The World robot summit disaster robotics category – achievements of the 2018 preliminary competition

The World Robot Summit is a robot Olympics and aims to be held in a different country every four years from 2020. The concept of the Plant Disaster Prevention challenge is daily inspections, checks, and emergency response in industrial plants, and in this competition, robots must carry out these types of missions in a mock-up plant. The concept of the Tunnel Disaster Response and Recovery challenge is emergency response to tunnel disasters, and is a simulation competition whereby teams compete to show their ability to deal with disasters, by collecting information and removing debris. The Standard Disaster Robotics challenge assesses, in the form of a contest, the standard performance levels of a robot that are necessary for disaster prevention and emergency response. The World Robot Summit Preliminary Competition was held at Tokyo Big Sight in October 2018, and 36 teams participated in the Disaster Robotics Category. UGVs and UAVs contended the merits of new technology for solving complex problems, using core technologies such as mobility, sensing, recognition, performing operations, human interface, autonomous intelligence etc., as well as system integration and implementation of strategies for completing missions, gaining high-level results.     

A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond

The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.     

Artificial retina chips for image processing

Artificial retina chips which can simultaneously sense and process real world images are described. The comparison between artificial retinal systems and conventional image processing systems is described. Variable sensitivity photodetection, which is an essential technology for the artificial retina chips, is introduced in detail. The concept, structure, fundamental performance, operating principle, and processing functions for the fabricated artificial retinal chips are described. Applications including interactive games by gesture-input are also introduced. This work was presented, in part, at the International Symposium on Artificial Life and Robotics, Oita, Japan, February 18–20, 1996.     

Effect of rapid sample cooling on efficiency of multiple impurity-atom doping

Shallow and efficient doping of wide band-gap semiconductors has remained one of yet unresolved problems to date. A possible solution to this problem is doping with complexes of a few impurity atoms at a quasi-equilibrium state, which is introduced by controlled cooling of a sample after doping. In this work, (1) we first define a global and quasi-equilibria of our interest based on a simple thermodynamic model for a doped crystal, and then (2) we discuss how the cooling rate affects the probability of impurity-complex formation at a quasi-equilibrium as defined. Our main message is that one should design impurity complexes as small in size as possible which have as large a binding energy as possible. This is a required condition for complex designs when it is difficult to tune the cooling rate.     

Dendritic remodelling of retinal ganglion cells during development of the rat

Investigation of the morphology of ganglion cells in the cat retina has shown that a remarkable reduction in the number of dendritic spines and branches occurs during development of the alpha and beta cell classes. To learn whether dendritic remodelling represents a generalized mechanism of mammalian retinal ganglion cell development, we have examined the morphology of ganglion cells in the retina of the developing rat. The present study has concentrated on type II cells, which retain a great number of dendritic spines and branches in the adult and comprise a large proportion of the population of rat retinal ganglion cells. To reveal fine dendritic and axonal processes, Lucifer yellow was injected intracellularly in living retinae maintained in vitro. Size and complexity of the dendritic trees were found to increase rapidly during an initial stage of development lasting from late fetal life until approximately postnatal day 12 (P12). Dendrites and axons of immature ganglion cells expressed several transient morphological features comprising an excessive number of dendritic branches and spine-like processes, and short, delicate axonal sidebranches. The following developmental stage was characterized by a remarkable decrease in the morphological complexity of retinal ganglion cells and a slowed growth of their dendritic fields. The number of dendritic branches and spines of types I and II retinal ganglion cells declined after P12 to reach a mature level by the end of the first postnatal month. Thus, even cells that retain a highly complex dendritic tree into the adult state undergo extensive remodelling. These results suggest that regressive modifications at the level of the dendritic field constitute a generalized mechanism of maturation in mammalian retinal ganglion cells.     

Osteoclastic features of multinucleated giant cells responding to synthetic hydroxyapatite implanted in rat jaw bone.

Multinucleated giant cells (MGCs) that responded to synthetic hydroxyapatite (HAP) implanted in rat mandibles were studied with electron microscopy. HAP used in this study sintered at 200 degrees C (HAP200) and at 125 degrees C (HAP1250) after the synthesis by a wet method. One to three weeks after the intraosseous implantation of HAP, MGCs responding to HAP200 had not only well-developed ruffled border and the clear zone but well-developed perinuclear Golgi complex, many mitochondria and vesicles in their cytoplasms. MGCs responding to HAP1250 had the clear zone, but not the ruffled border although they showed similar cytoplasmic features to those of MGCs responding to HAP200. They merely extended short slender cytoplasmic processes to HAP1250. These results suggest that although osteoclast-like MGCs respond to HAP implanted in the bone, the development of the ruffled border-clear zone system depends on physicochemical properties of HAP.     

An ESR study of the film formation steps of vapor deposition polymerization of polyamic acid

A film of polyamic acid is formed by vapor deposition polymerization of pyromellitic dianhydride (PMDA) and 4,4′-diaminodiphenyl ether (ODA). We have taken ESR spectrum during the polymerization process and compared it with the ESR spectrum of films obtained from solution polymerization. In the intermediate polymers during vapor deposition polymerization, the amide bond (? CONH? ) is coplanar with the benzene ring and two protons in the PMDA molecule. This intermediate polymer has one unpaired electron that interacts with the two nitrogen nuclei equally. On the other hand, in the polymer obtained by solution polymerization, the amide bond and the benzene ring of PMDA are not coplanar. In this polymer, too, some of the molecules have an unpaired electron that seems to have almost no coupling with NH groups. These results imply that the polymer formation via vapor deposition proceeds through different intermediates and different molecular configurations from that via the solution process.