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The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 ℃. 相似文献
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提出一种新型非谐振型交错并联Boost零电压转换(ZVT)电路。在传统交错并联Boost拓扑基础上添加了一组由一个电感、两个电容、一个开关管、四个二极管组成的辅助网络,令主开关管实现了零电压开通与关断,辅助开关管实现了零电流开通与部分零电压关断,降低了开关损耗,提升了电路变换效率。软开关可在宽工作范围内有效实现,电路工作在连续电流模式(CCM),控制方式简明易行,辅助网络的引入没有给主开关管带来额外电流应力。通过复用部分辅助元件,提高了辅助网络利用率,减少了体积与费用;降低了开关过程中的dv/dt、di/dt,抑制了开关噪声。详细分析了电路拓扑结构、工作原理,并对主要参数进行了优化选取,最后通过实验验证了理论分析的正确性。 相似文献
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