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Despeisse M. Jarron P. Anghinolfi F. Tiuraniemi S. Osmic F. Riedler P. Kluge A. Ceccucci A. 《IEEE transactions on nuclear science》2009,56(2):375-381
Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 muW per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in high energy physics, bio-technologies or medical imaging. 相似文献
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Boccard M Battaglia C Hänni S Söderström K Escarré J Nicolay S Meillaud F Despeisse M Ballif C 《Nano letters》2012,12(3):1344-1348
The challenge for all photovoltaic technologies is to maximize light absorption, to convert photons with minimal losses into electric charges, and to efficiently extract them to the electrical circuit. For thin-film solar cells, all these tasks rely heavily on the transparent front electrode. Here we present a multiscale electrode architecture that allows us to achieve efficiencies as high as 14.1% with a thin-film silicon tandem solar cell employing only 3 μm of silicon. Our approach combines the versatility of nanoimprint lithography, the unusually high carrier mobility of hydrogenated indium oxide (over 100 cm(2)/V/s), and the unequaled light-scattering properties of self-textured zinc oxide. A multiscale texture provides light trapping over a broad wavelength range while ensuring an optimum morphology for the growth of high-quality silicon layers. A conductive bilayer stack guarantees carrier extraction while minimizing parasitic absorption losses. The tunability accessible through such multiscale electrode architecture offers unprecedented possibilities to address the trade-off between cell optical and electrical performance. 相似文献
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Grégory Bugnon Gaetano Parascandolo Thomas Söderström Peter Cuony Matthieu Despeisse Simon Hänni Jakub Holovský Fanny Meillaud Christophe Ballif 《Advanced functional materials》2012,22(17):3665-3671
To further lower production costs and increase conversion efficiency of thin‐film silicon solar modules, challenges are the deposition of high‐quality microcrystalline silicon (μc‐Si:H) at an increased rate and on textured substrates that guarantee efficient light trapping. A qualitative model that explains how plasma processes act on the properties of μc‐Si:H and on the related solar cell performance is presented, evidencing the growth of two different material phases. The first phase, which gives signature for bulk defect density, can be obtained at high quality over a wide range of plasma process parameters and dominates cell performance on flat substrates. The second phase, which consists of nanoporous 2D regions, typically appears when the material is grown on substrates with inappropriate roughness, and alters or even dominates the electrical performance of the device. The formation of this second material phase is shown to be highly sensitive to deposition conditions and substrate geometry, especially at high deposition rates. This porous material phase is more prone to the incorporation of contaminants present in the plasma during film deposition and is reported to lead to solar cells with instabilities with respect to humidity exposure and post‐deposition oxidation. It is demonstrated how defective zones influence can be mitigated by the choice of suitable plasma processes and silicon sub‐oxide doped layers, for reaching high efficiency stable thin film silicon solar cells. 相似文献
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Simon Hnni Grgory Bugnon Gaetano Parascandolo Mathieu Boccard Jordi Escarr Matthieu Despeisse Fanny Meillaud Christophe Ballif 《Progress in Photovoltaics: Research and Applications》2013,21(5):821-826
This short communication highlights our latest results towards high‐efficiency microcrystalline silicon single‐junction solar cells. By combining adequate cell design with high‐quality material, a new world record efficiency was achieved for single‐junction microcrystalline silicon solar cell, with a conversion efficiency of 10.69%, independently confirmed at ISE CalLab PV Cells. Such significant conversion efficiency could be achieved with only 1.8 µm of Si. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
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Battaglia C Escarré J Söderström K Erni L Ding L Bugnon G Billet A Boccard M Barraud L De Wolf S Haug FJ Despeisse M Ballif C 《Nano letters》2011,11(2):661-665
We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tandem junction cells. Excellent light incoupling results in a remarkable summed short-circuit current density of 25.9 mA/cm(2) for amorphous top cell and microcrystalline bottom cell thicknesses of only 250 and 1100 nm, respectively. As efforts to maximize light harvesting continue, our study validates nanoimprinting as a versatile tool to investigate nanophotonic effects of a large variety of nanostructures directly on device performance. 相似文献
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F. Meillaud A. FeltrinM. Despeisse F-J. HaugD. Dominé M. PythonT. Söderström P. CuonyM. Boccard S. NicolayC. Ballif 《Solar Energy Materials & Solar Cells》2011,95(1):127-130
High conversion efficiency for (amorphous/microcrystalline) "micromorph" tandem solar cells requires both a dedicated light management, to keep the absorber layers as thin as possible, and optimized growth conditions of the microcrystalline silicon (μc-Si:H) material. Efficient light trapping is achieved here by use of textured front and back contacts as well as by implementing an intermediate reflecting layer (IRL) between the individual cells of the tandem. This paper discusses the latest developments of IRLs at IMT Neuchâtel: SiOx based for micromorphs on glass and ZnO based IRLs for micromorphs on flexible substrates were successfully incorporated in micromorph tandem cells leading to high, matched, current above 13.8 mA/cm2 for p-i-n tandems. In n-i-p configuration, asymmetric intermediate reflectors were employed to achieve currents of up to 12.5 mA/cm2. On glass substrates, initial and stabilized efficiencies exceeding 13% and 11%, respectively, were thus obtained on 1 cm2 cells, while on plastic foils with imprinted gratings, 11.2% initial and 9.8% stable efficiency could be reached. Recent progress on the development of effective front and back contacts will be described as well. 相似文献
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G. Bugnon T. SöderströmS. Nicolay L. DingM. Despeisse A. HedlerJ. Eberhardt C. WachtendorfC. Ballif 《Solar Energy Materials & Solar Cells》2011,95(8):2161-2166
The use of zinc oxide (ZnO) based intermediate reflector (ZIR) in micromorph solar cells using low pressure chemical vapor deposition (LPCVD) was investigated. The influences of deposition temperature and dopant gas concentration on grain size and lateral electrical conductivity measurements are presented. Further ZIR deposition conditions were then directly evaluated in micromorph solar cell devices. Their electrical performances were compared to reference cells and cells incorporating silicon oxide based intermediate reflector. It is shown that both reduced ZIR deposition temperature and increased total flow rate allow for better performing devices with increased shunt resistance, as further supported by lock-in thermography shunt imaging. Relative micromorph efficiency increase of above 7% is shown with thin ZnO layers, along with absence of loss or even small increase of total current in the whole structure compared to cells without intermediate reflector. 相似文献
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Despeisse M. Anelli G. Jarron P. Kaplon J. Moraes D. Nardulli A. Powolny F. Wyrsch N. 《IEEE transactions on nuclear science》2008,55(2):802-811
Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pulsed laser. Results obtained with a TFA detector based on an ASIC integrating 5 ns peaking time pre-amplifiers are presented. Direct detection of 10 to 50 keV electrons and 5.9 keV X-rays with the detectors are then shown to understand the potential and the limitations of this technology for radiation detection. 相似文献
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