GEAMAS: A Generic Architecture for Agent-Oriented Simulations of Complex Processes

This paper's object is to present the results of the GEAMAS project which aims at modeling and simulating natural complex systems. GEAMAS is a generic architecture of agents used to study the behavior emergence in such systems. It is a multiagent program meant to develop simulation applications. Modeling complex systems requires to reduce, to organize the system complexity and to describe suitable components. Complexity of the system can then be tackled with an agent-oriented approach, where interactions lead to a global behavior. This approach helps in understanding how non-determinist behavior can emerge from interactions between agents, which is near of self-organized criticality used to explain natural phenomena. In the Applied Artificial Intelligence context, this paper presents an agent software architecture using a model of agent. This architecture is composed of three abstract levels over which the complexity is distributed and reduced. The architecture is implemented in ReActalk, an open agent-oriented development tool, which was developed on top of Smalltalk-80. To illustrate our purpose and to validate the architecture, a simulation program to help in predicting volcanic eruptions was investigated. This program was run over a period of one year and has given many satisfying results unattainable up to there with more classical approaches.     

Distinction between multimoded and singlemoded self-pulsations-inDFB lasers

DFB lasers with split contacts are shown, by large signal dynamic modelling, to self-pulsate at gigabit frequencies. Two different self-pulsation schemes are discussed: where the laser switches between the higher and lower stop band modes, and where the laser pulsates around a single mode. The second scheme can yield self-pulsation frequencies beyond 20 GHz. Comparisons are made with experimental results     

Modeling of intensity noise including squeezing in DFB andFabry-Perot semiconductor laser diodes

A new time-domain model using the quantum formalism of the positive-P distribution is used to investigate squeezing in laser diodes, taking into account longitudinal hole burning and distributed noise sources, under steady-state and large-signal modulation. Simulations indicate that the laser structure determines the lowest achievable intensity noise. With losses present or power escaping from the rear facet, this minimum noise may be much higher than expected from the device quantum efficiency. Squeezing appears more difficult in DFB lasers than in Fabry-Perot lasers in our simulations. Mode-partition noise is removed by low-loss passive DBR sections, and such laser diodes are promising sources with low-intensity noise. Intensity noise in the large-signal dynamic regime is also simulated, showing that intensity-squeezed light output is possible     

Dynamic analysis of radiation and side-mode suppression in asecond-order DFB laser using time-domain large-signal traveling wavemodel

In this paper, we have developed a relatively simple algorithm to calculate the large-signal dynamic response of DFB lasers by solving the time-dependent coupled wave equations directly in the time domain. The spontaneous emission noise, longitudinal variations of carrier (hole burning) and photon densities as well as that of the refractive index are taken into consideration. To demonstrate the power of this straightforward algorithm, the model shows how the side-mode suppression ratio in devices with high κL and a λ/4: phase shift is significantly affected by the radiation in the second-order DFB laser. The time-dependent radiation pattern in grating-coupled surface-emitting lasers is also calculated for the first time     

Theory of enhanced amplitude modulation bandwidth in push-pullmodulated DFB lasers

Push-pull modulation of a two contact, uniform DFB laser enables amplitude modulation bandwidths well beyond the conventional electron-photon resonance limit for single contact devices. A small signal analytic theory for this AM response is given     

Ultra-high-bit-rate networking: from the transcontinental backboneto the desktop

The advances in photonic device technologies are bringing ultra-high-bit-rate networking-at speeds towards 100 Gb/s and beyond-much closer to practical reality. It is increasingly likely that in the longer term ultrafast optical time-division techniques-together with wavelength multiplexing-will be used in networks at all levels, from the transcontinental backbone to the desktop. Examples of devices include a subpicosecond clock source packaged inside a laptop personal computer and an OTDM switch on a single semiconductor chip, both produced at HHI. Advances similar to these make it possible now to envisage the use of OTDM techniques, not just in the highest layers of national and international networks, but also much closer to the user-such as the world-first demonstrations at BT Laboratories of a 40 Gb/s TDMA LAN and a 100 Gb/s packet self-routing switch for multiprocessor interconnection. Ultrafast networks might even provide the interconnection backplane inside future desktop routers and servers with massive throughput     

Switches and frequency converters based on cross-gain modulation in semiconductor optical amplifiers

The large-signal theory of frequency converters based on cross-gain and cross-phase modulations in a semiconductor optical amplifier is developed, for the case in which pump and probe are injected from the same facet (co-propagating case). Simple expressions for the bandwidth of cross-gain modulation are derived for single and cascaded SOA's, and large-signal simulations are carried out for cascaded SOA's, pointing out some important system issues. In the cascaded case, the effect of the loss between the SOA's is highlighted.     

Dynamics of monolithic passively mode-locked semiconductor lasers

Monolithic colliding pulse mode-locking (CPM) in semiconductor lasers is compared with self colliding pulse mode-locking (SCPM) through a large signal dynamic computer model which incorporates most of the significant features of semiconductor lasers. These include gain saturation, spontaneous emission, the gain-frequency relation, and the line-width enhancement factor. This new model replicates many of the published experimental results and also gives additional insight into the internal operation of the device. In particular, gain saturation combined with the standing waves created by colliding pulses within the saturable absorber produce a transient gain grating. This is found to have significant effects in locking either the even or the odd modes together in CPM. A performance comparison between CPM and SCPM is completed and some key design parameters of both configurations are explored     

Modeling self-pulsating DFB lasers with an integrated phase tuningsection

A theoretical model of a self-pulsating three-section DFB laser with an integrated phase tuning section is established. It is based on traveling wave equations and the standard carrier rate equations. Parameters of an existing device are used for applying the model. Key conditions and characteristics of self-pulsations (SPs) are modeled and compared with experimental results. The important role of phase tuning for turning on the SP is pointed out. The dependence of the SP regime on the detuning between the Bragg wavelengths in the laser and reflector is determined and the essential role of phase-readjustment is identified. Frequency tuning via the laser currents, as well as the pulse shape at various frequencies, is investigated. This allows us to identify the mechanism for frequency tuning. The model turns out to be a good tool to improve our knowledge of the self-pulsation effect and to design optimized devices