Microstructure,Hardness and Corrosion Resistance of ZrN Films Prepared by Inductively Coupled Plasma Enhanced RF Magnetron Sputtering

ZrN fihns were deposited on Si（111） and M2 steel by inductively coupled plasma （ICP）-enhanced RF magnetron sputtering. The effect of ICP power on the microstructure, mechanical properties and corrosion resistance of ZrN films was investigated. When the ICP power is below 300 W, the ZrN films show a columnar structure. With the increase of ICP power, the texture coefficient （To） of the （111） plane, the nanohardness and elastic modulus of the films increase and reach the maximum at a power of 300 W. As the ICP Power exceeds 300 W, the films exhibit a ZrN and ZrNx mixed crystal structure without columnar grain while the nanohardness and elastic modulus of the films decrease. All the ZrN coated samples show a higher corrosion resistance than that of the bare M2 steel substrate in 3.5% NaCl electrolyte. The nanohardness and elastic modulus mostly depend on the crystalline structure and Tc of ZrN（111）.     

MWPCVD制备金刚石膜装置的大功率稳定运行的研究

介绍了水冷反应室式MWPCVD制备金刚石膜装置的结构和工作原理,着重讨论了该装置长时间大功率稳定运行的措施。该装置在微波输入功率为3．0kW时能长时间稳定运行。用该装置成功地在硅衬底上沉积出金刚石膜。     

反应气压对MWPCVD金刚石膜中 非金刚石相碳含量的影响

在水冷反应室式MWPCVD装置中以CH4和H2为反应气体进行了金刚石膜的沉积实验,研究了反应气体的压强对金刚石膜中非金刚石碳相含量的影响。实验发现,当微波输入功率较小时,随着反应气压的上升,沉积膜中非金刚石相碳的含量单调下降;当微波输入功率较大时,沉积膜中非金刚石相碳的含量先随着反应气压的上升而降低,后又随着反应气压的上升而稍稍增加。     

Numerical Analysis of Plasma Initiated Polymerization

Plasma initiated polymerization is a kind of well-known radical polymerization mechanism, but it has the ＇living＇ polymerization feature and produces ultra-high molecular weight polymer. In order to explain such phenomena, we calculate the basic data of plasma initiated polymerization of methylmethacrylate （MMA） according to the principle of polymer physics and chemistry. It results in that the radical concentration ranges from 10^-12mol/L to 10^-16mol/L corresponding to the radical life in 10^4s to 10^8s, which means the radicals have a long lifetime. Moreover because of the long lifetime radicals it causes a unique feature rather than the common radical polymerization, and also shows no ＂living polymerization＂. It is noticed in experiments that there are two key factors playing important roles. One is the effective radical amount produced during the plasma discharging while the another is the diffusion factor.     

类金刚石薄膜的Raman光谱分析及红外光谱特性

用酒精和氢气的混合气体为工作气体 ,在不同的酒精浓度下 (1 0 % ,1 5% ,2 0 % )下利用微波等离子体化学气相沉积法在较低温度下 (450～ 50 0℃ )以单晶硅为衬底制备出类金刚石薄膜样品。 Raman光谱分析了酒精浓度对薄膜中金刚石成份的含量的影响。红外光谱分析表明薄膜的红外光透过率与薄膜的表面形貌、薄膜结构有关。酒精浓度为 1 0 %时得到的金刚石薄膜的红外光透过率最高 ,达到 62～ 72 % ,同时透过率曲线因薄膜干涉而引起的振荡也最为显著。     

共溅射法制备的Pt-C薄膜的微观结构和电化学性能的研究

用共溅射的方法制备了Pt-C薄膜,薄膜由Pt纳米粒子和非晶C组成。电子显微镜和X射线衍射的测试结果显示Pt纳米粒子镶嵌在非晶C之中。高分辨率透射电子显微图像证实了2~3 nm的Pt粒子镶嵌于非晶C层中。Pt和Pt-C薄膜的电化学特性是通过循环伏安法来研究的,电解液为氮气饱和的0.5g/mol的硫酸溶液。与纯Pt薄膜相比,Pt-C薄膜显示了更高的电化学活性面积,这主要是由于非晶C支撑基材的存在降低了Pt纳米颗粒的粒径。     

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si（100） wafer by inductively coupled plasma （ICP）-enhanced radio frequency （RF） magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.     

基于FPGA的三相可控硅电源数字触发电路的设计

介绍了基于FPGA的数字移相触发电路,主要应用于三相可控硅整流和逆变电路.该电路以FPGA基础,产生的触发脉冲宽度:TW＞1.6ms,脉冲电流峰值:IG＞400mA,各相脉冲不均衡度＜1°.试验结果表明,该电路产生的触发脉冲稳定性好,相序自适应,抗干扰能力强.     

电子回旋共振等离子体辅助溅射沉积锂磷氧氮薄膜

用电子回旋共振(ECR)等离子体辅助射频溅射沉积法制备快锂离子传导的锂磷氧氮 (LiPON)薄膜． X射线光电子能谱、扫描电子显微镜、紫外可见吸收光谱等手段表征了在不同ECR功率辅助下沉积的薄膜．结果显示,ECR等离子体对磁控溅射沉积薄膜的生长有明显的影响,能够提高N的插入量,改变薄膜的组成与结构．但是过高的ECR功率反而易破坏薄膜的结构,不利于N的插入．最佳的实验条件是在ECR 200W辅助下沉积的LiPON薄膜, 它的电导率约为8×10-6S／cm．讨论了ECR对沉积LiPON薄膜的N插入机理．