A new lateral MOS-gated thyristor with controlling base-current

A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P⁺ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor     

The significance of colocalization of plasminogen activator inhibitor-1 and vitronectin in hepatic fibrosis

BACKGROUND: We examined the relationships among vitronectin (VN), plasminogen activator inhibitor-1 (PAI-1), and transforming growth factor beta 1 (TGF-beta 1) in liver diseases to evaluate the presence of plasmin cascade in human hepatic fibrosis. METHODS: Blood and liver tissues were obtained from 57 patients with liver disease. Plasma VN, PAI-1 antigen, and PAI-1 activity levels were evaluated. Biopsied liver specimens were observed by light and electron microscopy after immunohistochemical staining. Morphometric analysis was performed on these specimens. RESULTS: Plasma VN and PAI-1 activity levels decreased significantly with the progression of hepatic fibrosis and were particularly marked in the liver cirrhosis group. Plasma PAI-1 antigen level increased significantly. The immunolocalization of the active form of TGF-beta became more intense with the progression of hepatic fibrosis, whereas that of the dual-stained positive areas of PAI-1 and VN (PAI-1.VN) decreased. There was a positive correlation between TGF-beta and PAI-1, whereas there was a negative correlation between TGF-beta and PAI-1.VN. Immunoelectron microscopy showed the localization of PAI-1-VN in the extracellular space around the sinusoidal cells or surface of aggregating platelets, TGF-beta mainly in Ito cells, and VN in hepatocytes near the focal necrotic area or fibrous septa. CONCLUSIONS: These findings suggest that VN and PAI-1 are related to the active form of TGF-beta and that it is possible that the plasmin cascade is present in the human liver.     

YM-32890 A and B, new types of macrolide antibiotics produced by Cytophaga sp

Two new types of macrolide antibiotics, YM-32890 A and B, have been isolated from the fermentation broth of cytophaga sp. YL-02905S. In this paper, the taxonomy of the producing strain, fermentation, isolation, structure elucidation, and biological activity of the antibiotics are reported. YM-32890 A inhibits the growth of staphylococci including a macrolide-resistant strain, but shows no antimicrobial activity against other Gram-positive, Gram-negative bacteria and yeast.     

Additives distribution and electrical properties in zinc oxide varistor prepared by a wet chemical method

Cobalt-, praseodymium-added zinc oxide varistor was prepared through a wet chemical method followed by sintering with or without calcination. Changes in grain size, compact density, additives distribution, and voltagecurrent/ capacitance-voltage relations were investigated for the characterization of the samples sintered at temperatures from 1473 to 1573 K without calcination or with calcination at 773 K for 2 h. The electrical properties were compared with nhose of samples prepared by two types of ball mill methods. The wet chemical method provided almost the same additives-distribution profile and less impurities in comparison with the ball grinding method carried out for 10–100 h. The donor concentration and the potential-barrier height for the samples were evaluated by Double Schottky Barrier Model. Addition of small amount of both cobalt and praseodymium in preparation by the wet chemical method was effective for a better nonlinearity relation between voltage and current, which has potential for a smaller sized varistor.     

A unified proposal for characteristic testing methods and figure of merit of 8‐kV/3.5‐kVA class light‐triggered thyristors

Power devices with high capability have been developed. 8‐kV/3.5‐kA‐class light‐triggered thyristors have the highest capability among power devices. These devices are used in the Kii Channel HVDC transmission system in Japan. In this paper, we report the extracted problems of conventional testing methods of 8‐kV/3.5‐kA‐class light‐triggered thyristors among manufacturers, and the proposed unified testing methods on the basis of element characteristics and operating conditions in the Kii Channel HVDC system. Furthermore, we propose a figure of merit for power devices for the practical use, and try to extract elements used at the Kii Channel HVDC system with small margins and low withstand capabilities. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 140(3): 61–70, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10024     

Superconductivity in W-containing diamond-like nanocomposite films

Superconductivity in a tungsten-containing carbon-oxide film was reported. The film with 500 nm thickness was deposited onto polycrystalline silicon oxides using chemical vapor deposition and the co-sputtering of a tungsten metal target. The bonding state of the carbon atoms and the macroscopic and microscopic crystal structure of the film were investigated by Raman spectroscopy, X-ray diffraction and transmission electron microscopy measurements. From the experimental results, we determined that this film essentially had an amorphous structure. The temperature dependence on resistivity was measured in the temperature range of 2–300 K. Resistive superconducting transition was observed at 3.8 K. The dc magnetizations were measured in the temperature range of 1.8–6.5 K. The diamagnetism resulting from a superconductive state was observed below 3.75 K, which is consistent with a resistive superconducting transition. It is thought that the finite sized clusters of the different superconductive transition temperatures cooperatively produce a macroscopic superconducting phenomenon.     

Temperature Dependence of the Raman Spectrum in Lithium Oxide Single Crystal

Temperature dependence of the Raman spectrum of lithium oxide single crystal has been measured over a temperature range of 80 to 1073 K. The frequency shift and the line width of the Raman spectrum in lithium oxide were about 531 and 4.5 cm^-1 at 80 K, respectively. At 1073 K, the frequency shift and the line width attained the values of 464 and 112 cm^-1, respectively. The strong temperature dependence of the frequency shift and line width was compared with data from some crystals with a fluorite structure.     

STM tunneling spectroscopy on high Tc superconductors

STM tunneling spectroscopy has been performed on the bulk single crystals of BiSrCaCuO (BSCCO) and the epitaxial thin films of YBaCuO (YBCO) at cryogenic temperatures. The STM images and tunneling spectra observed on the (001) surfaces can be classified into three cases; 1) Atomic image is visible. However, the tunneling spectrum shows semiconducting or smeared superconducting gap structures, depending on the tip-sample distance. 2) Clear atomic image can not be obtained. But, the tunneling spectrum shows flat bottom region with quite low zero bias conductance. 3) Tunneling spectra demonstrate gapless behavior, independent of the tip-sample separation. These observations support the quasi-2D electronic picture in whichs-wave like 2D superconducting layers are coupled with each other through the Josephson effect.     

An effect of microstructure on the interface resistance between a perovskite-type oxide electrode and yttria-stabilized zirconia

The electrode characteristics of perovskite-type oxides, La_0.6Sr_0.4CoO₃ and La_0.6Sr_0.4MnO₃, on ceria-based oxide and stabilized zirconia were analysed by the a.c. impedance method. The ionic conductivities of the electrolyte and electrode conductivities from the a.c. impedance analysis agreed with those obtained from the current interruption and d.c. four-probe methods. Two semicircles from the charge transfer and diffusion processes appeared as the electrode resistance. The relative contribution of these two processes to the overall electrode resistance strongly depended on the microstructure of the electrode. The electrode microstructure could be controlled by the dispersion medium used for the electrode slurry. The La_0.6Sr_0.4MnO₃ electrode coated with n-butyl acetate slurry exhibited the smallest electrode resistance.