The World robot summit disaster robotics category – achievements of the 2018 preliminary competition

The World Robot Summit is a robot Olympics and aims to be held in a different country every four years from 2020. The concept of the Plant Disaster Prevention challenge is daily inspections, checks, and emergency response in industrial plants, and in this competition, robots must carry out these types of missions in a mock-up plant. The concept of the Tunnel Disaster Response and Recovery challenge is emergency response to tunnel disasters, and is a simulation competition whereby teams compete to show their ability to deal with disasters, by collecting information and removing debris. The Standard Disaster Robotics challenge assesses, in the form of a contest, the standard performance levels of a robot that are necessary for disaster prevention and emergency response. The World Robot Summit Preliminary Competition was held at Tokyo Big Sight in October 2018, and 36 teams participated in the Disaster Robotics Category. UGVs and UAVs contended the merits of new technology for solving complex problems, using core technologies such as mobility, sensing, recognition, performing operations, human interface, autonomous intelligence etc., as well as system integration and implementation of strategies for completing missions, gaining high-level results.     

Active sites of Cu-ZSM-5 for the decomposition of acrylonitrile

The catalytic decomposition of acrylonitrile (AN) over Cu-ZSM-5 prepared with various Cu loadings was investigated. AN conversion, during which the nitrogen atoms in AN were mainly converted to N₂, increased as Cu loading increased. N₂ selectivities as high as 90–95% were attained. X-ray diffraction measurements (XRD) and temperature-programmed reduction by H₂ (H₂-TPR) showed the existence of bulk CuO in Cu-ZSM-5 with a Cu loading of 6.4 wt% and the existence of highly dispersed CuO in Cu-ZSM-5 with a Cu loading of 3.3 wt%. Electron spin resonance measurements revealed that Cu-ZSM-5 contains three forms of isolated Cu²⁺ ions (square-planar, square-pyramidal, and distorted square-pyramidal). The H₂-TPR results suggested that in Cu-ZSM-5 with a Cu loading of 2.9 wt% and below, Cu⁺ existed even after oxidizing pretreatment. The activity of AN decomposition over Cu/SiO₂ suggested that CuO could form N₂, but, independent of the CuO dispersion, nitrogen oxides (NO_x) were formed above 350 °C. Cu⁺ and the square-pyramidal and distorted square-pyramidal forms of Cu²⁺ showed low activity for AN decomposition. Temperature-programmed desorption of NH₃ suggested that N₂ formation from NH₃ proceeded on Cu²⁺, resulting in the formation of Cu⁺. The Cu⁺ ions were oxidized to Cu²⁺ at around 300 °C. Thus, high N₂ selectivity over Cu-ZSM-5 with a wide range of temperature was probably attained by the reaction over the square-planar Cu²⁺, which can be reversibly reduced and oxidized.     

Effect of Forming Pressure on the Internal Structure of Alumina Green Bodies Examined with Immersion Liquid Technique

Green bodies prepared by compaction of alumina granules were made transparent by an immersion liquid technique, and the internal structure was characterized with an optical microscope to study the effect of forming pressure on the internal structure. Clear images obtained by the technique provide more detailed information than other existing methods for structures ranging from one to tens of micrometers. Intergranular pores were present between unfractured granules. Their sizes and concentration tended to decrease with increasing forming pressure. However, pores were clearly present even in the green body prepared at 600 MPa. A rod- and needlelike feature was also found and was concluded to correspond to a high-density region. The significance of large pores and high-density regions on processing as well as the details of the technique is discussed.     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

GABA and glutamate levels in the substantia nigra reticulata following repetitive cerebral ischemia in gerbils

Repetitive cerebral ischemia produces more severe damage than a similar single duration insult. We have previously shown that, in gerbils, damage in the substantia nigra reticulata (SNr) is seen with repetitive insults rather than a single insult. We have also shown that there is a progressive decrease in the extracellular GABA in the striatum in the days preceding such damage, speculating that a loss of GABA may be in part responsible for this damage. This study evaluates the GABA levels in the SNr in animals exposed to repetitive ischemic insults. Each animal received a total of three ischemic insults of 3-min duration at hourly intervals. In vivo microdialysis was carried out to analyze the GABA and glutamate dialysate levels on Days 1, 3, 5, 7, and 14 following the ischemic insult. In the control and treated (ischemic) animals, there was a significant increase in the GABA levels with the introduction of nipecotic acid on Days 1, 3, 5, and 14. However, on Day 7 there was a significant attenuation in the GABA response to nipecotic acid in the treated animals in comparison to the controls. The glutamate levels in the treated animals were similar to the control animals on Days 1, 3, 5, and 7. However, on Day 14 the glutamate levels were significantly lower than on previous days. Our experiments for the first time measure extracellular glutamate and GABA responses in the SNr in animals exposed to repetitive ischemic insults. Our experiments show that there is a significant decrease in the GABA concentrations at a time when ischemic damage is developing in this region. This confirms our hypothesis that a decrease in GABA may be one factor contributing to neuronal damage during the period following repetitive ischemic insults. Further, the rebound increase in GABA levels on Day 14 with a concomitant fall in glutamate levels would indicate that reparative processes are still active in the 2 weeks following the insult.     

Dependence of thin film transistor characteristics on thedeposition conditions of silicon nitride and amorphous silicon

The systematic relation between thin film transistors' (TFT's) characteristics and the deposition conditions of amorphous silicon nitride (a-SiN) films and hydrogenated amorphous silicon (a-Si:H) films is investigated. It is observed that field effect mobility μ_FE and threshold voltage V_th of the TFT's strongly depend on the deposition conditions of these films. The maximum μ_FE of 0.88 cm²/V·s is obtained for the TFT of which a-SiN film is deposited at a pressure of 85 Pa. This phenomenon is due to the variation of the interface states density between a-Si:H film and a-SiN film     

Sinterability and properties of Ti(N1−x,O x ) y -(V,Ta)C-Ni sintered alloys having a golden colour

The effect of oxygen and carbide addition on the sinterability of TiN _y (0.42<y<1)-Ni alloys, in which part of the nitrogen is replaced by oxygen was investigated. It was found that sinterability increased as the oxygen and carbide content increased, but the strength of the resultant sintered alloys was significantly reduced due to the presence of Ni₃Ti and Ti₂O₃ phases when the oxygen content exceeded 50 mol %. The sintered alloy with the highest hardness was found whenx=0.7,y=0.78 and the (V,Ta)C content was 18% by weight and this alloy was characterized by having a low density, good corrosion resistance and the colour of gold.     

Granular Reasoning Using Zooming In & Out: Part 2. Aristotle's Categorical Syllogism

The concept of granular computing is applied to Aristotle's categorical syllogism. Such kind of reasoning is called granular reasoning in this paper. For the purpose, two operations called zooming in & out are introduced to reconstruct granules of possible worlds.     

Skew simulation of a paper transferred by rubber rollers in printers

A skew of a paper transferred by rubber rollers in printers is simulated by FEM software. Effects of an imbalance of preload, an imbalance distribution of coefficient of friction and a front tension on the paper skew are investigated and how to determine the skew direction are shown. A simulation model is composed of a feed roller, a preload roller and a paper. The feed roller is rotated forcibly by a certain degree at every calculation step and a deformation, displacement and strain of the paper and rollers are calculated. A series of calculation results is shown as a motion simulation. The results show that the paper skews to the smaller preload side, to the smaller coefficient of friction side, or to the opposite side of the front tension. Further, effects of a skew prevention guide plate is simulated.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.