一种新型温度不敏感阵列波导光栅的设计

提出了一种新型结构的阵列波导光栅。在AWG的阵列波导中嵌入多种补偿介质,补偿二阶或二阶以上温度偏移。首先从理论上推导出器件的工作原理表达式;其次给出了器件结构的设计方案,阵列波导采用同心圆结构设计,使得嵌入介质与波导垂直,有效减小了散射损耗,并显著提高了芯片的集成度。最后,对器件性能进行了评估,引入的附加损耗小于1dB;理论上实现了零温度偏移。     

低双折射系数的硅基二氧化硅波导制备与数值分析

采用非传统工艺制备了硅基二氧化硅光波导,制备的波导侧向存在一硅层.利用有限元法(FEM)从理论上分析了侧向硅层存在时的硅基二氧化硅光波导的应力分布,并采用全矢量隐含迭代法束传播法(ADI-BPM)对制备的光波导双折射系数进行计.结果表明,侧向硅层的存在可平衡硅基二氧化波导在水平方向与垂直方向的应力,减小这两个方向上的应力差,有助于减小硅基二氧化硅光波导的应力双折射.     

A 45-channel 100 GHz AWG based on Si nanowire waveguides

A 45-channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about ?23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma (ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of ?8 dB. This work has been supported by the National High Technology Research and Development Program of China (No.2015AA016902), and the National Natural Science Foundation of China (Nos.61435013 and 61405188). E-mail:zhangjiashun@semi.ac.cn      

A fast SOI-based variable optical attenuator with a p-i-n structure with low polarization dependent loss

According to the plasma dispersion effect of silicon (Si), a silicon-on-insulator (SOI) based variable optical attenuator (VOA) with p-i-n lateral diode structure is demonstrated in this paper. A wire rib waveguide with sub-micrometer cross section is adopted. The device is only about 2 mm long. The power consumption of the VOA is 76.3 mW (0.67 V, 113.9 mA), and due to the carrier absorption, the polarization dependent loss (PDL) is 0.1 dB at 20 dB attenuation. The raise time of the VOA is 34.5 ns, the fall time is 37 ns, and the response time is 71.5 ns.     

光敏性杂化SiO2波导薄膜的制备、表征及应用

利用有机/无机杂化方法制备了光敏性溶胶-凝胶（sol-gel）SiO2材料，在预生长了18μm厚的SiO2上包层的硅基片上旋涂成膜。经前烘、紫外曝光、后烘的薄膜在5μm×5μm的扫描范围内的表面粗糙度只有0．266nm，表面起伏度只有0．336nm。利用紫外光直写技术，制作出条形波导器件。SEM照片表明波导端面形状较好，侧壁陡直。对1×4多模干涉型分束器进行初步的通光测试，观察到分光效果较好的近场输出图像。     

紫外光直写杂化溶胶-凝胶SiO2光波导器件

利用有机/无机杂化方法制备了光敏性溶胶-凝胶(sol-gel)SiO2材料,在硅基片上旋涂成膜.研究了薄膜折射率和厚度随紫外曝光时间、后烘温度及时间等外界工艺条件的变化关系.利用紫外光直写技术,制作出1×2,1×4多模干涉(MMI)型分束器,并且观测到了分光效果较好的近场输出图像.     

前言

<正>随着光子技术在光纤通信、微波光子学、激光雷达、量子信息处理等领域的广泛应用,光子和光电子集成的重要性日益突显,成为解决相关应用面临的体积、功耗和成本瓶颈的关键。实际上,早在20世纪60年代就提出了集成光学的概念。受到集成电路(IC)技术的启发,提出了光子集成回路(PIC)和光电集成电路(OEIC)的概念,期望通过集成技术来增强光电子器件的性能,减小体积和功耗,并提高可靠性。然而,相比于集成电路芯片的迅猛发展,光子和光电子集成由于面临材料和工艺等一系列挑战,直到近十余年才实现突破。目前,大规模光子集成技术正在逐渐走向实用化。     

Si基片上掺Ge SiO2的火焰水解法制备

用火焰水解法在单晶Si片上沉积了掺Ge的SiO2(GeO2-SiO2)粉末,随后在高温炉中将此粉末烧结成玻璃.用光学显微镜观察了样品表面形貌,研究了不同的烧结工艺对样品形貌的影响.用X射线光电子能谱检测了样品的元素组成,并用棱镜耦合法测量了样品的折射率和厚度.结果表明,用适宜的工艺条件制备出的掺Ge的SiO2具有表面平整光滑,折射率和厚度可调等优点,适合用作Si基SiO2波导器件的芯层.     

基于光子晶体渐变型双异构微腔的掺铒硅光致发光研究

实验验证了室温下二维氧化物下包层非对称平板三角晶格光子晶体渐变型双异构微腔对绝缘体上硅(SOI)基片上铒氧共掺硅材料的显著发光增强作用.在波长为488 nm、功率为15 mW激光激发下,微腔的光致发光(PL)谱呈现出一个位于1 557.93 nm通信波长处的尖锐狭窄的发光峰,相比于无光子晶体区域,发光增强了约13倍.谐振峰随光泵浦功率增加,发生明显的红移,Q值逐渐下降,在1.5mW光泵浦功率下,Q值达6 655.微腔谐振波长与光子晶体晶格周期之间呈线性正比关系,通过调整晶格周期,实现了掺铒硅发光增强峰波长的灵活可控.     

Ultra compact triplexing filters based on SOI nanowire AWGs

An ultra compact triplexing filter was designed based on a silicon on insulator(SOI) nanowire arrayed waveguide grating(AWG) for fiber-to-the-home FTTH.The simulation results revealed that the design performed well in the sense of having a good triplexing function.The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.The experimental results showed that the crosstalk was less than -15 dB,and the 3 dB-bandwidth was 11.04 nm.The peak wavelength output from ports a,c,and b were 1455,1510 and 1300 nm,respectively,which deviated from our original expectations.The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.