Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD’s) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm². Fiz. Tekh. Poluprovodn. 32, 1482–1486 (December 1998)     

The effect of unilateral destruction of the head of the caudate nucleus with kainic acid on the structure of the wakefulness-sleep cycle and the EEG in rats

The wakefulness-sleep cycle characteristics changes in Wistar line rats after unilateral lesions of the neuronal elements of the caudate nucleus head with kainic acid (at sparing the conducting ways going through this structure) were studied. It was shown that in 4 days after acid injection the share of the active wakefulness and light slow-wave sleep is significantly increased, whereas the percentage of the passive wakefulness, deep slow-wave stage, and paradoxal sleep (up to 80%) is reduced. The wakefulness-sleep cycle in rats is completely normalized on the 7th day after injection. The obtained data allow to consider the caudate nucleus as a modulator for wakefulness-sleep cycle, that is the structure involved in the motive activity regulation.     

Distribution of OH and CH Radicals in the Boundary Layer with Ethanol Combustion

The influence of free-stream turbulence on the distributions of CH and OH radicals is studied with the use of optical methods of measurements in focused beams. The data on CH concentration are obtained for the minimum level of turbulence, and the OH concentration profiles are obtained for three levels of velocity fluctuations: 1, 8, and 18. It is shown that the regions where the OH and CH radicals are observed in the laminar boundary layer are shifted from the temperature maximum toward the oxidizer zone and toward the fuel zone, respectively. The highest level of the OH concentration is close to values typical of hydrogen combustion. The root-mean-square fluctuations of velocity and the mean values of the OH concentration vary nonmonotonically along the flame.__________Translated from Fizika Goreniya i Vzryva, Vol. 41, No. 4, pp. 22–28, July–August, 2005.     

Laser deposition of gallium nitride films

Insulating c-oriented hexagonal epitaxial gallium nitride (GaN) films have been obtained by means of pulsed laser sputtering of a gallium target in nonactivated nitrogen atmosphere. The GaN films were deposited onto (0001)-oriented sapphire substrates either directly or above a ZnO buffer layer. The laser-deposited films exhibit edge photoluminescence at 370 nm.     

Study of the potential distribution in a forward-biased silicon diode using electrostatic force microscopy

Electrostatic force microscopy was used to study the potential distribution in a forward-biased epitaxial-diffused n ⁺-n-p-p ⁺ silicon diode. Distributions of potential and capacitance were determined across the cleaved surface, which intersected the layers in the diode structure. Variations in the surface potential and capacitance were preliminarily measured with a submicrometer spatial resolution and were used to determine the position and width of the n-p junction; the distribution of applied forward bias in the diode was also assessed. It is shown that an additional potential barrier for injected charge carriers may exist in the vicinity of the n ⁺-n junction in the diode under consideration. For an injection-current density exceeding 100 mA/cm², the voltage drop across this barrier becomes comparable with the voltage variations across the operating n-p junction.     

Selection of parameters of the three-dimensional recursive search algorithm in constructing displacement vector fields with the use of the hierarchical approach

Optoelectronics, Instrumentation and Data Processing - An approach to automatic determination of operation parameters of a hierarchical 3D recursive search (3DRS) algorithm is proposed and tested....     

GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques

Semiconductors - Ge photovoltaic cells based on GaAs/Ge heterostructures have been produced by a combination of metal-organic chemical-vapor deposition and Zn diffusion from the gas phase. The...     

Structurization of Coatings in the Plasma Arc Spraying Process Using B4C + (Cr,Fe)7C3-Cored Wires

Powder Metallurgy and Metal Ceramics - The structure and phase composition acquired by coatings deposited in optimum mode by the plasma arc spraying process were examined. The spraying materials...     

Cross-sectional electrostatic force microscopy of semiconductor laser diodes

The possibilities of electrostatic force microscopy in studying semiconductor device structures are considered. A study of the cross sections of a GaAlAs/GaAs laser diode demonstrated that the method yields the position and width of the n-p junction in the laser structure, the profile of the voltage drop across the layers constituting the structure, and the distribution of injected carriers in the waveguide.     

A formally based parallelization of data mining algorithms for multi-core systems

We describe a novel, systematic approach to efficiently parallelizing data mining algorithms: starting with the representation of an algorithm as a sequential composition of functions, we formally transform it into a parallel form using higher-order functions for specifying parallelism. We implement the approach as an extension of the industrial-strength Java-based library Xelopes, and we illustrate its use by developing a multi-threaded Java program for the popular naive Bayes classification algorithm. In comparison with the popular MapReduce programming model, our resulting programs enable not only data-parallel, but also task-parallel implementation and a combination of both. Our experiments demonstrate an efficient parallelization and good scalability on multi-core processors.