Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

We report on the use of pulsed plasma-enhanced chemical vapor deposition (P-PECVD) technique and show that “state-of-the-art” amorphous silicon (a-Si:H) materials and solar cells can be produced at a deposition rate of up to 15 Å/s using a modulation frequency in the range 1–100 kHz. The approach has also been developed to deposit materials and devices onto large area, 30 cm×40 cm, substrates with thickness uniformity (<5%), and gas utilization rate (>25%). We have developed a new “hot wire” chemical vapor deposition (HWCVD) method and report that our new filament material, graphite, has so far shown no appreciable degradation even after deposition of 500 μm of amorphous silicon. We report that this technique can produce “state-of-the-art” a-Si:H and that a solar cell of p/i/n configuration exhibited an initial efficiency approaching 9%. The use of microcrystalline silicon (μc-Si) materials to produce low-cost stable solar cells is gaining considerable attention. We show that both of these techniques can produce thin film μc-Si, dependent on process conditions, with 1 1 1 and/or 2 2 0 orientations and with a grain size of approx. 500 A. Inclusion of these types of materials into a solar cell configuration will be discussed.     

Resource contention in shared-memory multiprocessors: A parameterized performance degradation model

A standard metric conventionally employed to compare the performance of different multiprocessor systems is speedup. Although providing a measure of the improvement in execution speed achievable on a system, this metric does not yield any insight into the factors responsible for limiting the potential improvement in speed. This paper studies the performance degradation in shared-memory multiprocessors as a result of contention for shared-memory resources. A replicate workload framework with a flexible mechanism for workload specification is proposed for measuring performance. Two normalized performance metrics—efficiency and overhead factor—are introduced to quantify the factors limiting performance and facilitate comparison across architectures. Finally, the proposed model is employed to measure and compare the performance of three contemporary shared-memory systems, with special emphasis on the newly released BBN Butterfly-II (TC2000), currently undergoing Beta test.     

INFLUENCE OF DRYING CONDITIONS ON THE FRAGILITY OF CORN KERNELS

A dynamic rcsring dnim war built to study the effects of air temperature, moisture content and grain shape on fragility of the air dried kernels. For drying rares under 0.05 kglkg min. the fragility of kernels could br described empirically as a function of the three experimental parameters.     

STEAM DRYING TECHNOLOGIES: JAPANESE R&D

This report reviews some fundamental and practical aspects of steam drying technologies based mainly on studies published in Japan. Steam drying kinetics, and some industrial technologies particularly for drying of foods, textiles and sludges are reviewed with focus on quality of dried material, drying time, dryer selection and energy recovery from steam dryer exhaust. For energy recovery, heat pump technologies are outlined along with characteristics of different types of steam compressors. A new process is proposed for steam drying; it combines a direct-indirect dryer followed by a direct steam dryer for internal moisture removal.     

The influence of packaging materials on RF performance

At frequencies beyond 1 GHz, every component of the IC package contributes to the RF performance, whether required or not. In this work, we study the effects of packaging materials namely, the substrate and the globtop/underfill material on RF performance. We have measured interconnects on two area-array CSPs, the ball grid array and the polymer stud grid array using IMEC’s MCM-D technology. The measurements on the package interconnect show that the losses in the package substrate material account for about 50% of the total losses at 1.8 GHz and this drops to less than 20% at 5.2 GHz. The losses due to impedance mismatch dominate the losses especially below 10 GHz and considerable improvement in performance cannot be obtained by using an improved/expensive substrate. The other study is about the influence of globtop/underfill materials on wirebonds (through 3D EM simulations) as well as on standard 50 Ω MCM-D transmission lines (through experiments). While a higher value of dielectric constant of the globtop/underfill material is better on wirebonds, the influence of loss tangent is felt only above values of 0.1. The influence of seven different globtop/undefill materials on 50 Ω transmission lines has been used to extract their dielectric constant and loss tangent values at 30 GHz. These results are very valuable since one can hardly find the properties of globtop/underfill materials beyond 1 GHz.