介孔分子筛SBA-15表面的胺基功能化

采用γ-胺丙基三甲氧基硅烷与表面硅羟基的反应,对介孔分子筛SBA-15进行了有机胺功能化,并对其进行了表征.XRD、SEM、比表面积测定、元素分析、TG和FT-IR的测定结果均表明,SBA-15表面成功地接枝上了有机胺功能基团,而六方结构特征基本保持.     

Dispersion-relation-preserving FDTD algorithms for large-scale three-dimensional problems

We introduce dispersion-relation-preserving (DRP) algorithms to minimize the numerical dispersion error in large-scale three-dimensional (3D) finite-difference time-domain (FDTD) simulations. The dispersion error is first expanded in spherical harmonics in terms of the propagation angle and the leading order terms of the series are made equal to zero. Frequency-dependent FDTD coefficients are then obtained and subsequently expanded in a polynomial (Taylor) series in the frequency variable. An inverse Fourier transformation is used to allow for the incorporation of the new coefficients into the FDTD updates. Butterworth or Chebyshev filters are subsequently employed to fine-tune the FDTD coefficients for a given narrowband or broadband range of frequencies of interest. Numerical results are used to compare the proposed 3D DRP-FDTD schemes against traditional high-order FDTD schemes.     

起升中四腿落地式K型井架及底座的应力分析

针对在用四腿落地式K型井架在起升中井架与底座存在的问题,文章以JJ162/42-K型井架为例,采用I-DEAS有限元软件对起升过程中处于各角度时的井架及底座做了应力分析,并将其结果与两腿落地式K型井架进行了比较。分析表明,四腿落地式K型井架及底座在井架刚起升时,应力值较大,存在安全隐患。为了增强在井架起升过程中底座的安全性,建议在底座上井架2个铰支座之间加焊加强钢板,并加大井架前立柱铰支座的尺寸。     

无机高分子絮凝剂聚硫酸铁合成条件的研究

实验研究了以工业硫酸亚铁及废硫酸为原料,分别采用NaClo_3、KClO_3、H_2O_2及(o_2+NaNO_2)为氧化剂成聚硫酸铁的条件。在以(O_2+NaNO_2)为氧化剂的合成过程中,发现添加微量助催化剂(型号为HG-1、HG-2和HG-3),对提高合成速度及反应过程的稳定性具有重大作用。     

我国未来移动通信研究开发展望

本文简述了国内移动通信的发展现状与趋势，重点论述了国际上有关Beyond 3G移动通信发展动向，提出了我国发展未来移动通信的基本技术需求，概述了我国有关Beyond 3G研究计划-FuTURE计划的安排与步骤。     

离心萃取装置中硝酸羟胺还原反萃钚的研究

用十六级分离式混合—离心澄清萃取装置,在20-24℃,30-34℃,45-50℃等不同温度下进行了3B槽硝酸羟胺还原反萃钚的实验。结果表明,钚的收率均可达99.9%以上。在20-24℃时,有机相出口级附近几级的钚浓度较高,实验条件一旦波动,有可能造成钚的流失,且钚在萃取设备中有明显的积累。温度升高,14级反萃(停留时间约18min)时,钚的收率基本得到保证。     

An iterative ADI-FDTD with reduced splitting error

We present a new iterative alternating-direction-implicit finite-difference time-domain (ADI-FDTD) method. By recognizing the ADI-FDTD method as a special case of a more general iterative approach to solve the Crank-Nicolson (CN) FDTD scheme, the splitting error in ADI-FDTD can be reduced systematically. Numerical examples are used to illustrate the improved accuracy of this method.     

超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。