Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization

Journal of Materials Science - Although chalcogenide materials continue to generate considerable interest due to great potentials for various optoelectronic devices, annealing for a long time in...     

Using refined kano model and decision trees to discover learners’ needs for teaching videos

Multimedia Tools and Applications - With the advancement of technology and the spread of the COVID19 epidemic, learning can no longer only be done through face-to-face teaching. Numerous digital...     

Resource management in UAV-assisted MEC: state-of-the-art and open challenges

Wireless Networks - Unmanned aerial vehicles (UAV) have been widely used in various fields because of their high mobility and portability. At the same time, due to the rapid development of...     

魏斯氏菌的研究进展

对魏斯氏菌属的分离鉴定、生物学特性、耐酸特性、抑菌特性、产胞外多糖特性、益生特性、组学研究及其在食品与医药方面的应用进行了综述,并为魏斯氏菌属的开发利用提供了建议。     

One step from nanofiber to functional hybrid structure: Pd doped ZnO/SnO2 heterojunction nanofibers with hexagonal ZnO columns for enhanced low-temperature hydrogen gas sensing

In this paper, a novel hybrid structure of Pd doped ZnO/SnO₂ heterojunction nanofibers with hexagonal ZnO columns was one step synthesized from electrospun precursor nanofibers. Due to the synergistic effect of hexagonal ZnO, SnO₂ and Pd, the structure exhibited excellent hydrogen (H₂) gas sensing properties. At low-temperature of 120 °C, the response (R_a/R_g) to 100 ppm H₂ gas exceeded 160, the response/recovery time was only 20 s and 6 s respectively and the limit of detection was only 0.5 ppm. Meanwhile, it also had good selectivity for H₂ gas and excellent linearity. In addition, the materials were characterized by XRD, FESEM, HRTEM, XPS, and the synthesis mechanism and gas sensing mechanism were proposed.     

成分配比对稀土钨电极材料组织及力学性能影响

通过固液掺杂、等静压压制、中频烧结的方法，制备了不同的氧化镧、氧化钇、氧化锆三元掺杂成分比例的钨电极材料烧结棒材，探究了不同成分配比对样品显微组织、第二相粒子分布以及宏观力学性能的影响。结果表明，氧化镧、氧化钇、氧化锆三元复合添加能够有效改善第二相粒子在钨基体中的分布形态，降低第二相在晶界的过度富集，提高钨电极材料的综合力学性能。并且当添加成分镧、钇、锆质量比为3:1:1时，材料具有最好的综合力学性能，致密度可达96.04%，显微硬度可达549.37HV0.3，抗压强度可达3785MPa，原因是此配比下第二相粒子最为细小均匀，弥散程度最高，对基体晶粒的细化作用最好，该配比下钨基体平均晶粒尺寸达到10.3μm。