Design aspects of MOS-controlled thyristor elements: technology,simulation, and experimental results

2.5-kV thyristor devices have been fabricated with integrated MOS controlled n⁺-emitter shorts and a bipolar turn-on gate using a p-channel DMOS technology. Square-cell geometries with pitch variations ranging from 15 to 30 μm were implemented in one- and two-dimensional arrays with up to 20000 units. The impact of the cell pitch on the turn-off performance and the on-state voltage was studied for arrays with constant cathode area as well as for single-cell structures. By realizing MOS components with submicrometer channel lengths, scaled single cells are shown to turn off with current densities of several kiloamperes per square centimeter at a gate bias of 5 V. In the case of multi-cell ensembles, turn-off performance is limited due to inhomogeneous current distribution. Critical process parameters as well as the device behavior were optimized through multidimensional numerical simulation     

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Low-temperature (LT) buffer-layer techniques were employed to improve the crystalline quality of ZnO films grown by molecular-beam epitaxy (MBE). Photoluminescence (PL) spectra show that CdO, as a hetero-buffer layer with a rock-salt structure, does not improve the quality of ZnO film grown on top. However, by using ZnO as a homo-buffer layer, the crystalline quality can be greatly enhanced, as indicated by PL, atomic force microscopy (AFM), x-ray diffraction (XRD), and Raman scattering. Moreover, the buffer layer grown at 450°C is found to be the best template to further improve the quality of top ZnO film. The mechanisms behind this result are the strong interactions between point defects and threading dislocations in the ZnO buffer layer.     

Experience with the universal intermediate language janus

Janus is a symbolic language intended for use as an intermediate language in the transportation of software. Since its initial design four years ago, it has been used to implement a portable Pascal compiler, in the design of an Algol 68 compiler, and to realize a portable package of mathematical routines. These experiences, together with a critical re-evaluation of the design criteria, have led to some modification of the specifications of Janus and an increased confidence in the viability of the approach. They have also indicated some problems yet to be solved. This paper reviews the significant lessons which we have learned, and quotes some results which support our confidence.     

Sweet tooth demonstrated: Individual differences in preference for both sweet foods and foods highly sweetened.

A total of 9 women and 9 men, aged 19–40 years, rated the sweetness of samples of chocolate, lime drink, and tomato soup relative to their personally ideal levels of sweetness for each food, with the conditions of each test session designed to eliminate various sources of bias. The method yielded precise estimates of the individual's most preferred concentration of sugar and of his or her tolerance of deviations from ideal. This linear precision allowed assessment of the degree to which the ideal food sugar level was a personal characteristic. We found that individuals differed significantly in peak-preferred levels of sugar, both generally across foods and with some variation relatively among foods. Also, the peak sweetness preferences for the three foods correlated significantly with several rated choices of sweet foods over nonsweet foods. This is evidence for the full construct of a sweet tooth—both a strong liking for sweet foods and a liking for strongly sweetened foods. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Single-walled carbon nanotube thin film emitter-detector integrated optoelectronic device

We use the suspended single-walled carbon nanotube (SWNT) thin film technology to assemble the first prototype of an integrated optoelectronic SWNT device, a SWNT optocoupler in which a SWNT emitter and a SWNT detector couple two electrical circuits by the transmission of a signal through the optical channel. Our experiments show that the integrated SWNT emitter/SWNT detector is an ideal couple in which the broadband wavelength character of the emission matches the broadband detection capabilities.     

Thermal conductivity measurements of semitransparent single-walled carbon nanotube films by a bolometric technique

We introduce a new technique for measurement of the thermal conductivity of ultrathin films of single-walled carbon nanotubes (SWNTs) utilizing IR radiation as heat source and the SWNT film as thermometer. The technique is applied to study the temperature dependence of the thermal conductivity of an as-prepared SWNT film obtained in the electric arc discharge process and a film of purified SWNTs prepared by vacuum filtration. The interplay between thermal and electrical transport in SWNT networks is analyzed in relation to the type of intertube junctions and the possibility of optimizing the thermal and electrical properties of SWNT networks for specific applications is discussed.     

Bone cell proliferation on carbon nanotubes

We explored the use of carbon nanotubes (CNTs) as suitable scaffold materials for osteoblast proliferation and bone formation. With the aim of controlling cell growth, osteosarcoma ROS 17/2.8 cells were cultured on chemically modified single-walled (SW) and multiwalled (MW) CNTs. CNTs carrying neutral electric charge sustained the highest cell growth and production of plate-shaped crystals. There was a dramatic change in cell morphology in osteoblasts cultured on MWNTs, which correlated with changes in plasma membrane functions.     

Aryl functionalization as a route to band gap engineering in single layer graphene devices

Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that nonsuspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ～0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a semiconductor in which transport occurs via thermal activation over a transport gap ～80 meV from 4 to 300 K. This noninvasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.