全文获取类型
收费全文 | 610篇 |
免费 | 18篇 |
专业分类
电工技术 | 19篇 |
化学工业 | 163篇 |
金属工艺 | 24篇 |
机械仪表 | 20篇 |
建筑科学 | 7篇 |
能源动力 | 24篇 |
轻工业 | 34篇 |
水利工程 | 6篇 |
无线电 | 37篇 |
一般工业技术 | 134篇 |
冶金工业 | 112篇 |
原子能技术 | 14篇 |
自动化技术 | 34篇 |
出版年
2023年 | 2篇 |
2021年 | 3篇 |
2020年 | 4篇 |
2019年 | 9篇 |
2018年 | 11篇 |
2017年 | 14篇 |
2016年 | 12篇 |
2015年 | 6篇 |
2014年 | 16篇 |
2013年 | 31篇 |
2012年 | 24篇 |
2011年 | 47篇 |
2010年 | 13篇 |
2009年 | 25篇 |
2008年 | 23篇 |
2007年 | 30篇 |
2006年 | 13篇 |
2005年 | 19篇 |
2004年 | 14篇 |
2003年 | 15篇 |
2002年 | 16篇 |
2001年 | 12篇 |
2000年 | 13篇 |
1999年 | 10篇 |
1998年 | 50篇 |
1997年 | 32篇 |
1996年 | 21篇 |
1995年 | 15篇 |
1994年 | 18篇 |
1993年 | 13篇 |
1992年 | 5篇 |
1991年 | 10篇 |
1990年 | 7篇 |
1989年 | 3篇 |
1988年 | 2篇 |
1987年 | 2篇 |
1986年 | 6篇 |
1985年 | 10篇 |
1983年 | 5篇 |
1982年 | 2篇 |
1981年 | 5篇 |
1980年 | 4篇 |
1979年 | 3篇 |
1978年 | 11篇 |
1977年 | 5篇 |
1976年 | 4篇 |
1975年 | 1篇 |
1974年 | 2篇 |
1973年 | 6篇 |
1967年 | 2篇 |
排序方式: 共有628条查询结果,搜索用时 734 毫秒
1.
Takauchi H. Tamura H. Matsubara S. Kibune M. Doi Y. Chiba T. Anbutsu H. Yamaguchi H. Mori T. Takatsu M. Gotoh K. Sakai T. Yamamura T. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2094-2100
We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification. 相似文献
2.
Hiroto Imai Toshiyuki Ogawa Kazuo Sugimoto Masakazu Kataoka Yumo Tanaka Takehiko Ono 《Applied catalysis. B, Environmental》2005,55(4):259-265
The Co/MFI(SiO2/Al2O3 = 30) were prepared by a precipitation method with NaOCl in alkali solutions exhibited high activities to N2 at 250 °C for the selective catalytic reduction (SCR) of NOx. These catalysts showed two UV–vis bands at 700 and 400 nm, indicating the presence of octahedral Co(III) as well as tetrahedral Co(II). The high SCR activity over such Co(III, II)/MFI(30) seems to come from Co(III)---O moieties. The Co(II)MFI(30) catalysts prepared from Co(II)Cl2 exhibited low SCR activities due to the presence of tetrahedral Co(II) ions in MFI. Less CO formation occurred over Co/MFI catalysts. The Fe/MFI(30) catalyst exhibited high activity due to the presence of some Fe---O species in MFI but more amount of CO were produced during SCR. H/MFI(30) catalyst exhibited a good SCR activity. However, more amount of carbonaceous deposits were produced on it. The correlation between acid concentration and SCR activity was discussed over H/MFIs. 相似文献
3.
Takeyuki Gotoh Fuyuki Abe Takenori Ishizu Masaki Yoshio 《Journal of power sources》1996,60(2):193-196
A study of the pyrolysis of an aqueous solution of manganese nitrate in the presence of silver compounds has been carried out. Thermal analysis showed that the MnO2 formation temperature and the transformation temperature from MnO2 to Mn2O3 shifted towards a lower temperature in the presence of silver acetate. A large particle-size and high crystallinity MnO2 was formed; this may be a useful method of making an excellent tantalum capacitor with high capacitance. 相似文献
4.
5.
Hiroshi Ito Takehiko Ishiguro Tokutaro Komatsu Nozomu Matsukawa Gunzi Saito Hiroyuki Anzai 《Journal of Superconductivity and Novel Magnetism》1994,7(3):667-669
The superconducting transition of the organic compoundsκ-(BEDT-TTF)2 X is studied by resistive measurement in a magnetic field up to 10 T applied normal to the conducting plane. For the salts withX=Cu[N(CN)2]Br andX=CuCN[N(CN)2] the transition shows fanshaped broadening caused by superconductivity fluctuation. For theX=Cu(NCS)2 salt the resistivity shows a peak in the transition region in a magnetic field below 4 T.This phenomenon is suppressed in defect-reduced samples for intralayer conduction. We discuss this peak in relation to the thermal fluctuation on the Josephson junction structures in this salt. 相似文献
6.
7.
Using a newly devised model of dural sinus occlusion, we investigated the pathophysiology of venous haemorrhage as well as venous circulatory disturbance. The superior sagittal sinus (SSS) and diploic veins (DV) were occluded in 16 cats. Intracranial pressure (ICP), cerebral blood volume (CBV) and regional cerebral blood flow (rCBF) were measured for 12 hours after the occlusion. At the end of the experiment, cerebral water content was estimated. In another 8 cats additional occlusions of cortical veins were carried out. In both groups, the blood-brain barrier permeability was evaluated with Evans blue or horseradish peroxidase. The SSS and DV occlusion produced a significant increase in ICP and CBV concomitant with a significant decrease in rCBF. Cerebral water content also increased significantly. However, there was no transition of Evans blue and horseradish peroxidase through the cerebral vessels, and no haemorrhages could be observed. In contrast, the additional occlusion of cortical veins produced haemorrhagic infarctions with Evans blue extravasation in 6 out of the 8 cats. These data suggest that dural sinus occlusion may lead to an increase in CBV and cerebral water content resulting in intracranial hypertension and decreased rCBF. The brain oedema in this model seemed to be mainly hydrostatic oedema, and might also be contributed by cytotoxic oedema. The additional occlusion of cortical veins might be essential in the development of haemorrhage in this model, and the blood-brain barrier was also disrupted in these areas. 相似文献
8.
Tohru Morii Hiroyuki Hamada Muriel Desaeger Akihiko Gotoh Atsushi Yokoyama Ignaas Verpoest Zen-ichiro Maekawa 《Composite Structures》1995,32(1-4):133-139
This study deals with the impact property and damage tolerance of matrix hybrid composite laminates with different laminate constitution. The matrix hybrid composite laminates consisted of the laminae with a conventional epoxy resin and the laminae with a flexible epoxy resin modified from the conventional resin to avoid the interlaminar delamination. The impact energy absorption ratio greatly depended on the matrix resin placed at the impact face. The energy absorption was almost constant if the conventional resin was placed at the impact surface layer, while it increased exponentially with the increasing fraction of the flexible resin if the flexible resin was placed at the impact face. The impact energy was absorbed by the damage development and propagation in the laminate with conventional resin laminae as the impacted face, while it was absorbed by both the recoverable deformation of the flexible resin and the damage propagation in the laminate with flexible resin laminae as the impacted face. 相似文献
9.
Mochizuki K. Terano A. Momose M. Taike A. Kawata M. Gotoh J. Nakatsuka S. 《Electronics letters》1994,30(23):1984-1985
Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10-6 Ωcm2 for a p-type doping level of 3×1019 cm-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contact 相似文献
10.
Shukuri S. Kure T. Kobayashi T. Gotoh Y. Nishida T. 《Electron Devices, IEEE Transactions on》1994,41(6):926-931
A new semi-static complementary gain cell for future low power DRAM's has been proposed and experimentally demonstrated. This gain cell consists of a write-transistor and its opposite conduction type read-transistor with a heating gate as a storage node which causes a shift in the threshold voltage. This gain cell provides a two orders of magnitude larger cell signal output and higher immunity to noise on the bitlines when compared with a conventional one-transistor DRAM cell without increasing the storage capacitance even at a supply voltage of 0.8 V. The 0.87 μm2 cell size is achieved by using a 0.25 μm design rule with a polysilicon thin-film transistor built in the trench and phase shifted i-line lithography 相似文献