The World robot summit disaster robotics category – achievements of the 2018 preliminary competition

The World Robot Summit is a robot Olympics and aims to be held in a different country every four years from 2020. The concept of the Plant Disaster Prevention challenge is daily inspections, checks, and emergency response in industrial plants, and in this competition, robots must carry out these types of missions in a mock-up plant. The concept of the Tunnel Disaster Response and Recovery challenge is emergency response to tunnel disasters, and is a simulation competition whereby teams compete to show their ability to deal with disasters, by collecting information and removing debris. The Standard Disaster Robotics challenge assesses, in the form of a contest, the standard performance levels of a robot that are necessary for disaster prevention and emergency response. The World Robot Summit Preliminary Competition was held at Tokyo Big Sight in October 2018, and 36 teams participated in the Disaster Robotics Category. UGVs and UAVs contended the merits of new technology for solving complex problems, using core technologies such as mobility, sensing, recognition, performing operations, human interface, autonomous intelligence etc., as well as system integration and implementation of strategies for completing missions, gaining high-level results.     

Active sites of Cu-ZSM-5 for the decomposition of acrylonitrile

The catalytic decomposition of acrylonitrile (AN) over Cu-ZSM-5 prepared with various Cu loadings was investigated. AN conversion, during which the nitrogen atoms in AN were mainly converted to N₂, increased as Cu loading increased. N₂ selectivities as high as 90–95% were attained. X-ray diffraction measurements (XRD) and temperature-programmed reduction by H₂ (H₂-TPR) showed the existence of bulk CuO in Cu-ZSM-5 with a Cu loading of 6.4 wt% and the existence of highly dispersed CuO in Cu-ZSM-5 with a Cu loading of 3.3 wt%. Electron spin resonance measurements revealed that Cu-ZSM-5 contains three forms of isolated Cu²⁺ ions (square-planar, square-pyramidal, and distorted square-pyramidal). The H₂-TPR results suggested that in Cu-ZSM-5 with a Cu loading of 2.9 wt% and below, Cu⁺ existed even after oxidizing pretreatment. The activity of AN decomposition over Cu/SiO₂ suggested that CuO could form N₂, but, independent of the CuO dispersion, nitrogen oxides (NO_x) were formed above 350 °C. Cu⁺ and the square-pyramidal and distorted square-pyramidal forms of Cu²⁺ showed low activity for AN decomposition. Temperature-programmed desorption of NH₃ suggested that N₂ formation from NH₃ proceeded on Cu²⁺, resulting in the formation of Cu⁺. The Cu⁺ ions were oxidized to Cu²⁺ at around 300 °C. Thus, high N₂ selectivity over Cu-ZSM-5 with a wide range of temperature was probably attained by the reaction over the square-planar Cu²⁺, which can be reversibly reduced and oxidized.     

Aging response of the young’s modulus and mechanical properties of Ti-29Nb-13Ta-4.6Zr for biomedical applications

Alloys for implant devices require improved strength but a reduced Young’s modulus, in order to become mechanically more compatible with adjacent bone tissues. In this study, a new metastable β-type titanium alloy, Ti-29Nb-13Ta-4.6Zr (wt pct), was subjected to aging treatment to produce different microstructures, and the resulting mechanical properties, including the Young’s modulus, were measured. The Young’s modulus of this alloy is found to be sensitive to microstructures generated by various heat treatments. For microstructures varying from (α + β) to (α + β + ω) and (β + ω), the Young’s modulus increases with an accompanying increase in tensile strength and hardness, but decreases in ductility. The (β + ω) microstructure has a low strength, high modulus, and poor ductility and cannot be used for biomedical applications. For an (α + β) microstructure, the volume fraction of the phases is shown to be the main factor that determines the mechanical properties.     

X-ray absorptiometry

Bone mass measurements are essential in the diagnosis of osteoporosis, the monitoring of its progression, and the evaluation of therapeutical responses. Among various methods of bone mass measurements, single- and dual-X-ray absorptiometry, SXA and DXA, have shown excellent fundamental performance. In this paper, the principles of SXA and DXA; i.e., factors of fundamental performance, such as precision, data-acquisition, and radiation dose, the practice of DXA, recent advances in DXA, such as the lateral spine scan, the measurement of body composition, application to BMD measurement of the bones of small animals and at sites of metal implants, morphometry of the spine, and geometrical measurement in the proxial femur, and clinical applications to osteoporosis were particularly reviewed.     

Radiation tolerance for the SMASH-series front-end chips for a silicon micro-strip detector

The radiation tolerance for prototype front-end chips designed for a silicon micro-strip detector was examined with a ⁶⁰Co irradiation source to establish an allowable range of the radiation dose. The irradiated front-end chips were SMA²SH-64A, a 64-channel preamplifier array; SMA²SH-1, a single-channel preamplifier circuit with a comparator; and Control-C, a digital-control chip for the preamplifiers.     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

Sinterability and properties of Ti(N1−x,O x ) y -(V,Ta)C-Ni sintered alloys having a golden colour

The effect of oxygen and carbide addition on the sinterability of TiN _y (0.42<y<1)-Ni alloys, in which part of the nitrogen is replaced by oxygen was investigated. It was found that sinterability increased as the oxygen and carbide content increased, but the strength of the resultant sintered alloys was significantly reduced due to the presence of Ni₃Ti and Ti₂O₃ phases when the oxygen content exceeded 50 mol %. The sintered alloy with the highest hardness was found whenx=0.7,y=0.78 and the (V,Ta)C content was 18% by weight and this alloy was characterized by having a low density, good corrosion resistance and the colour of gold.     

Granular Reasoning Using Zooming In & Out: Part 2. Aristotle's Categorical Syllogism

The concept of granular computing is applied to Aristotle's categorical syllogism. Such kind of reasoning is called granular reasoning in this paper. For the purpose, two operations called zooming in & out are introduced to reconstruct granules of possible worlds.     

Skew simulation of a paper transferred by rubber rollers in printers

A skew of a paper transferred by rubber rollers in printers is simulated by FEM software. Effects of an imbalance of preload, an imbalance distribution of coefficient of friction and a front tension on the paper skew are investigated and how to determine the skew direction are shown. A simulation model is composed of a feed roller, a preload roller and a paper. The feed roller is rotated forcibly by a certain degree at every calculation step and a deformation, displacement and strain of the paper and rollers are calculated. A series of calculation results is shown as a motion simulation. The results show that the paper skews to the smaller preload side, to the smaller coefficient of friction side, or to the opposite side of the front tension. Further, effects of a skew prevention guide plate is simulated.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.