Plasma assisted molecular beam epitaxy growth of GaN

The growth of GaN on sapphire by plasma assisted molecular beam epitaxy (MBE) is investigated with the object of optimizing the material quality. The V/III flux ratio as well as the growth temperature are discussed in relation to their impact on electrical, optical and structural layer properties. Samples grown under nearly stoichiometric conditions exhibit both the highest mobilities and the highest photoluminescence efficiencies. Growth temperatures above 800°C were found to result in narrow reflections in X-ray diffraction. However, the chemical decomposition of GaN at temperatures above 850°C limits the suitable temperature range for the growth under high vacuum conditions.     

H1技术——针刺新方法

详细介绍了H1针刺技术的原理 ,以及通过不规则弧形针刺区和针直线运动实现针以一定角度倾斜否则入纤网使纤网性能得到改善的特点 ,还介绍了这项技术带来的好处 ,如纤网各向同性提高、纤维纠缠更好和强力提高。