Intelligent FinTech Data Mining by Advanced Deep Learning Approaches

Computational Economics - With the progress of financial technology (FinTech), real-time information from FinTech is huge and complicated. For various fields of research, identifying intrinsic...     

國道東部公路蘇澳花蓮段隧道规劃設計之探討

對計畫之隧道工程加以介紹外,並探討隧道通過困難地段之處理對策,兼對長隧道之通風系統及防災隧道之設計概念略作敘述,以期達成工程技術交流之日的。     

Stability and robustness of time‐delay systems

Abstract

Using some properties of matrix measures and matrix's spectral radius, a new stability criterion for a linear time‐delay system is derived. This result is also extended to interval time‐delay systems.     

Life prediction of stainless steels by cyclic and stable hysteresis curves

Abstract

This study develops an analytical expression to describe the cyclic stress‐strain curve obtained from a series of fully‐reversed fatigue tests. A set of stress‐strain relationships is proposed to simulate the tensile branch of the stable hysteresis loop. The complete shape of the stable hysteresis loop is then constructed and the associated theoretical plastic work calculated by integrating the area within the enclosed curve. The theoretical plastic work is employed to predict the fatigue lives of the investigated materials on the basis of their respective stable plastic work per cyclelife curves. In this paper, the current mathematical derivations are based upon the endochronic theory of plasticity. The accuracy of the proposed set of stress‐strain relationships is verified by conducting fully‐reversed constant strain amplitude fatigue tests on AISI 316 and AISI 304 stainless steels. The experimental and simulation results are found to be in good agreement, hence confirming the accuracy of the proposed analytical stress‐strain relationships. Again, comparing the obverted and predicted fatigue lives, a good agreement is found between the two sets of results.     

The high‐speed measurement of a partial area imaging system applied to photoresist development processing

Abstract

Among the parameters that affect photolithography, the most important are exposure and development time which affect the coating photoresist characteristics. This study further researches the relationship between the exposure and development time using a high speed image inspection system, and the relationship between the development time and photoresist depth using a Scanning Probe Microscope (SPM). A partial scan CCD camera and high speed frame capture card were used to obtain the photoresist development processing parameters. The experimental results verified that this imaging system provides an economical and effective method for producing a micro‐photo‐etched product. It is expected that these experiments can also offer some good references useful in the micro electro mechanical industrial field.     

On a transistor-type hydrogen gas sensor prepared by an electrophoretic deposition (EPD) approach

A Pd/GaN/AlGaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on an electrophoretic deposition (EPD) approach, is fabricated and studied. Due to the formation of good Schottky gate contact by an EPD approach, the studied HFET shows improved DC performance including the suppressed gate current and better thermal stabilities on current–voltage (I–V) characteristics. This is mainly attributed to the reduction of interface trap density and improved Pd morphology. The EPD-based Pd morphologies are examined by X-ray diffraction, energy dispersive spectroscopy, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. For the used gate-dimension of 1 μm × 100 μm, an EPD-based HFET shows low gate current of 2.9 nA, maximum drain saturation current of 490 mA/mm, and maximum extrinsic transconductance of 78.9 mS/mm at room temperature. Also, solid thermal stabilities on maximum drain saturation current (−0.46 mA/mm K) and maximum extrinsic transconductance (−0.08 mS/mm K) are found as the temperature is increased from 300 to 600 K. For hydrogen gas sensing application, at 370 K, the maximum hydrogen sensitivity of 600.1 μA/mm ppm H₂/air under a 5 ppm H₂/air ambiance and fast response time (30 s) and recovery time (47 s) under a 10,000 ppm H₂/air ambiance are obtained. The EPD approach also demonstrates advantages of low cost, simple apparatus, easy process, little restriction on the shaped substrate, composited deposition, and adjustable alloy grain size. Therefore, the proposed EPD approach gives the promise for fabricating high-performance HFET devices and hydrogen gas sensors.