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Conformal mapping techniques are used to obtain the closed-form expressions of the characteristic impedance and effective dielectric constant of the asymmetrical coplanar waveguide with finite line dimensions and substrate thickness. These closed-form expressions are generally applicable to design various particular types of coplanar waveguide transmission lines. 相似文献
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We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the (111) direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 10^4 cm^-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature (TGa/Tsb) ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 × 10^17 cm^-3 and the hole mobility is 130 cm^2/(V·s). These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells. 相似文献
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GaSb的禁带宽度为0.72eV,是热光伏电池的理想材料。采用共蒸发的方法,在普通玻璃衬底上生长GaSb多晶薄膜。通过XRD谱、Hall及透射反射谱测试,研究了Ga、Sb源的蒸发温度、衬底温度以及薄膜厚度对薄膜的结构特性和光电特性的影响。研究表明,随衬底温度的升高、薄膜厚度的增加,晶粒尺寸逐渐增大;随衬底温度的升高、Ga源温度的降低以及厚度的增加,迁移率逐渐上升,迁移率最高可达172cm2/(V.s);随衬底温度的降低、Ga源温度的提高以及厚度的增加,载流子浓度逐渐增加。 相似文献
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Coplanar waveguide transmission lines have become quite attractive due to its applica-tion to microwave or millimeter-wave integrated circuits and devices.Calculations of char-acteristic impedance and effective dielectric constant of... 相似文献
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