Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.     

Duration of spinal anaesthesia is determined by the partition coefficient of local anaesthetic

We have compared the duration of motor block produced by four local anaesthetics administered into a chronically implanted subarachnoid catheter in rabbits. Each group (n = 6) received four different doses of amethocaine, bupivacaine, lignocaine or procaine, and the duration of the resulting motor block was assessed. Dose-response curves were plotted for each drug. As a measure of activity of the anaesthetics, we used the dose of each drug required to produce block of 60-min duration (D60 min) and the correlation between D60 min and different drug properties was examined. An inverse linear correlation (r = 0.995; P < 0.01) was observed between log D60 min and the log of the partition coefficient of the local anaesthetics. No correlation was found between the effect and degree of protein binding, pKa or molecular weight. These results suggest that, in spinal anaesthesia, the partition coefficient could be used as a predictor of the duration of anaesthetic action.     

Aortic valve papillary fibroelastoma. A diagnosis by transthoracic echocardiography

Cardiac papillary fibroelastomas are unusual, frond-like growths typically found on cardiac valves, diagnosed incidentally on autopsy or cardiac surgery, but rarely during life. We report a rare case of an aortic valve papillary fibroelastoma detected by transthoracic echocardiography and confirmed by histologic study.     

The hypersonic environment: Required operating conditions and design challenges

Hypersonic flight powered by airbreathing engines offers the potential for faster response time at long ranges, and reduced cost for access-to-space. In the present paper the operating environment of typical hypersonic vehicles are discussed, including results for the radiation equilibrium wall temperature of external vehicle surfaces and the flow properties through three sample engines spanning the range of hydrocarbon-fueled Mach 4-8 flight and hydrogen-fueled flight at speeds up to Mach 17. Flow conditions at several locations through the sample engines were calculated to provide indications of the required operating flow environment. Additional system consideration such a seals, joints, vehicle integration and in-service engineering are addressed.     

The relationship between bioelectrical impedance phase angle and subjective global assessment in advanced colorectal cancer

Background  

Bioelectrical Impedance (BIA) derived phase angle is increasingly being used as an objective indicator of nutritional status in advanced cancer. Subjective Global Assessment (SGA) is a subjective method of nutritional status. The objective of this study was to investigate the association between BIA derived phase angle and SGA in advanced colorectal cancer.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance