Intense blue-emitting Ca₂PO₄Cl:Eu²⁺ phosphor for near-ultraviolet converting white light-emitting diodes

A blue phosphor Ca2PO4Cl:Eu2+(CAP:Eu2+) was synthesized by solid state reaction.The Ca2PO4Cl:Eu2+ exhibited high quantum efficiency and excellent thermal stability.The luminescent intensity of Ca2PO4Cl:Eu2+ was found to be 128% under excitation at 380 nm,149% under 400 nm,and 247% under 420 nm as high as that of BaMgAl10O17:Eu2+.The optimal doping concentration was observed to 11 mol.% of CAP:Eu2+.The energy transfer between Eu2+ ions in CAP were occurred via electric multipolar interaction,and the critical transfer distance was estimated to be 1.26 nm.A mixture of blue-emitting Ca2PO4Cl:Eu2+,green-emitting(Ba,Sr)2SiO4:Eu2+ and red-emitting CaAlSiN3:Eu2+ phosphors were selected in conjunction with 400 nm chip to fabricate white LED devices.The average color-rendering index Ra and correlated color temperature(Tc) of the white LEDs were found to be 93.4 and 4590 K,respectively.The results indicated that it was a promising candidate as a blue-emitting phosphor for the near-UV white light-emitting diodes.     

State-of-the-art flash memory devices and post-flash emerging memories

Although conventional Floating gate (FG) flash memory has recently gone into the 2X nm node, the technology challenges are formidable below 20 nm. Charge-trapping (CT) devices are promising to scale beyond 20 nm but below 10 nm both CT and FG devices hold too few electrons for robust MLC (multi-level cell, or more than one bit storage per cell) storage. However, due to the simpler structure and its more robust storage (not sensitive to tunnel oxide defects since charges are stored in deep trap levels), CT i...     

Resistance switching for RRAM applications

Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (au- tomotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current u...