Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation: a numerical simulation

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation.The effects of charging on the dielectric constant will influence the charging dynamic in return.In this paper,we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation.The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model,respectively.Internal charge drift due to E-field,density gradient caused diffusion,charges trap by material defect,free electron and hole neutralization,and variation in the internal dielectric constant are considered when simulating the transport process.The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation.As a function of material nonlinear susceptibility and primary energy,the dynamics of charging states and dielectric constants are then presented in the charging process.It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time.Material with a larger nonlinear susceptibility corresponds a faster charging enhancement.In addition,the effective dielectric constant and the surface potential have a linear relationship in the charging balance.Nevertheless,with shrinking charging affect range,the situation with a higher energy primary electron comes with less dielectric constant variation.The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.     

基于表面构型的二次电子发射及微放电特性研究

针对航天有效载荷微波部件频发的微放电现象,采用微陷阱表面构型来抑制微波材料表面的二次电子发射,从而达到微放电抑制效果。通过硅基材料的表面刻蚀和金属Ag的表面溅射获得规整的金属表面微陷阱结构,将表面处理过的金属样品在二次电子发射平台的电子枪20~4 000 e V照射下,采用电流法获得金属微陷阱表面的二次电子产额曲线及抑制特性。此外,通过将表面出射的二次电子分为弹性背散射电子、非弹性背散射电子和本征二次电子,并跟踪电子在陷阱结构内的级联再入射过程,建立表面圆柱孔和矩形槽微陷阱表面的二次电子发射数值模型,模拟结果与测试结果能很好吻合。采用数值模拟的方法构造不同深宽比的微陷阱结构表面,最大二次电子产额、第一交叉能量以及微放电品质因子的变化规律。研究结果表明:陷阱结构的侧壁遮挡效果能有效抑制二次电子从表面发射,并且深宽比越大的表面陷阱结构抑制效果更强,而在相同深宽比情况下,圆柱孔陷阱结构比矩形槽陷阱结构对二次电子的抑制效果更好,此外,陷阱结构的深宽比不仅能使得最大二次电子产额减小、第一交叉能量增大,还会近线性地增大材料的微放电品质因子F。     

电子辐照介质材料二次电子发射系数与能谱测量数据库

电子辐照电介质材料的二次电子发射特性是影响各类真空电子器件与设备性能的重要参数,本文对电子束辐照下二十余种常用的典型介质材料的二次电子发射特性进行了实验测量研究.采用收集极负偏压法测量二次电子发射系数(SEY),通过给二次电子收集极加载不同的偏压来引导二次电子的运动,实现对积累电荷的中和,实验获得了介质材料的SEY随着...