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1.
郭志强  刘力源  吴南健 《红外与激光工程》2018,47(5):520001-0520001(10)
设计了一款用于高速CMOS图像传感器的多列共享列并行流水线逐次逼近模数转换器。八列像素共享一路pipeline-SAR ADC,从而使得ADC的版图不再局限于二列像素的宽度,可以在16列像素宽度内实现。该模数转换器采用了异步控制逻辑电路来提高转换速度。半增益数模混合单元电路被用于对第一级子ADC的余差信号放大,同时被用于降低对增益数模混合单元电路中运放性能的要求。相关电平位移技术也被用于对余差信号进行更精确的放大。整个pipeline-SAR ADC第一级子ADC精度为6-bit,第二级子ADC为7-bit,两级之间存在1-bit冗余校准,最终实现12-bit精度。输入信号满幅电压为1 V。该8列共享并行处理的pipeline-SAR ADC在0.18 m 1P4M工艺下制造实现,芯片面积为0.204 mm2。仿真结果显示,在采样频率为8.33 Msps,输入信号频率为229.7 kHz时,该ADC的信噪失真比为72.6 dB;在采样频率为8.33 Msps,输入信号频率为4.16 MHz时,该ADC的信噪失真比为71.7 dB。该pipeline-SAR ADC的电源电压为1.8 V,功耗为4.95 mW,功耗品质因子(FoM)为172.5 fJ/conversion-step。由于像素尺寸只有7.5 m,工艺只有四层金属,因此这款12-bit多列共享列并行流水线逐次逼近模数转换器非常适用于高速CMOS图像传感器系统。  相似文献   
2.
This paper presents an ultra-low-power area-efficient non-volatile memory(NVM) in a 0.18μm singlepoly standard CMOS process for passive radio frequency identification(RFID) tags.In the memory cell,a novel low-power operation method is proposed to realize bi-directional Fowler-Nordheim tunneling during write operation. Furthermore,the cell is designed with PMOS transistors and coupling capacitors to minimize its area.In order to improve its reliability,the cell consists of double floating gates to store the data,and the 1 kbit NVM was implemented in a 0.18μm single-poly standard CMOS process.The area of the memory cell and 1 kbit memory array is 96μm~2 and 0.12 mm~2,respectively.The measured results indicate that the program/erase voltage ranges from 5 to 6 V.The power consumption of the read/write operation is 0.19μW/0.69μW at a read/write rate of (268 kb/s)/(3.0 kb/s).  相似文献   
3.
 该文提出了一种并行的快速车道线检测系统。该系统包含一个32×32的处理器单元(PE)阵列和双RISC子系统。PE阵列实现车道线图像像素级并行预处理,获取图像边缘特征,双RISC核子系统根据边缘特征实现两条车道线直线参数的并行检测,从而使得检测过程的每一步都是并行进行,显著提高检测速率。该系统用FPGA实现。实验结果表明本系统具有良好的鲁棒性且可达到每秒50帧的检测速率,满足了车道偏离预警系统实时性要求,具备重要的应用价值。  相似文献   
4.
本文基于sigma-delta分数频率合成器设计了多标准I/Q正交载波产生系统。通过合理的频率规划,此系统能够应用于多标准无线通讯系统。设计采用了0.13um的标准CMOS射频工艺。测试结果显示3个正交VCO的频率覆盖范围为3.1GHz至6.1GHz(65.2%),然后通过串联的除二分频器,可以使系统的频率连续覆盖0.75GHz至6GHz。整个芯片的面积是2.1mm1.8mm。在1.2V的电源电压下系统功耗为21.7mA(除去输出缓冲级)。利用频率预置技术,锁相环的锁定时间小于4us。并且在系统中加入了非易失性存储器(NVM),能够存储系统的一些数字配置信息包括锁相环的预置信息,利用NVM的非易失存储特性,使得整个系统能够避免重复的校正。  相似文献   
5.
This paper proposes a new structure to lower the power consumption of a variable gain amplifier (VGA) and keep the linearity of the VGA unchanged. The structure is used in a high rate amplitude-shift keying (ASK) based IF-stage. It includes an automatic gain control (AGC) loop and ASK demodulator. The AGC mainly consists of six-stage VGAs. The IF-stage is realized in 0.18 μ m CMOS technology. The measurement results show that the power consumption of the whole system is very low. The system consumes 730 μ A while operating at 1.8 V. The minimum ASK signal the system could detect is 0.7 mV (peak to peak amplitude).  相似文献   
6.
应用于高速CMOS图像传感器的10比特列并行循环式ADC   总被引:1,自引:1,他引:0  
韩烨  李全良  石匆  吴南健 《半导体学报》2013,34(8):085016-6
This paper presents a high-speed column-parallel cyclic analog-to-digital converter(ADC) for a CMOS image sensor.A correlated double sampling(CDS) circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise(FPN) effectively.One single channel ADC with an area less than 0.02 mm~2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.  相似文献   
7.
李贵柯  冯鹏  吴南健 《半导体学报》2011,32(10):133-138
We present a monolithic ultraviolet(UV) image sensor based on a standard CMOS process.A compact UV sensitive device structure is designed as a pixel for the image sensor.This UV image sensor consists of a CMOS pixel array,high-voltage switches,a readout circuit and a digital control circuit.A 16×16 image sensor prototype chip is implemented in a 0.18μm standard CMOS logic process.The pixel and image sensor were measured. Experimental results demonstrate that the image sensor has a high sensitivity of 0.072 V/(mJ/cm~2) and can capture a UV image.It is suitable for large-scale monolithic bio-medical and space applications.  相似文献   
8.
This paper proposes a fast-settling frequency-presetting PLL frequency synthesizer. A mixedsignal VCO and a digital processor are developed to accurately preset the frequency of VCO and greatly reduce the settling time. An auxiliary tuning loop is introduced in order to reduce reference spur caused by leakage current. The digital processor can automatically compensate presetting frequency variation with process and temperature, and control the operation of the auxiliary tuning loop. A 1.2 GHz integer-N synthesizer with 1 MHz reference input was implemented in a 0.18 μm process. The measured results demonstrate that the typical settling time of the synthesizer is less than 3 μs, and the phase noise is –108 dBc/Hz@1MHz. The reference spur is –52 dBc.  相似文献   
9.
提出了一个适用于EPC Gen2协议的小面积低功耗RFID射频前端电路的设计方案.射频前端电路包括整流器、ASK解调器、ASK和BPSK调制器和传感器模块,射频的工作频率为860~960 MHz.基于具有不挥发存储器和肖特基二极管选项的0.35μm CMOS工艺,设计了RFID射频前端电路.采用开关电容电路技术实现了小面积低功耗RFID射频前端电路.  相似文献   
10.
提出了两种新型的由单电子晶体管、MOS管和电容组成的数模转换(ADC)和模数转换(DAC)电路.这种混合ADC和DAC电路可在室温条件下工作且负载能力大,功耗低.对这种混合单电子晶体管和MOS管的ADC和DAC电路进行了仿真,仿真结果表明两种电路能够在室温条件下正常工作.采样频率达到100MHz以上,功耗约为0.1μW.  相似文献   
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