Radiation detector made of a high-quality polycrystalline diamond

Radiation detector was made of a high-quality CVD polycrystalline diamond composed of frost column like structure diamond grains, and induced charge distribution spectra and drift velocities were measured by using alpha particles. As a result, the CVD polycrystalline achieved maximum induced charge of 83% of HP/HT type IIa diamond. Moreover, the CVD crystal had lower charge loss on electrons compared with the HP/HT type IIa diamond. Drift velocities of electrons and holes were v_e = 7.7 × 10⁴ and v_h = 7.3 × 10⁴cm/s at an electric field of 20 kV/cm, respectively. In addition, response function measurement for 14 MeV neutrons was carried out.     

Human peripheral eosinophils express functional interferon-gamma receptors (IFN-gammaR)

In order to determine whether or not IFN-gammaR is associated with regulatory mechanisms on human eosinophil function, we examined the expression of functional IFN-gammaR on human peripheral eosinophils. In this study, peripheral blood eosinophils were obtained from seven normal controls and 12 patients (bronchial asthma, n = 9, and hypereosinophilic syndrome (HES), n = 3), and the purity of eosinophils was 97.11 +/- 2.31%, n = 19. We first showed that anti-IFN-gammaR alpha-chain MoAb reacted with all tested eosinophils of both normal controls and patients by flow cytometry analysis. We also showed expression of mRNA for the alpha-chain of IFN-gammaR in all purified eosinophils of six individuals. Further, to characterize IFN-gammaR on eosinophils, we did binding experiments with 125I-IFN-gamma on purified peripheral eosinophils. The linear Scatchard plot indicated a single type of high-affinity binding sites (dissociation constant (Kd) = 3.89-4.95 x 10(-10) M, numbers of binding sites = 183-233/cell, n = 3). To determine whether IFN-gammaR on eosinophils is functional, we examined surface eosinophilic cationic protein (ECP) and CD69 induction after IFN-gammaR ligation with recombinant human IFN-gamma (rhIFN-gamma) on eosinophils by flow cytometry. rhIFN-gamma stimulation significantly induced both ECP and CD69 expression on the 2-18 h-cultured eosinophils in a dose-dependent manner. Further, the effects of rhIFN-gamma stimulation were significantly blocked by both a neutralizing anti-IFN-gamma MoAb and a blocking anti-IFN-gammaR MoAb. These results suggest that human peripheral eosinophils express functional IFN-gammaR.     

Effects of surrounding brightness on visual search for safety colors

The present article reports the investigation of the effects of surrounding brightness on a visual search for three safety colors: red, orange, and yellow. Images of visual stimuli consisting of an array of colored circles placed on a large visual field (a visual angle of 40°) were displayed on an 80‐in. screen with a DLP projector. Experiment I examined the search efficiency under three levels of background luminance that were equivalent to the three target luminances. The results showed that the search efficiency for the orange target decreased as the number of distractors increased, under each of the background luminance levels, whereas the efficiency scarcely decreased for the red and yellow targets. Although a reduction in background luminance increased the search efficiency for the orange target, it is suggested that the effect of background luminance is smaller than the effect of the target color in search efficiency. Experiment II examined the search efficiency under three conditions of low levels of incident illuminance, which were matched with a linear regression to the luminance of color chips of safety colors measured twilight conditions. The results showed that the search efficiency for the orange target decreased as the number of distractors increased under each of the different illuminance conditions, whereas the efficiency scarcely decreased for red and yellow targets. Furthermore, as illuminance decreased, the search time for the orange target was more greatly impacted than for red or yellow. These results imply that the recognition of orange tends to be influenced by the surrounding brightness. © 2005 Wiley Periodicals, Inc. Col Res Appl, 30, 400–409, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/col.20152     

InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 μm

Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 μm have been fabricated and tested. The lasers exhibited threshold current densities of 500 A/cm² for 1-mm-long cavities, an internal loss of 11 cm^-1, and characteristic temperatures as high as 50°C. The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined     

Enhanced production of rat interleukin-8 by in vitro and in vivo infections with influenza A NWS virus

We investigated the interleukin-8 (IL-8)-producing activity of influenza A NWS virus in cultured rat kidney NRK-52E cells and a rat influenza model. The production of rat IL-8 increased significantly in the virus-infected cells but not in UV-inactivated virus- or split-product-treated cells. The increase in IL-8 production could be detected in the bronchoalveolar lavage of infected rats. These data suggest that infectious virus has the potential to accelerate the production of IL-8 in cultured cells and in vivo in airway-lining cells.     

Interface state analysis using integrated room temperature gated photoluminescence

A gated room temperature integrated photoluminescence (PL) technique for estimating interface state densities in III-V metal-insultaor-semiconductor (MIS) structures is described. The use of gated low temperature spectral PL has already been demonstrated to be more sensitive than conventional 1 MHz capacitance-voltage (C-V) measurements. Room temperature integrated PL was measured on InP MIS structures and interface state densities of approximately 10/sup 12/ (cm/sup 2/ eV)/sup -1/ were calculated, similar to those reported earlier. Furthermore, the elimination of spectroscopic and cryogenic equipment makes this technique simpler and more cost effective than the spectral method, more comparable to C-V measurements.<>     

Sub-50-nm physical gate length CMOS technology and beyond usingsteep halo

Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with T_ox^inv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions     

Simple and modified rule of mixtures of deformation parameters in stage III of single ductile fibre-ductile matrix composites

By employing a single thick molybdenum fibre-copper matrix composite with very weak interfacial bonding, it was confirmed that flow stress, internal stress, effective stress and change in flow stress due to change in strain rate of the composite obey the simple rule of mixtures; strain-hardening exponent, stress exponent of strain rate, effective stress exponent of dislocation velocity and activation volume obey the modified rule of mixtures in the whole range of plastic deformation of the composite. This means that the inherent features of the fibre in the present composite were conserved beyond the failure strain of the fibre tested alone, and the above deformation parameters of the composite were, to a first approximation, determined by the inherent parameters of the fibre and the matrix.     

A 3-V, 2%-mW multibit current-mode ΣΔ DAC with 100 dBdynamic range

The area ratio of analog to digital for mixed-mode chip has been inversely proportional to the process design rule for a given dynamic range objective, in contradiction to the LSI trend. This paper presents a design approach to realize a high degree of size reduction with process design rules for analog circuitry and a signal processing architecture for digital circuitry. A five-level current-mode ΣΔ digital-to-analog converter (DAC) system reveals full scale total harmonic: distortion plus noise (THD+N) of -90 dB and dynamic-range of 100 dB at 3 V (low power of 22 mW). Analog-area down-scaling can be accomplished by this architecture to be 1.09 mm², using 0.6-μm double-poly double-metal (DPDM) CMOS. For the digital filter, a pipeline instruction sequence with multiplierless architecture also gives small area of 1.98 mm²     

The integral experiment on beryllium with D-T neutrons for verification of tritium breeding

A clean benchmark experiment on beryllium was performed with D-T neutrons at the FNS facility of the Japan Atomic Energy Agency. The main objective was to verify the integral data related to the tritium production on lithium isotopes. Tritium production rates, as well as activation reaction rates were measured inside the beryllium assembly that was shaped as a pseudo-cylindrical slab with an area-equivalent diameter of 628 mm and a thickness of 355 mm. Experimental results were analyzed with a three-dimensional Monte Carlo transport code MCNP-4C and FENDL/MC-2.0, JENDL-3.2/3.3 neutron transport libraries. Evaluation of reaction rates was based on the cross section data taken from the JENDL Dosimetry File and ENDF B-VI data libraries. Analysis shows that all calculation combinations (transport and activation cross section libraries) used for evaluation of reaction rates give data that is agreeable with measured values within 10%.