Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

Technical Physics Letters - The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been...     

Electrical properties of InAs-SiO<Subscript>2</Subscript>-In<Subscript>2</Subscript>O<Subscript>3</Subscript> MIS structures with a modified interface

The effect of composition of the electrolyte used in producing a thin anodic oxide layer at the surface of a semiconductor substrate on the electrical properties of the InAs-SiO₂-In₂O₃ metal-insulator-semiconductor structures is studied. It is shown that introduction of ammonium fluoride into the electrolyte results in the formation of an interface with the density of surface states below 5 × 10¹⁰ cm^?2 eV^?1, the built-in charge (4–5 × 10¹¹ cm^?2, and the maximum relaxation time of the surface potential.     

Fast IR spectrograph (0.5–3.0 μm) based on a hybrid 1 × 384 InAs module

A design and parameters of the IR spectrograph based on an MS2004I monochromator-spectrograph and a hybrid microcircuit of a one-dimensional 1 × 384 InAs focal plane array for registration of fast processes (the registration time from 0.2 ms) are presented. The obtained spectral resolution is 0.3 nm/element at a wavelength of 1.7 μm. The wavelength range registered in a fixed position of the diffraction grating at this wavelength is 118 nm.     

The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

Technical Physics Letters - Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of...     

Effect of Oxygen and Fluorine Absorption on the Electronic Structure of the InSb(111) Surface

Semiconductors - The binding energy of oxygen and fluorine on the InSb(111) surface is investigated as a function of the termination of the latter using the projector augmented-wave method. It is...     

Multielement hybrid IR FPA based on charge-injected devices: Part II. Thermography systems with InAs elements

Results of experimental investigation of thermography systems based on InAs CID elements of line and matrix hybrid modules (a thermal imager and IR microscope) are presented. Owing to a high time stability, in the short-wave IR range, the implemented thermography systems have a temperature resolution of ～(4–8) mK for an effective frame frequency of 1–10 Hz.     

Compact Amplitude Electro-Optic Modulator Based on Chromophore-Containing Polyimides

This paper describes the development and investigation of compact waveguide electrooptic modulators using original synthesized chromophore-containing polyimides with covalently attached commercial DR-13 dye. Fully polymer planar electro-optic structures with phase-polarization and amplitude modulators in the form of a Mach–Zehnder interferometer were developed and implemented. The characteristics of the developed modulators at a wavelength of 1.3 μm were investigated, and a half-wave voltage of 24 V was achieved with a 1.3 cm length of the active part of the modulator.     

Phase composition of thin oxide films on InSb

Two methods of phase analysis for solids with complex compositions have been developed in our previous investigations.The first method is thermodynamic analysis which enables a phase diagram to be plotted and by means of this the spatial distribution of phases as a result of chemical interactions between two different solids at an interface may be predicted.The second method is cyclic voltammetry using carbon paste electrodes; with this method it is possible to analyse the phase composition of small objects, e.g. thin (about 0.01 μm) films. The limit of detection of phases by this method is about 10¹⁵ cm^-3, i.e. about two orders of magnitude lower than that of modern expensive Auger electron spectroscopy, electron spectroscopy for chemical analysis and other surface analysis methods.Both methods were applied to the InSb/native oxide system. Using the first method three alternative ternary In-Sb-O diagrams were constructed and the experimental data obtained with the second method permitted us to select the most probable diagram.Our results showed that thin (about 0.1 μm) native oxide films on InSb have multilayer structures in which each layer has a different phase composition. When the oxidation occurs under quasi-equilibrium conditions the phase compositions from the InSb surface to the top of the film are as follows: I, In₂O₃+Sb; II, In₂O₃+Sb₂O₃+Sb; III, In₂O₃+Sb₂O₄; IV, InSbO₄. However, when the In-Sb-O system is far from equilibrium during oxidation, unstable phase complexes such as Sb₆O₁₃+Sb₂O₃ or In₂O₃+Sb₂O₅ may be observed; films obtained by anodic oxidation of InSb in 0.1 M KOH are an example of this situation.     

High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

Technical Physics Letters - Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure....