Evolution of collaboration and optimization of impact: self-organization in multinational research

Scientometrics - The expanding presence of multinational research teams highlights the importance of characterizing the outcomes of international collaboration. Herein, we characterize the...     

A low-phase-noise K-band CMOS VCO

A novel circuit topology for low-phase-noise voltage controlled oscillators (VCOs) is presented in this letter. By employing a PMOS cross-coupled pair with a capacitive feedback, superior circuit performance can be achieved especially at higher frequencies. Based on the proposed architecture, a prototype VCO implemented in a 0.18-/spl mu/m CMOS process is demonstrated for K-band applications. From the measurement results, the VCO exhibits a 510-MHz frequency tuning range at 20GHz. The output power and the phase noise at 1-MHz offset are -3dBm and -111dBc/Hz, respectively. The fabricated circuit consumes a dc power of 32mW from a 1.8-V supply voltage.     

Artificial neural networks and statistical modeling for electronic stress prediction using thermal profiling

Electronic components are constantly under stress due to factors such as signal density, temperature, humidity, and high current and voltage. Relatively little research has emphasized stress-level prediction under voltage stress. The purpose of this paper was to develop an electronic thermal profile model for stress-level prediction utilizing neural network (NN) and statistical approaches, such as multivariate regression models. Electronic components were removed from boards, subjected to different levels of stress, then replaced. An infrared camera was then used to capture information about component temperature changes over time under normal operating and stress conditions. Statistical analysis of the captured images suggests a strong correlation between thermal profiles and voltage stress levels. Artificial neural network (ANN) and statistical approaches were used to model temperature change profiles for components that had been stressed at different levels, and their predictive ability was compared. Separate data sets were used for model development and model verification. ANN prediction rates were around 70%, compared to 30% for the statistical approach. Experiments were also conducted to evaluate the robustness of the ANN model to the presence of noise in the data. Results suggested that the ANN model was able to accommodate the presence of noise. Various backpropagation (BP) learning algorithms were also evaluated and yielded similar average error rates. A 3-2-1 ANN topology performed better than 3-3-1 or 3-2-2-1 topologies, perhaps because the 3-2-1 topology has a higher data sample to nodes ratio than the other topologies.     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

Astrocytes regulate amino acid receptor current densities in embryonic rat hippocampal neurons

Embryonic rat hippocampal neurons were cultured in a serum-free defined medium (MEM/N3) either directly on poly-D-lysine (PDL) or on a confluent monolayer of postnatal cortical astrocytes, C6 glioma cells, or Rat2 fibroblasts. Neurons on PDL were grown in MEM/N3 or in MEM/N3 conditioned for 24 h by astrocytes or C6 cells. Membrane capacitance (Cm) and gamma-aminobutyric acid (GABA)-, glycine-, kainate-, and N-methyl-D-aspartate (NMDA)-induced currents were quantified using whole-cell patch-clamp recordings. Cm as well as the amplitude and the density of these currents in neurons cultured on astrocytes were significantly greater than those in neurons grown on PDL after 24 and 48 h. C6 cells mimicked astrocytes in promoting Cm and GABA-, glycine-, and NMDA-evoked, but not kainate-evoked, currents. Cm and currents in neurons grown on Rat2 cells were comparable to those in neurons on PDL. Astrocytes maintained in culture for 3 months were noticeably less effective than freshly prepared ones just grown to confluence. Suppression of spontaneous cytoplasmic Ca2+ (Ca[c]2+) elevations in astrocytes by 1,2-bis(2-aminophenoxy) ehane-N, N, N, N-tetraacetic acid acetoxymethyl ester (BAPTA-AM) loaded intracellularly blocked the observed modulatory effects. Medium conditioned by either astrocytes or C6 cells mimicked the effects of direct coculture of neurons on these cells in promoting Cm and amino acid-evoked currents. Inclusion of antagonists at GABA and glutamate receptors in coculture experiments blocked the observed effects. Thus, diffusible substances synthesized and/ or secreted by astrocytes in a Ca(c)2+-dependent manner can regulate neuronal growth and aminoacid receptor function, and these effects may involve neuronal GABA and glutamate receptors.     

Highly Efficient Orange and Green Solid‐State Light‐Emitting Electrochemical Cells Based on Cationic IrIII Complexes with Enhanced Steric Hindrance

Highly efficient orange and green emission from single‐layered solid‐state light‐emitting electrochemical cells based on cationic transition‐metal complexes [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ (where ppy is 2‐phenylpyridine, dFppy is 2‐(2,4‐difluorophenyl)pyridine, and sb is 4,5‐diaza‐9,9′‐spirobifluorene) is reported. Photoluminescence measurements show highly retained quantum yields for [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂ sb]PF₆ in neat films (compared with quantum yields of these complexes dispersed in m‐bis(N‐carbazolyl)benzene films). The spiroconfigured sb ligands effectively enhance the steric hindrance of the complexes and reduce the self‐quenching effect. The devices that use single‐layered neat films of [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ achieve high peak external quantum efficiencies and power efficiencies of 7.1 % and 22.6 lm W^–1) at 2.5 V, and 7.1 % and 26.2 lm W^–1 at 2.8 V, respectively. These efficiencies are among the highest reported for solid‐state light‐emitting electrochemical cells, and indicate that cationic transition‐metal complexes containing ligands with good steric hindrance are excellent candidates for highly efficient solid‐state electrochemical cells.