一种基于电流阶梯波的相变存储器擦驱动电路

基于相变存储器的擦操作(SET)特性,设计了一种能够产生电流阶梯波的相变存储器擦驱动电路,采用130 nm标准CMOS工艺将其与128 kb的相变存储器实验芯片集成.相比传统的单一电流脉冲擦驱动电路,这种改进后的擦驱动电路能将相变存储单元的电阻均值从15 kΩ左右降至7 kΩ左右,并且存储阵列的阻值分布一致性也得到提升...     

软抛光垫条件下非晶态Ge2Sb2Te5的化学机械抛光

Chemical mechanical planarization（CMP） of amorphous Ge₂Sb₂Te₅（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.     

纳米集成电路大生产中新工艺技术现状及发展趋势

近年来微纳电子科学和集成电路产业的发展,证明了有效30多年的摩尔定律未来正在受到挑战.在传统的集成电路技术发展似乎走到技术尽头的时候,依靠新材料和新结构的技术发展,摩尔定律才能继续显示其有效性.但是技术发展的步伐呈现减缓的趋势.在进入21世纪后,各种新器件材料的引进以及各种新器件结构的陆续推出,给世界集成电路产业带来了诸多机遇和挑战.本文总结分析了微纳电子产业技术主流发展趋势,包括:新材料新工艺应用、先进CMOS制造工艺集成技术、3D系统芯片封装技术、新型存储器技术、新型逻辑器件的产业化技术,并且介绍了国内先进集成电路产业技术的研发现状,包括近年来取得的一些生产技术研发成果.文中提出了一些纳米集成电路生产工艺技术发展中的主要挑战和应对建议,并针对国内集成电路科技和产业发展提出了一些看法.