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1.
This paper investigates PID control design for a class of planar nonlinear uncertain systems in the presence of actuator saturation. Based on the bounds on the growth rates of the nonlinear uncertain function in the system model, the system is placed in a linear differential inclusion. Each vertex system of the linear differential inclusion is a linear system subject to actuator saturation. By placing the saturated PID control into a convex hull formed by the PID controller and an auxiliary linear feedback law, we establish conditions under which an ellipsoid is contractively invariant and hence is an estimate of the domain of attraction of the equilibrium point of the closed-loop system. The equilibrium point corresponds to the desired set point for the system output. Thus, the location of the equilibrium point and the size of the domain of attraction determine, respectively, the set point that the output can achieve and the range of initial conditions from which this set point can be reached. Based on these conditions, the feasible set points can be determined and the design of the PID control law that stabilizes the nonlinear uncertain system at a feasible set point with a large domain of attraction can then be formulated and solved as a constrained optimization problem with constraints in the form of linear matrix inequalities (LMIs). Application of the proposed design to a magnetic suspension system illustrates the design process and the performance of the resulting PID control law.   相似文献   
2.
A strategy that constructs the morphotropic phase boundary and manipulates the domain structure has been used to design the component of 0.96[Bi0.5(Na0.84K0.16)0.5Ti(1-x)NbxO3]-0.04SrTiO3 (BNKT-4ST-100xNb) to enhance the strain properties for actuator application. Non-equivalent Nb5+ donor doping modulates the phase transition from the mixture of rhombohedral and tetragonal phases to the pseudocubic phase and results in the coexistence of multiple phases. Moreover, the high-resolution TEM confirms the existence of polar nano regions that contribute to the macroscopic relaxor behaviour. The size of the domains is reduced with increasing Nb5+, resulting in an enhanced relaxor behaviour. The ferroelectric-relaxor transition temperature decreases from 85 to below 30 °C, implying a non-ergodic to ergodic relaxor transition. An improved strain of 0.56% and a giant normalized strain of 1120 pm/V were achieved for BNKT-4ST-1.5Nb, which were attributed to the unique domain structure in which nanodomains are embedded in an undistorted cubic matrix. Ferroelectric, antiferroelectric, and relaxor phases coexist. As the electric field is large enough, a reversible phase transition occurs. Furthermore, good temperature stability was obtained due to the stability of the nanodomains, and no degradation in strains was observed even after 104 cycles, which may originate from the reversible phase transition and dynamic domain wall. The results show that this design strategy offers a reference way to improve the strain behaviour and that BNKT-4ST-100xNb ceramics could be a potential material for high-displacement actuator applications.  相似文献   
3.
Due to the high health risks associated with indoor air pollutants and long-term exposure, indoor air quality has received increasing attention. In this study, we put emphasis on the molecular composition, source emissions, and chemical aging of air pollutants in a residence with designed activities mimicking ordinary Hong Kong homes. More than 150 air pollutants were detected at molecular level, 87 of which were quantified at a time resolution of not less than 1 hour. The indoor-to-outdoor ratios were higher than 1 for most of the primary air pollutants, due to emissions of indoor activities and indoor backgrounds (especially for aldehydes). In contrast, many secondary air pollutants exhibited higher concentrations in outdoor air. Painting ranked first in aldehyde emissions, which also caused great enhancement of aromatics. Incense burning had the highest emissions of particle-phase organics, with vanillic acid and syringic acid as markers. The other noteworthy fingerprints enabled by online measurements included linoleic acid, cholesterol, and oleic acid for cooking, 2,5-dimethylfuran, stigmasterol, iso-/anteiso-alkanes, and fructose isomers for smoking, C28-C34 even n-alkanes for candle burning, and monoterpenes for the use of air freshener, cleaning agents, and camphor oil. We showed clear evidence of chemical aging of cooking emissions, giving a hint of indoor heterogeneous chemistry. This study highlights the value of organic molecules measured at high time resolutions in enhancing our knowledge on indoor air quality.  相似文献   
4.
某含锌锡多金属硫化矿石Zn、Sn、Fe、S含量分别为6.04%、1.05%、29.33%、19.08%,锌主要以铁闪锌矿、闪锌矿的形式存在,锡主要以锡石的形式存在,铁主要以黄铁矿、磁黄铁矿等形式存在,其中的金属矿物共生关系密切,相互包裹现象普遍。为确保不影响后续选锡,对锌浮选流程进行了试验研究。结果表明:矿石在磨矿细度为-0.074 mm占80%的情况下,采用预先脱硫—锌硫混浮再分离流程处理,在选择硫酸铜为锌矿物活化剂、丁基黄药为捕收剂、松醇油为起泡剂、石灰为黄铁矿抑制剂的情况下,经1段脱硫、2粗1扫锌硫混浮、1粗2精锌硫分离,锌硫分离精选尾矿与锌硫混浮扫选精矿2次精选后锌硫分离,最终获得锌精矿Zn品位47.06%、回收率90.76%,试验指标良好。  相似文献   
5.
Here, we report a facile approach to electrostatically couple the surface charges of graphite nanoplate (GNP) fillers and poly(methyl methacrylate) (PMMA) polymer particles using ethylene maleic anhydride (EMA) copolymer as an electrostatic coupling agent. Our strategy involved switching the intrinsic repulsive electrostatic interactions between the directly exfoliated GNPs fillers and the PMMA particles to attractive electrostatic surface interactions for preparing core(PMMA)-shell (GNP) precursor in order to optimizing 3-dimensionally dispersed polymer nanocomposite. As a result, the electrical conductivity of the composites dramatically increased by a factor of 16.7 in the EMA-coupled GNP/PMMA composites compared with that of the EMA-free GNP/PMMA composites. In addition, the percolation threshold was also notably reduced from 0.32 to 0.159 vol% after electrostatic coupling of the GNPs fillers and PMMA particles. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48390.  相似文献   
6.
From chloromethylated polyimide, a useful starting material for modification of aromatic polyimides, a thermocurable transparent polyimide having acrylate side groups was prepared. In the presence of 1,8‐diazabicyclo[5,4,0]undec‐7‐ene, chloromethylated polyimide was esterified with acrylic acid to synthesize poly(imide methylene acrylate). The polymer was soluble in organic solvent, which makes it possible to prepare a planar film by spin coating. The polymer film became insoluble after thermal treatment at 230 °C for 30 min. Optical transparency of the film at 400 nm (for 1 µm thickness) was higher than 98 % and not affected by further heating at 230 °C for 250 min. Adhesion properties measured by the ASTM D3359‐B method ranged from 4B to 5B. Preliminary results of planarization testing showed a high degree of planarization (DOP) value (>0.53). These properties demonstrate that poly(imide methylene acrylate) could be utilized as a thermocurable transparent material in fabricating display devices such as TFT‐LCD. Copyright © 2004 Society of Chemical Industry  相似文献   
7.
ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.  相似文献   
8.
A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (IDS-VDS) curves, substrate resistance effect on the IDS-VDS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.  相似文献   
9.
In this paper damage propagation during metal forming process is investigated with the concept of continuum damage mechanics. An isotropic damage model based on the theory of materials of type N is adopted to describe the damage process of a ductile material with large elasto-viscoplastic deformation. To solve the finite elasto-viscoplasticity problem, a reasonable kinematic strain measure for largely deformed solids is used and the damage constitutive equations based on thermodynamical framework are developed. The stiffness degradation of the loaded material is chosen as a damage measure. An extended interior penalty method is used to impose the contact condition on the boundary. The highly nonlinear equilibrium equations are reduced to the incremental weak form and approximated by the total Lagrangian finite element method. The displacement control method along with the modified Riks' continuation technique based on displacement parameter is used to solve the incremental iterative equations. As numerical examples, upsetting, backward extrusion and punch problems are simulated and the results of damage propagation and J2 stress contours with and without damage are presented. For punch problems, spring back and residual stresses are also presented.  相似文献   
10.
The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.  相似文献   
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