Miniature and tunable filters using MEMS capacitors

Microelectromechanical system (MEMS) bridge capacitors have been used to design miniature and tunable bandpass filters at 18-22 GHz. Using coplanar waveguide transmission lines on a quartz substrate (/spl epsiv//sub r/ = 3.8, tan/spl delta/ = 0.0002), a miniature three-pole filter was developed with 8.6% bandwidth based on high-Q MEMS bridge capacitors. The miniature filter is approximately 3.5 times smaller than the standard filter with a midband insertion loss of 2.9 dB at 21.1 GHz. The MEMS bridges in this design can also be used as varactors to tune the passband. Such a tunable filter was made on a glass substrate (/spl epsiv//sub r/ = 4.6, tan/spl delta/ = 0.006). Over a tuning range of 14% from 18.6 to 21.4 GHz, the miniature tunable filter has a fractional bandwidth of 7.5 /spl plusmn/ 0.2% and a midband insertion loss of 3.85-4.15 dB. The IIP/sub 3/ of the miniature-tunable filter is measured at 32 dBm for the difference frequency of 50 kHz. The IIP/sub 3/ increases to >50 dBm for difference frequencies greater than 150 kHz. Simple mechanical simulation with a maximum dc and ac (ramp) tuning voltages of 50 V indicates that the filter can tune at a conservative rate of 150-300 MHz//spl mu/s.     

Self and mutual admittance of slot antennas on a dielectric half-space

In this paper, an efficient implementation of the spectral domain moment technique is presented for computing the self and mutual coupling between slot antennas on a dielectric half-space. It is demonstrated that by the proper selection of the weighting functions in the method of moments, the analytic evaluation or simplification of the transverse moment integrals is enabled. This results into a significant reduction of the required computational labor. The method is then utilized in order to provide design data for the self and mutual admittances between two slot antennas on a dielectric substrate lens in the case of fused quartz (∈ _r =3.80), crystal quartz (∈ _r =4.53), silicon (∈ _r =11.9) and GaAs (∈ _r =12.8). The presented technique and associated results are useful when designing twin slot quasi-optical receivers, imaging arrays, phased arrays or power-combining arrays of slot elements at millimeter-wave frequencies.     

A low phase noise silicon 18-GHz push-push VCO

The design and measurement of a push-push voltage controlled oscillator (VCO) at 18.66-18.3 GHz are presented in this paper. The circuit includes two packaged silicon transistors (Siemens BFP 540F) and a microstrip resonator tuned by two GaAs varactor diodes (M/A-COM ML46580). A 360-MHz tuning range is obtained with an output power of 0-3.1 dBm. The fundamental rejection is around 17 dB for a wide range of collector bias current. The phase noise is below -103 dBc/Hz at 100-kHz offset and below -122 dBc/Hz at 1 MHz for the entire tuning bandwidth.     

Design and analysis of quasi-integrated horn antennas formillimeter and submillimeter-wave applications

The authors present a systematic process for the design of multimode quasi-integrated horn antennas, and provide a full range of practical antenna designs for millimeter- and submillimeter-wave applications. The design methodology is based on the Gaussian beam approach and the structures are optimized for achieving maximum fundamental Gaussian coupling efficiency. For this purpose, a hybrid technique is used in which the integrated part of the antennas is treated using full-wave analysis, whereas the machined part is treated using an approximate model. This results in a simple and efficient design process. The design procedure has been applied to the design of 20-, 23-, and 25-dB quasi-integrated horn antennas, all with a Gaussian coupling efficiency exceeding 97%. The designed antennas have been tested and characterized using both full-wave analysis and 91/370-GHz measurements. The quasi-integrated horn antennas are also examined as feed elements for Cassegrain antenna systems and are proved to be comparable to the traditional machined corrugated horn feeds     

Tensile Characteristics of Palladium Exposed to Hydrogen (Deuterium)

The effects of hydrogen (protium) or deuterium absorption∕desorption cycling on the strength and hardness of well-annealed palladium have been evaluated in this study. The results indicate that absorption followed by complete desorption of hydrogen or deuterium increases the strength and hardness characteristics of the palladium matrix while decreasing the metal's ductility. Increasing the amount of hydrogen or deuterium during absorption leads to more pronounced effects on the strength, hardness, and ductility of palladium. The effects of hydrogen absorption∕desorption are more pronounced than those of deuterium absorption∕desorption. The observed results have been explained in terms of the generation of dislocations during hydrogen or deuterium cycling.     

Inline capacitive and DC-contact MEMS shunt switches

This paper presents inline capacitive MEMS shunt switches suitable for X/K-band and Ka/V-band applications. The inline switch allows for a low- or high-inductance connection to the ground plane without changing the mechanical characteristics of the MEMS bridge. Excellent isolation and loss are achieved with this design, and the performance is very similar to the standard capacitive MEMS shunt switch. Also, a new metal-to-metal contact MEMS shunt switch is presented. A novel pull-down electrode is used which applies the electrostatic force at the same location as the metal-to-metal contact area. A contact resistance of 0.15-0.35 Ω is repeatable, and results in an isolation of -40 dB at 0.1-3 GHz. The measured isolation is still better than -20 dB at 40 GHz. The application areas are in high-isolation/low-loss switches for telecommunication and radar systems     

All-metal high-isolation series and series/shunt MEMS switches

This paper presents a novel all-metal series switch with several different pull-down electrode geometries. The switch results in an up-state capacitance of 5-9 fF and an isolation of -25 to -30 d8 at 10 GHz. The fabrication process is completely compatible with the standard capacitive (or dc-contact) shunt switch, A dc-30 GHz series/shunt switch is also presented with an isolation of -60 dB at 5 GHz and -42 dB at 10 GHz. This is the highest isolation switch available to-date. The performance is limited by radiation in the CPW lines and not by the series/shunt switch characteristics. The application areas are in high-isolation switches for basestations and satellite systems     

A miniature 2.1-GHz low loss microstrip filter with independent electric and magnetic coupling

A miniature planar two-pole microstrip filter with independent electric and magnetic coupling has been developed at 2.1 GHz. The independent coupling allows separate control of two transmission zeroes and result in a sharp filter skirt. The two-pole filter occupies an area of 6.6/spl times/4.6 mm/sup 2/ (30 mm/sup 2/) on an /spl epsi//sub r/=10.2 substrate, and shows a 5% bandwidth (100 MHz) and an insertion loss of 1.4 dB. The filter unloaded Q is 150 at 2.1 GHz which is much better than compatible filters done in LTCC technology.     

Wide-scan spherical-lens antennas for automotive radars

A new approach to wide scan-angle antennas at millimeter-wave frequencies is introduced with special focus on ease of manufacturing and reliability. The system is composed of planar feed antennas (tapered-slot antennas), which are positioned around a homogeneous spherical Teflon lens. Beam scanning can be achieved by switching between the antenna elements. The spherical-lens system is analyzed through a combined ray-optics/diffraction method. It is found that a maximum efficiency of 50%-55% can be achieved using Teflon, Rexolite, or quartz lenses. The efficiency includes taper, spillover, and reflection loss. Calculations also indicate that the maximum lens diameter is 30-40 λ₀, which results in a maximum directivity of 39.5-42 dB. Measurements done on a single-element feed and a 5-cm Teflon lens agree very well with theory and result in a 3-dB beamwidth of 5.5° and better than -20-dB sidelobe levels at 77 GHz. Absolute gain measurements show a system efficiency of 46%-48% (including dielectric loss). A 23- and 33-element antenna array with a scan angle of ±90° and a -3.5- and -6-dB crossover, respectively, in the far-field patterns was also demonstrated. The 23-element array resulted in virtually no gain loss over the entire 90° scan angle. This represents, to our knowledge, the first wide scan-angle antenna at millimeter-wave frequencies