THE USE OF MeV PROTON NON-RUTHERFORD ELASTIC BACKSCATTERING FOR THE ANALYSIS OF LOW Z ELEMENTS

The MeV proton non- Rutherford elastic backscattering (PEBS) has been used to measure a variety of low Z element- containing samples including thick SiC film, N implanted stainless steel, thin films interface (Ag on Cu) and very deep (4μ m) SOI structure by high energy oxygen implantation. It is demonstrated that by using the significant enhancement of cross sections for low Z elements and selecting the proper energy region of the excitation curves both the sensitivities for detecting low Z elements and the accessible depth of the PEBS technique are remarkablely improved over the ordinary RBS method. The disadvantages of the PEBS as compared with RBS as well as high energy He elastic backscattering (HeEBS) are also discussed.     

用高斯与劳仑兹卷积分析核能级宽度

一定能量的质子轰击铝靶,可产生共振反应而形成~(28)Si的激发态,其退激时放出的γ射线是劳仑兹分布讯号,它反映激发态的能级总宽度Γ。用γ能谱仪测量劳仑兹分布讯号时,实际上测得的能谱应是劳仑兹分布讯号与仪器特征函数的卷积,通常认为仪器的响应是高斯分布。所以,测得的能谱是高斯与劳仑兹的卷积,这个卷积就是Voigt积分。用最小二乘