotropic for random networks. Such large-area planar carbon nanotube arrays with controlled orientation and various junction configurations will facilitate the design and fabrication of electronic and mechanical devices.     

Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap

Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys Mo_x W_1?x S_2y Se_{2(1?y )} is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.     

Reversible Formation of g‐C3N4 3D Hydrogels through Ionic Liquid Activation: Gelation Behavior and Room‐Temperature Gas‐Sensing Properties

Many unique properties arise when the 3D stacking of layered materials is disrupted, originating nanostructures. Stabilization, and further reorganization of these individual layers into complex 3D structures, can be essential to allow these properties to persist in macroscopic systems. It is demonstrated that a simple hydrothermal process, assisted by ionic liquids (ILs), can convert bulk g‐C₃N₄ into a stable hydrogel. The gelation occurs through delamination of the layered structure, driven by particular interactions between the IL and the carbon nitride sheets, forming an amphiphilic foam‐like network. This study employs spectroscopic and computational tools to unravel the gelation mechanism, and provides a rational approach toward the stabilization of 2D materials in hydrogels. The solution‐processable hydrogels can also be used as building blocks of complex devices. Chemiresistive gas sensors employing g‐C₃N₄ 3D hydrogels exhibit superior response at room temperature, enabling effective gas sensing under low power conditions.     

Gold Nanoparticles and g‐C3N4‐Intercalated Graphene Oxide Membrane for Recyclable Surface Enhanced Raman Scattering

Toxic organic pollutants in the aquatic environment cause severe threats to both humans and the global environment. Thus, the development of robust strategies for detection and removal of these organic pollutants is essential. For this purpose, a multifunctional and recyclable membrane by intercalating gold nanoparticles and graphitic carbon nitride into graphene oxide (GNPs/g‐C₃N₄/GO) is fabricated. The membranes exhibit not only superior surface enhanced Raman scattering (SERS) activity attributed to high preconcentration ability to analytes through π–π and electrostatic interactions, but also excellent catalytic activity due to the enhanced electron–hole separation efficiency. These outstanding properties allow the membrane to be used for highly sensitive detection of rhodamine 6G with a limit of detection of 5.0 × 10^?14m and self‐cleaning by photocatalytic degradation of the adsorbed analytes into inorganic small molecules, thus achieving recyclable SERS application. Furthermore, the excellent SERS activity of the membrane is demonstrated by detection of 4‐chlorophenol at less than nanomolar level and no significant SERS or catalytic activity loss was observed when reusability is tested. These results suggest that the GNPs/g‐C₃N₄/GO membrane provides a new strategy for eliminating traditional, single‐use SERS substrates, and expands practical SERS application to simultaneous detection and removal of environmental pollutants.     

Synthesis of Millimeter‐Scale Transition Metal Dichalcogenides Single Crystals

The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe₂ layers is reported, in which the nucleation density can be reduced from 10⁵ to 25 nuclei cm^?2, leading to millimeter‐scale MoSe₂ single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe₂ films with well‐defined stacking orientation can also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm² V^?1 s^?1, for back‐gated MoSe₂ transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter‐scale WSe₂ single crystals.     

Effect of Oxygen Adsorbates on Terahertz Emission Properties of Various Semiconductor Surfaces Covered with Graphene

We have studied coherent terahertz (THz) emission from graphene-coated surfaces of three different semiconductors—InP, GaAs, and InAs—to provide insight into the influence of O₂ adsorption on charge states and dynamics at the graphene/semiconductor interface. The amplitude of emitted THz radiation from graphene-coated InP was found to change significantly upon desorption of O₂ molecules by thermal annealing, while THz emission from bare InP was nearly uninfluenced by O₂ desorption. In contrast, the amount of change in the amplitude of emitted THz radiation due to O₂ desorption was essentially the same for graphene-coated GaAs and bare GaAs. However, in InAs, neither graphene coating nor O₂ adsorption/desorption affected the properties of its THz emission. These results can be explained in terms of the effects of adsorbed O₂ molecules on the different THz generation mechanisms in these semiconductors. Furthermore, these observations suggest that THz emission from graphene-coated semiconductors can be used for probing surface chemical reactions (e.g., oxidation) as well as for developing O₂ gas sensor devices.