A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.     

Kinetics of two-step anionic polymerization

This article deals with the kinetics of two-step anionic polymerization by way of a non-steady state method. Several molecular parameters can be evaluated using the formulae developed. A bimodal molecular weight distribution function for the resulting polymer is derived from the set of kinetic differential equations, which is in agreement with the experimental data reported.     

新的启迪

说点心里的话，建筑设计对青年人来讲是一条漫长的道路。建筑是一个载体，有精神一面，也有物质一面。有些建筑师拿着模型或未建成的设计来炒作，为了求名，生怕别人不知道。这对个人是小事，但若贻误了青年学子，那就是不可取的。     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

Reliability and performance analysis of time – space – time switching networks with multiple separated space switches

Since electronic switching systems usually require very strict reliability requirements as well as good performance objectives, we need to jointly analyse the performance and reliability of switching systems. In this paper, we compare conventional time–space–time switches with single space switches with those with multiple separated space switches, from the viewpoints of reliability and performance. We consider time–space–time switching networks which consist of N incoming time switches, i.e. one NxN space switch, two (N/2)x(N/2) space switches, and four (N/4)x(N/4) space switches. We introduce a Markov reliability model to study the effect of failures and analyse the reliability and performance of three different types of switching networks in terms of average blocking probability and the mean time to unreliable operation, as we vary the offered traffic. As a result, T–S–T switching networks with multiple separated space switches exhibit better performance and reliability than those with single space switches.     

Modeling Power Supply Noise in Delay Testing

Excessive power supply noise during test can cause overkill. This article discusses two models for supply noise in delay testing and their application to test compaction. The proposed noise models avoid complicated power network analysis, making them much faster than existing power noise analysis tools. can cause performance degradation and     

Surface charge accumulation and decay on a spacer stressed with DC voltages at atmospheric conditions

Contents Surface charge accumulation and its decay at a GIS spacer are studied at atmospheric conditions employing a two step-calibration method. The results show that the accumulation saturates within 30 minutes; the dominant mechanism of surface charge accumulation is the drift of charged particles via air, while that of the decay is surface conduction. The characteristics are similar at both polarities.

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Sättigungskonzentration und Abklingverhalten der Oberflächenladung an einem mit Gleichspannung beanspruchten Abstandshalter unter atmosphärischen Bedingungen

Übersicht Die Konzentration und das Abklingen von Oberflächenladungen an einem GIS Abstandshalter wurden unter atmosphärischen Bedingungen mit Hilfe eines zweistufigen Kalibrierungsverfahrens untersucht. Die Ergebnisse zeigen eine Sättigung der Ladungskonzentration innerhalb von 30 Minuten. Als Hauptursache der Ladungskonzentration ist die Drift geladener Teilchen in Luft anzusehen, während das Abklingen auf die Oberflächenleitung zurückzuführen ist. Ähnliche Charakteristiken ergeben sich mit beiden Polaritäten.

     

Statistical properties of out-of-frame detection schemes fordigital transmission systems

The importance of the misframe times for DS1 frame synchronization has often been addressed in designing and using network elements and mediation units. By extending the work of J. H. Eu and W. W. Rollins (1991), Markov chain first passage time analysis is used to derive higher moments of the misframe times in both random and burst error environments. This methodology is of great value in evaluating frame synchronization techniques for digital transmission systems. By experimenting with several out-of-frame detection schemes and reasonable values for bit error ratio (BER), it is shown that misframe times are always approximately exponentially distributed for all schemes     

Study on phase behavior–impact strength relationship of unsaturated polyester/polyurethane hybrid polymer network

The phase behavior of a hybrid polymer network (HPN) composed of poly[(propylene glycol maleate)-co-(propylene glycol phthalate)] crosslinked with styrene and polyester–urethane crosslinked with methylene-bis-ortho-chloroaniline was examined. The correlation between phase separation and impact strength of the HPNs is discussed. The composition of HPNs has an effect on their properties.     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.